Patents

  1. “Dielectric Coatings for Fixed and Removable Oral Prosthetic Restorations”, Esquivel-Upshaw, Ren, Clark, US Patent No. 10,813,847 (2020).
  2. “Water-Insensitive Gas Sensor Using Polymer-Encapsulated Pt-AlGaN/GaN Diodes” Jang, Pearton and Ren, US Patent No. 10,269,989 (2019).
  3. “Self-Heating Semiconductor Transistors”, Ren, Pearton, US 10,504,811 (2019).
  4. “Thermal stable ammonia gas sensor using ZnO-functionalized AlGaN/GaN heterostructure transistor”, Jang, Ren, Pearton, US 10,488,364 (2019).
  5. “High electron mobility transistors with improved heat dissipation”, Ren, Pearton, Law, Hwang, US 10,312,358 (2019).
  6. “Wireless based marine pathogens detection system”, Ren, Pearton, Wang, Sheppard, US 9,429,573 (2018).
  7. “Sensors using high electron mobility transistors”, Ren Pearton, Lele, Wang, Kang, US 9,316,637 (2016).
  8. “High Electron Mobility Transistors Having Improved Reliability”, Ren, Pearton, Kim US 9,236,433 (2016).
  9. “Materials and methods for detecting toxins, pathogens and other biological materials”, Ren, Pearton, Lele US 9,366,654 (2016).
  10. “Chloride Detection”, Ren, Pearton, US 8,836,351 (2014).
  11. “Sensors using high electron mobility transistors”, Ren, Pearton, Lele, Wang Kang US 8,835,984 (2014).
  12. “Sensors using high electron mobility transistors”, Ren, Pearton, Lele, US 8,828,713 (2014).
  13. “System for hydrogen sensing”, Ren, Lin, Norton, Pearton, US 8,578,757 (2013).
  14. “Oxygen and Carbon Dioxide Sensing”, Ren, Pearton. US 8,222,041 (2012).
  15. “GaN-type enhancement MOSFET using heterostructure”, Abernathy, Irokawa, Pearton, Ren, US 6,914,273 (2005).
  16. “Air Isolated Crossovers”, Kossives, Tai, Ren, US 6,683,384(2004).
  17. “Method of Making An Article Comprising An Oxide Layer on A GaAs-Based Semiconductor Body”,
    Chen, Cho, Hong, Hobson, Kuo, Kwo, Murphy, Ren, US 6,271,0698(2001).
  18. “Method of Forming A T-Shape Gate”, Lothian, Ren, Weiner, US 5,981,319(1999).
  19. “Article Comprising An Oxide Layer on GaN”, Hong, Hobson, Lothian, Mannaerts, Ren, US 5,912,498(1999).
  20. “GaAs Based MOSFET, And Method of Making Same”, Cho, Hong, Hobson, Mannaerts, Ren, US 5,903,037(1999).
  21. “Method of making an article comprising an oxide layer on a GaAs-based semiconductor body”, Hong, Hobson, Lothian, Mannaerts, Ren, European 993055128(1999).
  22. “Method of making an article comprising an oxide layer on a GaAs-based semiconductor body”, Hong, Hobson, Lothian, Mannaerts, Ren, European 993055128(1999)
  23. “Improved Air Isolation Crossovers”, Kossives, Tai, Ren, European 98307916(1998).
  24. “Article Comprising An Oxide Layer on GaN and Method of Making the Article”, Hobson, Hong, Lothian, Mannaerts, Ren, European, 98307928(1998).
  25. “Manufacture of Field Effect Transistors”, Lothian, Ren, European 98307228(1998).
  26. “GaAs Based MOSFET,” Cho, Hong, Lothian, Mannaerts, Ren, European 98301154(1998).
  27. “Article Comprising A Gallium Oxide Layer on A GaAs-Based Semiconductor and Method of Making The Article”,
    Hong, Ren, US 5,821,171(1998).
  28. “Method of Depositing Thin Passivating Film on Micro-Miniature Semiconductor Device”, Lin, Lothian, and Ren, US 5,620,909(1997).
  29. “Method of Making A GaAs Based Laser Comprising A Facet Coating”, Chakrabarti, Hobson, Ren, and Schnoes, US 5,668,049(1997).
  30. “Method for Making In-Containing III/V Semiconductor Devices,” Hobson, Lopata, and Ren, US 5,527,425(1996).
  31. “Method for Making In-Containing III/V Semiconductor Devices,” Hobson, Lopata, and Ren, European 96305099: (1996).
  32. “Method for Selectively Growing Aluminum-Containing Layers,” Abernathy, Pearton, and Ren, US 5,4569,097(1995).
  33. “Method for Making Fine-line Semiconductor Devices,” Abernathy, Lothian, Pearton and Ren, European Patent 94301125 (1994).
  34. “Method for Forming Patterned W Layers,” Fullowan, Pearton and Ren, U.S. 5,176 792(1993) European Patent 92309607.
  35. “Method for Selectively Growing Ga-containing Layers,” Abernathy, Pearton, Ren and Wisk, U.S. Patent 5,227 006(1993).
  36. “Method for Selectively Growing Ga-containing Layers,” Abernathy, Pearton, Ren and Wisk, European Patent 92310488(1993).
  37. “Method for Selectively Growing Al-containing Layers,” Abernathy, Pearton, Ren and Wisk: U.S. Patent 5,459 097(1993).
  38. “Method for Selectively Growing Al-containing Layers,” Abernathy, Pearton, Ren and Wisk: European Patent 92310487 (1993).
  39. “Method of Makinf Semiconductor Devices,” Fullowan, Pearton and Ren, U.S. 5, 168 071(1992).
  40. “Fabrication of Al-containing Semiconductor Devices,” Abernathy, Hobson, Jordan, Pearton and Ren: European Patent 92301438 (1992).
  41. “GaAs MESFETs with Enhanced Schottky Barrier,” Emerson and Ren, US 5,106,771 (1992).
  42. “GaAs Device Fabrication Utilizing Metalorganic Molecular Beam Epitaxy,” Abernathy and Ren, US 5,171,704: (1992).
  43. “Method for Forming Patterned W Layers,” Fullowan, Pearton and Ren, European Patent 92309607(1992).
  44. “Method for Selectively Wet Etching Aluminum Gallium Arsenide,” Ren and Shah, US 4,949,540 (1991).