Publications
 
  1. "Effect of proton irradiation on AlGaN/GaN high electron mobility transistor off-state drain breakdown voltage;, Ya-Hsi Hwang, Shun Li, Yueh-Ling Hsieh, Fan Ren, Stephen J. Pearton, Erin Patrick, Mark E. Law, and David J. Smith, Appl. Phys. Lett., 104, 082106-3 (2014).
  2. "Study on the Effects of Proton Irradiation on the DC Characteristics of AlGaN/GaN HEMTs;, L.Liu, H.-H.Hwang, Y.Xi, F.Ren, V.Craciun, S.J.Pearton, G.Yang, H-Y. Kim and J.Kim, J. Vac. Sci. Technol. B. 32, 022202 (2014).
  3. "p-type doping of ZnO films and growth of tenary ZnMgO and ZnCdO: application to light emitting diodes and laser diodes;, S. J. Pearton and Fan Ren, Int.Mat. Rev. 59, 61 (2014).
  4. "Advances in ZnO-Based Materials for Light Emitting Diodes;, S.J. Pearton and F.Ren, Current Opinion in Chemical Engineering, 3C, 51 (2014).
  5. "Enhancement of AlGaN/GaN high electron mobility transistors off-state drain breakdown voltage via backside proton irradiation;, Shun Li, Ya-Hsi Hwang, Yueh-Ling Hsieh, Lei Lei, Fan Ren, Stephen J. Pearton, Erin Patrick, Mark E. Law, Camilo Velez Cuervo, and David. J. Smith, J. Vac. Sci. Technol. B 32, 021203-1-6 (2014).
  6. "Hydrogen sensing characteristics of semipolar (1122) GaN Schottky diodes;, Kwang Hyeon Baik, Hyonwoong Kim, Sung-Nam Lee, Eunju Lim, S. J. Pearton,F. Ren, and Soohwan Jang, Appl. Phys. Lett., 104, 072103 (2014).
  7. "Effect of 5 MeV proton radiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors;, Yuyin Xi, Yueh-Ling Hsieh, Ya-Hsi Hwang, Shun Li, Fan Ren, Stephen J. Pearton, Erin Patrick, Mark E. Law, Gwangseok Yang, Hong-Yeol Kim, Jihyun Kim, Albert G. Baca, Andrew A. Allerman, and Carlos A. Sanchez, J. Vac. Sci. Technol. B 32, 012201-1-7 (2014).
  8. "Modeling Proton Irradiation in AlGaN/GaN HEMTs: Understanding the Increase of Critical Voltage;, E. Patrick, M.E..Law, L. Liu, C.V.Velez Cuervo, Y. Xi, F.Ren and. S.J. Pearton, IEEE Trans. Nucl. Sci. 60 4103(2013).
  9. "Sb-based Semiconductors for Low Power Electronics;, N.T. Yeh, P.C. Chiu, J.I. Chyi, F. Ren and S. J. Pearton, J. Mater. Chem. C 1, 4616 (2013).
  10. "GaN metal–insulator–semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation;, Y.-H.Hwang, Lu Liu, C.Velez, F. Ren, B. P. Gila, D. Hays, S. J. Pearton, E. Lambers, I. I. avchenko, C.-F. Lo, and J. W. Johnson, J. Vac. Sci. Technol. B 31, 052201 (2013).
  11. "Viscosity-dependent drain current noise of AlGaN/GaN high electron mobility transistor in polar liquids“,mobility transistor in polar liquids;, J. Y. Fang, G. Y. Lee, J. I. Chyi, C. P. Hsu, Y. W. Kang, K. C. Fang, W. L. Kao, D. J. Yao, C. H. Hsu, Y. F. Huang, C. C. Chen, S. S. Li, J. A. Yeh, F. Ren and Y. L. Wang, J. Appl. Phys. 114, 204503 (2013).
  12. "Electrical characterization of 60Co gamma radiation-exposed InAlN/GaN high electron mobility transistors;, Hong-Yeol Kim, Jihyun Kima, Lu Liu, Chien-Fong Lo, Fan Ren and Stephen J. Pearton, J.Vac. Sci.Technol. B 31, 051210-1-4 (2013).
  13. "Field-induced defect morphology in Ni-gate AlGaN/GaN high electron mobility transistors;, M. R. Holzworth, N. G. Rudawski, P. G. Whiting, S. J. Pearton, K. S. Jones, L. Lu, T. S. Kang, F. Ren, E. Patrick and M. E. Law, Appl. Phys. Lett., 103, 023503 (2013).
