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Fan Ren, Ph.D.

Fan Ren

Distinguished Professor
352-392-4727

Areas of Interest

Wide Energy Bandgap Electronic Devices
Semiconductor Device Passivation

Awards

University Term Professor, 2018-2021
Fred & Bonnie Edie Professor, 2015
Teacher and Scholar Award, College of Engineering, University of Florida, 2014
University of Florida Foundation Term Professor, 2013
Gordon E. Moore Medal for Outstanding Achievement in Solid State Science and Technology (ECS), 2013
Fred and Bonnie Edie Professor
Albert Nerken Award in American Vacuum Society
Electronic and Photonic Division Award (ECS)
Fellow, American Physical Society
Fellow, Electrochemical Society
Fellow, Materials Research Society
Fellow, Society of Photographic Instrumentation Engineers
Fellow, American Vacuum Society

Education

Ph.D., 1991, Brooklyn Polytechnic Institute of Technology

Courses Taught

Selected Publications

  • “Operation up to 500°C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors”, Patrick H. Carey, IV, Fan Ren, Albert G. Baca, Brianna A. Klein, Andrew A. Allerman, Andrew M. Armostrong, Erica A. Douglas, Robert J. Kaplar, Paul G. Kotula, and Stephen J. Pearton, J Electron Dev. Soc. 7, 444-453 (2019).
  • “Valence and Conduction Band Offsets for InN and III-Nitride Ternary Alloys on (-201) Bulk beta-Ga2O3”, Chaker Fares, Marko J. Tadjer, Jeffrey Woodward, Neeraj Nepal, Michael A. Mastro, Charles R. Eddy Jr., Fan Ren, and Stephen J. Pearton, ECS J. Solid State Sci. & Technol., 8, Q3154-Q3158 (2019).
  • “Reverse Breakdown in Large Area, Field-Plated, Vertical ß-Ga2O3 Rectifiers”, Jiancheng Yang, Chaker Fares, Randy Elhassani, Minghan Xian, Fan Ren, S. J. Pearton, Marko Tadjer, and Akito Kuramata, ECS J. Solid State Sci. & Technol., 8, Q3159-Q3164 (2019)).
  • “Comprehensive analysis of laserscanner validity used for measurement of wear”, Shu-Min Hsu, Fan Ren, Nader Abdulhameed, Mijin Kim, Dan Neal, Josephine Esquivel-Upshaw, J Oral Rehabil. 1-8 (2019).
  • “2D Material-Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification”, Geonyeop Lee, Stephen J. Pearton, Fan Ren, and Jihyun Kim, Adv. Electron. Mater., 5, 1800745-1-7 (2019).
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