Charles J. Hages » Faculty

Photo of Charles J. Hages

Charles Hages

Assistant Professor
Work Office: CHE 417 Lab: CHE 410 & 433 1006 Center Drive Gainesville FL 32611 Work Phone: (352) 294-7002 Website: Hages Lab

Research Summary

DEVELOPING NEXT-GENERATION SEMICONDUCTORS for energy research is the primary focus of our group. Fundamental device physics and unique processing routes are combined to design new materials and device architectures, with particular focus on developing high-performance, low-cost electronics from low-energy, high-throughput processing techniques and earth-abundant resources. Using holistic material research techniques – including material simulation, synthesis, device fabrication, and optoelectronic characterization – enhanced understanding and rapid feedback between processing parameters and fundamental device properties is achieved to accelerate the material development process.

NEW MATERIAL DISCOVERY in our lab starts with screening for desired material properties from first-principles theoretical calculations. Next, solution-based techniques are used to synthesize nanomaterial films and low-dimensional electronic materials. Subsequently, controlled recrystallization techniques can be applied to form thin-films. Lastly, state-of-the-art electronic devices are fabricated. The use of nanomaterials in this process allows for unique device architectures, novel control over material optoelectronic properties, as well as highly-tunable recrystallization routes. Furthermore, such solution-based techniques are well suited for high-throughput research and the fabrication of next-generation technology such as light-weight, low-cost flexible electronics.

ADVANCED OPTOELECTRONIC CHARACTERIZATION at all stages of the material development process is a key aspect of material development in our lab. Such characterization provides rapid feedback for the accurate screening of relevant optoelectronic properties and optimal synthesis parameters in early-stage materials. We specialize in the characterization of non-ideal semiconductors – common to such early-stage materials – as well as novel all-optical measurement techniques to extract relevant material and device properties at very early stages of development. Our work combines a unique blend of engineering, chemistry, materials science, and physics resulting in highly-collaborative research at the forefront of modern chemical engineering.


Post-doc, 2015-2018, Helmholtz-Zentrum Berlin, Dept. of Structure & Dynamics of Energy Materials
Ph.D., 2015, Purdue University, Chemical Engineering
B.S., 2010, University of California, Santa Barbara, Chemical Engineering


  • NSF CAREER Award (2020)
  • Faculty Fellowship to Israel (2019)

selected Publications

  • Hages, C. J., Redinger, A., Levcenko, S., Hempel, H., Koeper, M. J., Agrawal, R, Greiner, D., Kaufmann, C. A., Unold, T.(2017). Identifying the real minority carrier lifetime in nonideal semiconductors: a case study of kesterite materials. Advanced Energy Materials, 7(18), 1700167.
  • Hages, C. J., Koeper M. J., Miskin, C. K., Brew K. W., Agrawal, R. (2016). Controlled grain growth for high performance nanoparticle-based kesterite solar cells. Chemistry of Materials, 28(21), pp. 7709-7714
  • Hages, C. J., Koeper, M. J., Agrawal R. (2016). Optoelectronic and material properties of nanocrystal-based CZTSe absorbers with Ag-alloying. Solar Energy Materials and Solar Cells, 145(3), pp. 342-348
  • Hages, C. J., Carter, N. J., Agrawal, R. (2016). Generalized Quantum Efficiency Analysis for Non-ideal Solar Cells: Case of Cu2ZnSnSe4. Journal of Applied Physics, 119, 014505.