  14. "GaN-based ultraviolet light-emitting diodes with AuCl3-doped graphene electrodes;, Byung-Jae Kim, Gwangseok Yang, Hong-Yeol Kim, Kwang Hyeon Baik, Michael A. Mastro, Jennifer K. Hite, Charles R. Eddy, Jr., Fan Ren, Stephen J. Pearton, and Jihyun Kim, Optics Express, 21, 29025-29030 (2013).
  15. "Human immunodeficiency virus drug development assisted with AlGaN/GaN high electron mobility transistors and binding-site models;, Yen-Wen Kang, Geng-Yen Lee, Jen-Inn Chyi, Chen-Pin Hsu, You-Ren Hsu, Chia-Hsien Hsu, Yu-Fen Huang, Yuh-Chang Sun, Chih-Chen Chen, Sheng Chun Hung, Fan Ren, J. Andrew Yeh and Yu-Lin Wang, Appl. Phys. Lett., 102, 173704 (2013).
  16. "Review of radiation damage in GaN-based materials and devices;, Stephen J. Pearton, Richard Deist, Fan Ren, Lu Liu, Alexander Y. Polyakov and Jihyun Kim, J.Vac. Sci.Technol. A 31, 050801-1-16 (2013).
  17. "Characteristics of carbon monoxide sensors made by polar and nonpolar zinc oxide nanowires gated AlGaN/GaN high electron mobility transistor;, S. C. Hung, W. Y. Woon, S. M. Lan, F. Ren, and S. J. Pearton, Appl. Phys. Lett. 103, 083506 (2013).
  18. "A facile method for highly uniform GaN-based nanorod light-emitting diodes with InGaN/GaN multi-quantum-wells;, Hyunik Park, Kwang Hyeon Baik, Jihyun Kim, Fan Ren, and Stephen J. Pearton, Optics Express, 21, 12909 (2013).
  19. "Study of hydrogen detection response time with Pt-gated diodes fabricated on AlGaN/GaN heterostructure;, Yuyin Xi, Lu Liu, Ya-Hsi Hwang, Oluwadamilola Phillips, Fan Ren, Stephen J. Pearton, Jihyun Kim, Chien-Hsing Hsu, Chien-Fong Lo5, and Jerry Wayne Johnson, J.Vac. Sci.Technol. B 31, 032202-1-5 (2013).
  20. "Methane detection using Pt-gated AlGaN/GaN high electron mobility transistor based Schottky diodes;, Yuyin Xi, Lu Liu, Fan Ren, Stephen J. Pearton, Jihyun Kim, Amir Dabiran, and Peter P. Chow, J.Vac. Sci.Technol. B 31, 032203-1-5 (2013).
  21. "Reliability studies of AlGaN/GaN high electron mobility transistors;, D J Cheney, E A Douglas, L Liu, C F Lo, Y Y Xi, B P Gila, F Ren, David Horton, M E Law, David J Smith and S J Pearton, Semicond. Sci. Technol. 28, 074019 (2013).
  22. "Impact of proton irradiation on dc performance of AlGaN/GaN high electron mobility transistors”, Lu Liu, Camilo Velez Cuervo, Yuyin Xi, Fan Ren, Stephen J. Pearton, Hong-Yeol Kim, Jihyun Kim, and Ivan I. Kravchenko, J.Vac. Sci.Technol. B 31, 042202-1-6 (2013;, Lu Liu, Camilo Velez Cuervo, Yuyin Xi, Fan Ren, Stephen J. Pearton, Hong-Yeol Kim, Jihyun Kim, and Ivan I. Kravchenko, J.Vac. Sci.Technol. B 31, 042202-1-6 (2013).
  23. "Effect of electron irradiation on AlGaN/GaN and InAlN/GaN heterojunctions;, Ya-Shi Hwang, Lu Liu, Fan Ren, Alexander Y. Polyakov, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, N. G. Kolin, V. M. Boiko, S. S. Vereyovkin, V. S. Ermakov, Chien-Fong Lo, Oleg Laboutin, Y. Cao, J. W. Johnson, N. I. Kargin, R. V. Ryzhuk, Stephen J. Pearton, J.Vac. Sci.Technol. B 31, 022206-1-6 (2013).
