Fan RenDistinguished Professor
We aim to develop a highly sensitive and low-cost heart attack sensor technology, which can be implemented in a wireless-capable, real-time and handheld sensor for personal and medical usages. Acute myocardial infraction (AMI) causes one of the highest mortality rates worldwide. The existing methods employed by first responders, hospitals and clinics are time consuming and require trained personnel to perform tests. The challenge is to develop a real-time, accurate, handheld and low cost heart attack sensor for both personal and medical applications. AlGaN/GaN high electron mobility transistor (HEMT) based wide-energy bandgap semiconductor sensors amplify tiny changes of the surface charges from 105 to 106 times larger (50-60 dB higher) than those results from simple conductive or resistive measurements for the conventional conductive or resistive based sensors.
WIDE ENERGY-BANDGAP DEVICES
b-phase of Gallium Oxide is a very promising monoclinic semiconductor with relevant applications for power electronics and also for solar blind photodetectors. β-Ga2O3 based devices are predicted to have a Baliga figure-of-merit at least 4 times higher than either SiC or GaN, as reflected in the higher breakdown field and lower on-state resistance. Several types of transistors, including MOSFETs and MESFETs, as well as power Schottky diodes and solar blind UV detectors have also been reported. Our group holds the records of highest forward current as well as highest reverse breakdown voltage. We are studying the effects of total dose proton, electron, gamma ray and neutron fluxes on Ga2O3, which has exceptionally high breakdown fields and great promise for high power, high temperature electronics.
Ceramic prostheses are important components of restorative dentistry because of their unrivaled aesthetics and biocompatibility. However, ceramic veneers are susceptible to chipping failures intraorally, compromising the integrity of the prostheses. The resulting roughened surfaces can lead to increased plaque accumulation and the replacement of these prostheses. The long-term goal of this research is to develop fracture-resistant and chemically stable (durable) dental ceramics for prostheses by applying protective coatings. The overall objective is to critically evaluate the corrosion resistance and the strength of these dental ceramic coatings as a function of a simulated environment with constant changes in pH and intermittent abrasion.
Ph.D., 1991, Brooklyn Polytechnic Institute of Technology
Awards & Distinctions
- University Term Professor, 2018-2021
- Fred & Bonnie Edie Professor, 2015
- Teacher and Scholar Award, College of Engineering, University of Florida, 2014
- University of Florida Foundation Term Professor, 2013
- Gordon E. Moore Medal for Outstanding Achievement in Solid State Science and Technology (ECS), 2013
- Fred and Bonnie Edie Professor
- Albert Nerken Award in American Vacuum Society
- Electronic and Photonic Division Award (ECS)
- Fellow, American Physical Society
- Fellow, Electrochemical Society
- Fellow, Materials Research Society
- Fellow, Society of Photographic Instrumentation Engineers
- Fellow, American Vacuum Society
- “Operation up to 500°C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors”, Patrick H. Carey, IV, Fan Ren, Albert G. Baca, Brianna A. Klein, Andrew A. Allerman, Andrew M. Armostrong, Erica A. Douglas, Robert J. Kaplar, Paul G. Kotula, and Stephen J. Pearton, J Electron Dev. Soc. 7, 444-453 (2019).
- “Valence and Conduction Band Offsets for InN and III-Nitride Ternary Alloys on (-201) Bulk beta-Ga2O3”, Chaker Fares, Marko J. Tadjer, Jeffrey Woodward, Neeraj Nepal, Michael A. Mastro, Charles R. Eddy Jr., Fan Ren, and Stephen J. Pearton, ECS J. Solid State Sci. & Technol., 8, Q3154-Q3158 (2019).
- “Reverse Breakdown in Large Area, Field-Plated, Vertical ß-Ga2O3 Rectifiers”, Jiancheng Yang, Chaker Fares, Randy Elhassani, Minghan Xian, Fan Ren, S. J. Pearton, Marko Tadjer, and Akito Kuramata, ECS J. Solid State Sci. & Technol., 8, Q3159-Q3164 (2019)).
- “Comprehensive analysis of laserscanner validity used for measurement of wear”, Shu-Min Hsu, Fan Ren, Nader Abdulhameed, Mijin Kim, Dan Neal, Josephine Esquivel-Upshaw, J Oral Rehabil. 1-8 (2019).
- “2D Material-Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification”, Geonyeop Lee, Stephen J. Pearton, Fan Ren, and Jihyun Kim, Adv. Electron. Mater., 5, 1800745-1-7 (2019).