  24. "Effect of Temperature on CO detection Sensitivity in Air Ambient by Using ZnO Nanorod-Gated AlGaN/GaN High Electron Mobility Transistors;, C. F. Lo, Yuyin Xi, L. Liu, F. Ren, S. J. Pearton, S. Doré, Chien-Hsing Hsu, A. Dabiran and P. P. Chow, Sensors & Actuators B 176, 708– 712(2013).
  25. "AlGaN/GaN high electron mobility transistors for protein–peptide binding affinity study;, Chih-Cheng Huang, Geng-Yen Lee, Jen-Inn Chyi, Hui-Teng Cheng, Chen-Pin Hsu, You-Ren Hsu, Chia-Hsien Hsu, Yu-Fen Huang, Yuh-ChangSun, Chih-Chen Chen a, Sheng-Shian Li, J.Andrew Yeh, Da-Jeng Yao, Fan Ren, Yu-Lin Wang, Biosensors and Bioelectronics, 41, 717–722 (2013).
  26. "Light-actuated water droplet motions on ZnO nanorods;, Chien-Wei Liu, Chen-Pin Hsu, J. Andrew Yeh, Yuh-Chang Sun, Yu-Fen Huang, Byung Hwan Chu, Fan Ren, Yu-Lin Wang, Microsyst Technol, 19, 245–251 (2013).
  27. "Wide Bandgap Semiconductor One-Dimensional Nanostructures for Applications in Nanoelectronics and Nanosensors;, S.J. Pearton and F. Ren, Nanomater. Nanotechnol. 3,1 (2013).
  28. "Effects of 2 MeV Ge Irradiation on AlGaN/GaN HEMTs;, E. Douglas, E. Bielejec, P. Frenzer, S.J. Pearton, C.F. Lo, L. Liu, T. Kang and F. Ren, J.Vac. Sci.Technol. B 31, 021205 (2013).
  29. "Flexible graphene-based chemical sensors on paper substrates;, G. Yang, C. Lee, J. Kim, F. Ren and S. J. Pearton, Phys. Chem. Chem. Phys., 15, 1798 (2013).
  30. "Radiation Effects in GaN Materials and Devices;, A.Y.Polyakov, S.J.Pearton, P. Frenzer, F. Ren, L. Liu and J.Kim, J. Mater. Chem. C, 1, 877 (2013).
  31. "Deep Centers and Persistent Photocapacitance in AlGaN/GaN High Electron Mobility Transistor Structures Grown on Si Substrates;, A.Y.Polyakov, N Smirnov, A Govorkov, E. Kozhukhova, F. Ren, L. Lui, J. W. Johnson, N. Kargin, R Ryzhuk and S.J.Pearton, J.Vac. Sci. Technol. B 31, 011211-5 (2013).
  32. "Effect of Buffer Structures on AlGaN/GaN High Electron Mobility Transistor Reliability;, L. Liu, C. F. Lo, Y. Xi, F .Ren, S. J. Pearton, O. Laboutin, Y. Cao , J. W. Johnson, I. Kravchenko, J.Vac. Sci. Technol. B 31, 011805-6 (2013).
  33. "Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors;, Lu Liu, Chien-Fong Lo, Yuyin Xi, Yuxi Wang, Fan Ren, Stephen J. Pearton, Hong-Yeol Kim, Jihyun Kim, Robert C. Fitch, Dennis E. Walker, Jr., Kelson D. Chabak, James K. Gillespie, Stephen E. Tetlak, Glen D. Via, Antonio Crespo and Ivan I. Kravchenko, J. Vac. Sci. Technol. B31, 022201-7 (2013).
  34. "Gamma Irradiation Impact on Electronic Carrier Transport in AlGaN/GaNHigh Electron Mobility Transistors;, C. Schwarz, A. Yadav, M. Shatkhin, E. Flitsiyan, L. Chernyak, V. Kasiyan, L. Liu, Y. Y. Xi, F. Ren, S. J. Pearton, C. F. Lo and J. W. Johnson, and E. Danilova, Appl. Phys. Lett. 102, 062102-3 (2013).
  35. "Oxygen Sensing Properties of SnO2-Gated AlGaN/GaN High Electron Mobility Transistors at Low Temperatures;, C.J.Chang, S.T.Hung, F.Ren, S.J.Pearton, C.F.Lo, C.C.Chen and I.I.Kravchenko, J. Vac. Sci.Technol. B 30, 041214 (2012).
  36. "Admittance Spectra Studies of Quantum Well States in AlGaN/AlN/GaN Heterojunctions;, A.Y.Polyakov, N.Smirnov, A.Govorkov, E.A.Kozhukova, S.J. Pearton, F.Ren, S.Yu, A. Karpov, K.Shcherbachev and W.Lim, ECS J.Solid State and Technol.1, P152 (2012).
  37. "A Facile Method for Flexible GaN-Based Light-Emitting Diodes;, Y.Jung, X.Wang, S.H.Kim, F.Ren, J.Kim and S.J.Pearton, Phys. Stat. Solidi RRL, 6, 243 (2012).
  38. "Flexible Electronics Based on IGZO Transparent Thin Film Transistors;, S.J. Pearton, W. Lim, E. Douglas, H. Cho and F. Ren, Key Engineering Materials 521, 141(2012).
  39. "Under-gate defect formation in Ni-gate AlGaN/GaN high electron mobility transistors;, P.G. Whiting, N.G. Rudawski, M.R. Holzworth, S.J. Pearton, K.S. Jones, L. Liu, T.S. Kang, F. Ren, Microelectronics Reliability, 52, 2542–2546 (2012).
  40. "Trap detection in electrically stressed AlGaN/GaN HEMTs using optical pumping;, D.J. Cheney, R. Deist, B. Gila, J. Navales, F. Ren, S. J. Pearton, Microelectronics Reliability, 12, 2884–2888 (2012).
  41. "Degradation Mechanisms for GaN and GaAs High Speed Transistors;, David J. Cheney, Erica A. Douglas, Lu Liu, Chien-Fong Lo, Brent P. Gila, Fan Ren and Stephen J. Pearton, Materials, 5, 2498-2520 (2012).
  42. "Comparison of neutron irradiation effects in AlGaN/AlN/GaN, AlGaN/GaN, and InAlN/GaN heterojunctions;, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, Stephen J. Pearton, Fan Ren, Lu Liu, J. W. Johnson Wantae Lim, N. G. Kolin, S. S. Veryovkin, and V. S. Ermakov, J. Vac. Sci. Technol. B30, 061207-1 (2012).
  43. "Transmission electron microscopy characterization of electrically stressed AlGaN/GaN high electron mobility transistor devices;, Michael R. Johnson, David A. Cullen, Lu Liu, Tsung Sheng Kang, Fan Ren, Chih-Yang Chang, Stephen J. Pearton, Soohwan Jang, J. W. Johnson and David J. Smith, J. Vac. Sci. Technol. B30, 062204 (2012).
  44. "Improved Organic Light Emitting Diodes Using Cryogenic LiF/Al Deposition;, Byung-hwan Chu, Byung Doo Chin, Kwang Hyeon Baik, Stephen J. Pearton, Fan Ren, and Soohwan Jang, Japanese J. Appl. Phys. 51, 09MH04(2012).
  45. "Proton Irradiation Energy Dependence of DC and RF Characteristics on InAlN/GaN High Electron Mobility Transistors;, C. F. Lo, L. Liu, F. Ren, S. J. Pearton, B. P. Gila, H.-Y. Kim, J. Kim, O. Laboutin, Yu Cao, J. W. Johnson and I. I. Kravchenko, J. Vac. Sci. Technol. B30, 041206-1-6 (2012).
  46. "UV ozone treatment for improving contact resistance on grapheme;, Chung Wei Chen, Fan Ren, Gou-Chung Chi, Sheng-Chun Hung, Y. P. Huang, Jihyun Kim, Ivan I. Kravchenko, and Stephen J. Pearton, J. Vac. Sci. Technol. B 30, 060604-1-3 (2012).
  47. "GaN-based light-emitting diodes by laser lift-off with micro- and nano-sized reflectors;, Younghun Jung, Sung Hyun Kim, Jihyun Kim, Xiaotie Wang, Fan Ren, Kyoung Jin Choi, Stephen J. Pearton, J. Vac. Sci. Technol. A 30, 050605-1-4 (2012).
  48. "Metastable centers in AlGaN/AlN/GaN heterostructures;, Alexander Y. Polyakov, Nick B. Smirnov, A. V. Govorkov, and E. A. Kozhukhova, Stephen J. Pearton, Fan Ren, S. Yu. Karpov, K. D. Shcherbachev, N. G. Kolin, and Wantae Lim, J. Vac. Sci. Technol. B 30, 041209-1-6 (2012).
  49. "Effects of semiconductor processing chemicals on conductivity of grapheme;, Chung Wei Chen, F. Ren, Gou-Chung Chi, S. C. Hung, Y. P. Huang, Jihyun Kim, Ivan Kravchenko, Stephen J. Pearton J. Vac. Sci. Technol. B 30, 040602-1 -5(2012).
  50. "Investigation of emitter size effect in InP/InGaAsSb/InGaAs double heterojunction bipolar transistors;, S. Y. Wang, C. A. Chang, C. M. Chang, S. H. Chen, F. Ren, S. J. Pearton, and J.-I. Chyi, Appl. Phys. Lett. 101, 073507-1-4 (2012).
  51. "SnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications;, Shao-Tsu Hung, Chi-Jung Chang, Chien-Hsing Hsu, Byung Hwan Chu, Chien Fong Lo, Chin-Ching Hsu, Stephen J. Pearton, Monta Raymond Holzworth, Patrick Guzek Whiting, Nicholas Guy Rudawski, Kevin S. Jones, Amir Dabiran, Peter Chow, Fan Ren, International J. Hydrogen Energy 37, 13783-13766 (2012).
  52. "UVozone treatment for improving contact resistance on grapheme;, Chung Wei Chen, Fan Ren, Gou-Chung Chi, Sheng-Chun Hung, Y. P. Huang, Jihyun Kim, Ivan I. Kravchenko, and Stephen J. Pearton, J. Vac. Sci. Technol. B 30, 060604-1-3 (2012).
  53. "Chemical Etch Characteristics of N-Face and Ga-Face GaN by Phosphoric Acid and Potassium Hydroxide Solutions;, Younghun Jung, Jaehui Ahn, Kwang Hyeon Baik, Donghwan Kim, Stephen J. Pearton, Fan Ren, and Jihyun Kim, J. Electrochem. Soc. 159, H117-H120 (2012).
  54. "Simulation and experimental study of ArF 193?nm laser lift-off AlGaN/GaN high electron mobility transistors;, T. S. Kang, X. T. Wang, C. F. Lo, F. Ren, S. J. Pearton, O. Laboutin, Yu Cao, J. W. Johnson, and Jihyun Kim, J. Vac. Sci. Technol. B 30, 011203 (2012).
  55. "Gallium Nitride-Based Gas, Chemical and Biomedical Sensors;, J. Pearton and Fan Ren, IEEE Instrumentation & Measurement Magazine, 15, 16-21(2012).
  56. "Carbon monoxide detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors in different temperature environments;, Chien-Fong Lo, Lu Liu, Byung-Hwan Chu, Fan Ren, Stephen J. Pearton, Sylvain Doré, Chien-Hsing Hsu4, Jihyun Kim, Amir M. Dabiran, and Peter P. Chow J. Vac. Sci. Technol. B 30, 010606 (2012).
  57. "Effects of P implantation and post-implantation annealing on defect formation in ZnO;, X. J. Wang, W. M. Chen, F. Ren, S. Pearton, and I. A. Buyanova, J. Appl. Phys. 111, 043520 (2012).
  58. "Degradation of dc characteristics of InAlN/GaN high electron mobility transistors by 5 MeV proton irradiation;, Chien-Fong Lo, L. Liu, T. S. Kang, Fan Ren, C. Schwarz, E. Flitsiyan, L. Chernyak, Hong-Yeol Kim, Jihyun Kim, Sang Pil Yun, O. Laboutin, Y. Cao5, J. W. Johnson, and S. J. Pearton, J. Vac. Sci. Technol. B 30, 031202 (2012).
  59. "GaN-based light-emitting diodes on origami substrates;, Younghun Jung, Xiaotie Wang, Jiwan Kim, Sung Hyun Kim, Fan Ren, Stephen J. Pearton, and Jihyun Kim, Appl. Phys. Lett. 100, 231113 (2012).
  60. "Buried graphene electrodes on GaN-based ultra-violet light-emitting diodes;, Byung-Jae Kim, Chongmin Lee, Michael A. Mastro, Jennifer K. Hite, Charles R. Eddy, Jr., Fan Ren, Stephen J. Pearton, and Jihyun Kim, Appl. Phys. Lett. 101, 031108 (2012).
  61. "SnO2-gated AlGaN/GaN high electron mobility transistors based oxygen sensors;, Shao-Tsu Hung, Chi-Jung, Chin Ching Chen, Chien Fong Lo, Fan Ren, Stephen J. Pearton and Ivan I. Kravchenko, J. Vac. Sci. Technol. B 30, 041214-1-5(2012).
  62. "Graphene as a diffusion barrier for Al and Ni/Au contacts on silicon;, Hong-Yeol Kim, Chongmin Lee, and Jihyun Kim, Fan Ren, S. J. Pearton, J. Vac. Sci. Technol. B 30, 030602-1-4(2012).
  63. "Low-temperature, site selective graphitization of SiC via ion implantation and pulsed laser annealing;, Maxime G. Lemaitre, Sefaattin Tongay, Xiaotie Wang, Dinesh K. Venkatachalam, Joel Fridmann, Brent P. Gila, Arthur F. Hebard, Fan Ren, Robert G. Elliman, and Bill R. Appleton, Appl. Phys. Lett. 100, 193105-4 (2012).
  64. "Highly sensitive AlGaN/GaN diode-based hydrogen sensors using platinum nanonetworks:, H. Kim, W. Lim, J.-H. Lee, S.J. Pearton, F. Ren, S. Jang, Sensors & Actuators B 164, 64–68(2012).
  65. "Sensors using AlGaN/GaN based high electron mobility transistor for environmental and bio-applications;, F. Ren, and S. J. Pearton, P hys. Status Solidi C9, 393–398 (2012).
  66. "Effects of proton irradiation energies on degradation of AlGaN/GaN high electron mobility transistors;, H.-Y. Kim, J. Kim, L. Liu, C.-. Lo, F, Ren, S. J. Pearton, J. Vac. Sci, Technol.,B30, 012202-1-4(2012).
  67. "Proton-irradiated InAlN/GaN high electron mobility transistors at 5, 10, and 15 MeV energies;, H.-Y. Kim, C. F. Lo, L. Liu, F. Ren, J. Kim, and S. J. Pearton, Appl. Phys. Lett., 100, 012101-1-3(2012).
  68. "Band offsets in HfO2/InGaZnO4 heterojunctions;, Hyun Cho, E. A. Douglas, B. P. Gila, V. Craciun, E. S. Lambers, Fan Ren, and S. J. Pearton, Appl. Phys. Lett., 100, 012105-1-4(2012).
  69. "Effect of Buffer Layer Structure on Electrical and Structural Properties of AlGaN/GaN High Electron Mobility Transistors;, C.F. Lo, L. Liu, T. S. Kang, F. Ren, O. Laboutin, Yu Cao, Wayne J. Johnson, A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, I.A. Belogorokhov, A.I. Belogorokhov, S.J. Pearton, J. Vac. Sci. Technol. B30, 011205-1-7(2012).
  70. "Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors;, E.A. Douglas, C.Y. Chang, B.P. Gila, M.R. Holzworth, K.S. Jones, L. Liu, Jinhyung Kim, Soohwan Jang, G.D. Via, F. Ren, S.J. Pearton, Microeletronics Reliability, 52, 23-28(2012).
  71. "Oxygen sensors made by monolayer graphene under room temperature;, C. W. Chen, S. C. Hung, M. D. Yang, C. W. Yeh, C. H. Wu, G. C. Chi, F. Ren, and S. J. Pearton, Appl. Phys. Lett., 99, 243502-1-3(2011).
  72. "Investigating the Effect of Off-State Stress on Trap Densities in AlGaN/GaN High Electron Mobility Transistors;, L. Liu, F. Ren, S. J. Pearton, R. C. Fitch, D. E. Walker Jr. , K. D. Chabak, J. K. Gillespie, M. Kossler, M. Trejo, David Via, and A. Crespo, J. Vac. Sci. Technol. B29, 060603-1-5(2011).
  73. "ZnO, GaN, and InN Functionalized Nanowires for Sensing and Photonics Applications;, S. J. Pearton, C. Y. Chang, B. H. Chu, Chien-Fong Lo, Fan Ren, Wenchao Chen, and Jing Guo, IEEE J. Selected Topics in Quantum Electronics, 17, 1092-1101(2011).
  74. "Modulating malignant epithelial tumor cell adhesion, migration, and mechanics with nanorod surfaces. Biomedical Microdevices;, J. Lee, B. H. Chu, S. Sen, A. Gupte, T. J. Chancellor, C.-Y. Chang, F. Ren, S. Kumar, and T. P. Lele, Biomed Microdev. 13, 89-95(2011).
  75. "Simulation and Experimental Study of ArF 193 nm Laser Lift-Off AlGaN/GaN High Electron Mobility Transistors;, T. S. Kang, X. T. Wang, C. F. Lo, F. Ren, S. J. Pearton, O. Laboutin, Yu Cao, J. W. Johnson, and Jihyun Kim, J. Vac. Sci. Technol. B29, 041202-1-5(2011).
  76. "Effects of silicon nitride passivation on isolation-blocking voltage in AlGaN/GaN high electron mobility transistors", C.F. Lo, T.S. L. F. Ren, S.J. Pearton, L. Kim, S. Jang, O. Y. Cao, J. W. Johnson, J. Vac. Sci. Technol. B29, 031211-1-5 (2011).
  77. "Fabrication of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors", C.F. Lo, F. Ren, F, C.Y. Chang, S.J. Pearton, S.H. Chen, C.M. Chang, S.Y. Wang, J.I. Chyi, I.I. Kravchenko, J. Vac. Sci. Technol. B29, 031025-1-5 (2011).
  78. "Measurement of SiO2/InZnGaO4 heterojunction band offsets by x-ray photoelectron spectroscopy", E.A. Douglas, A. Scheurmann, R. P. Davies, B. P. Gila, H. V. E.S. Lambers, S.J. Pearton, F. Ren, Appl. Phys. Lett., 98, 242110-1-3(2011).
  79. "Effect of temperature on CO detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors", C. F. Lo, B. H. Chu, S. J. Pearton, A. P.P. S. Dore, S. C. Hung, C. W. Chen, F. Ren, Appl. Phys. Lett., 99, 142107-1-3(2011).
  80. "Hydrogen detection using platinum coated graphene grown on SiC", B, H. Chu, C. F. Lo, J. Nicolosi, C. Y. Chang, V. Chen, W. Strupinski, W S. J. Pearton, F. Ren, Sensors & Actuators B157, 500-503(2011).
  81. "Large-area suspended graphene on GaN nanopillarss", Chongmin Lee, Byung-Jae Kim, Fan Ren, S. J. Pearton, and Jihyun Kim, J. Vac. Sci. & Technol. B29, 060601-1-5(2011).
  82. "Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistorss", C. F. Lo, L. Liu, F. Ren,H.-Y. Kim and J. Kim, S. J. Pearton, O. Laboutin, Yu Cao, J. W. Johnson, and I. I. Kravchenko, J. Vac. Sci. & Technol. B29, 061201-1-5(2011).
  83. "Effect of Drain Bias on Degradation of AlGaN/GaN High Electron Mobility Transistors under X-Band Operations", E. A. Douglas, S. J. Pearton, B. Poling, G. D. Via, L. Liu,d and F. Ren, Electrochem. & Solid-State Lett. 14, H464-H466 (2011)..
  84. "Al2O3/InGaZnO4 Heterojunction Band Offsets by X-Ray Photoelectron Spectroscopy", Hyun Cho, E. A. Douglas, A. Scheurmann, B. P. Gila, V. Craciun, E. S. Lambers, S. J. Pearton, and F. Ren, Electrochem. & Solid-State Lett. 14, H431-H433 (2011).
  85. "Detection of vitellogenin, an endocrine disrupter biomarker, using AlGaN/GaN high electron mobility transistorss", Byung Hwan Chu, C. Y. Chang, Kevin Kroll, Nancy Denslow, Yu-Lin Wang, S. J. Pearton, Jenshan Lin, A. M. Dabiran, A. M. Wowchak, B. Cui, P. P. Chow, J. W. Johnson, P. Rajagopal, J. C. Roberts, E. L. Piner, K. J. Linthicum, and Fan Ren, Phys. Status Solidis C8, 2486-2488(2011).
  86. "Nanoengineering of Semiconductor Nanowires-Synthesis, Processing and Sensing Applications", S. J. Pearton, B. P. Gila1, Bill Appleton, David Hays, F. Ren,Joel Fridmann, and Paul Mazarov, J. Nano-Eng. & Nano-Manufact., 1, 1-15(2011).
  87. "AlGaN/GaN High Electron Mobility Transistor Degradation under on- and off-state Stress", E.A. Douglas, C.Y. Chang, D.J. Cheney, B.P. Gila, C.F. Lo, Liu Lu, R. Holzworth, P. Whiting, K. Jones, G.D. Via, Jinhyung Kim, Soohwan Jang, Fan Ren, and S.J. Pearton, Microelectronics Reliability 51, 207–211(2011).
  88. "Deep Traps and Thermal Measurements on AlGaN/GaN on Si Transistors", C. F. Lo, Fan Ren, S.J. Pearton, A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, I.A. Belogorokhov, A.I. Belogorokhov, and J.W. Johnson, J. Vac. Sci. & Technol. B29, 042201-1-5(2011).
  89. "Thermal Simulation of Laser Lift-off AlGaN/GaN High Electron Mobility Transistors Mounted on AlN Substrates", T. S. Kang, C. F. Lo, L. Liu, R. Finch, F. Ren,X. T. Wang, E. Douglas, S. J. Pearton, S. T. Hung and C.-J. Chang, J. Vac. Sci. & Technol. B29, 041202-1-5(2011).
  90. "Comparison of dc performance of Pt/Ti/Au- and Ni/Au-Gated AlGaN/GaN High Electron Mobility Transistors", Lu Liu, Chien-Fong Lo, Tsung-Sheng Kang, S. J. Pearton, I. I. Kravchenko, O. Laboutin, Yu Cao, Wayne J. Johnson, and Fan Ren, J. Vac. Sci. & Technol. B29, 042202-1-4(2011).
  91. "Effect of Source Field Plate on the Characteristics of Off-State, Step-Stressed AlGaN/GaN High Electron Mobility Transistors", L. Liu, T. S. Kang, D.A. Cullen, Lin Zhou, J. Kim, C.-Y. Chang, E. A. Douglas, S. Jang3, D. J. Smith, S. J. Pearton, W. J. Johnson, and F. Ren, J. Vac. Sci. & Technol. B29, 032204-1-5(2011).
  92. "EImprovement of off-state stress critical voltage by using Pt-gated AlGaN/GaN high electron mobility transistors", Chien-Fong Lo, Lu Liu, Tsung-Sheng Kang, Ryan Davies, Brent P. Gila, S. J. Pearton, I. I. Kravchenko, O. Laboutin, Yu Cao, Wayne J. Johnson, and Fan Ren, Electrochemical & Solid-State Lett., 14, H264-267 (2011).
  93. "Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor", M. R. Holzworth, N. G. Rudawski, S. J. Pearton, K. S. Jones, L. Lu, T. S. Kang, F. Ren, and J. W. Johnson, Appl. Phys. Lett. 98, 122103-1-122103-3 (2011).
  94. "Electric Field Driven Degradation in Off State, Step stressed AlGaN/GaN High Electron Mobility Transistors", Chih-Yang Chang, E.A. Douglas, Jinhyung Kim, Liu Lu, Chien-Fong Lo, Byung Hwan Chu, D.J. Cheney, B.P.Gila, F.Ren, G.D.Via, David A. Cullen, Lin Zhou, David. J. Smith, Soohwan.Jang and S.J.Pearton, IEEE Trans. Electron & Mat. Reliab., 11, 187-193(2011).
  95. "Finite-Element Simulations of the Effect of Device Design on Channel Temperature for AlGaN/GaN High Electron Mobility Transistors", E. A. Douglas, F.Ren and S.J.Pearton, J. Vac. Sci. Technol. B29, pp.020603-1-020603-4 (2011).
  96. "Annealing Temperature Dependence of Ohmic Contact Resistance and Morphology on InAlN/GaN High Electron Mobility Transistor Structures", C.-F. Lo, L. Liu, C.Y. Chang, F. Ren, V. Craciun and S.J. Pearton, Y.W. Heo, O. Laboutin and J.W. Johnson, J. Vac. Sci. Technol. B29, pp.0211002-1-0211022-5(2011).
  97. "Circular and rectangular via holes formed in SiC via using ArF based UV excimer laser", L. Liu, C.Y. Chang, Wenhsing Wu, S.J. Pearton, F. Ren, Applied Surface Science 257, pp. 2303–2307 (2011).
  98. "Contributions of surface topography and cytotoxicity to the macrophage response to zinc oxide nanorods;, T.D. Zaveri, N.V. Dolgova, B.H. Chu, J. Lee, J. Wong, T.P. Lele, F. Ren F, B.G. Keselowsky, Biomaterials, 31, 2999-3007(2010).
  99. "Ti/Au Ohmic contacts to indium zinc oxide thin films on paper substrates", R. Khanna, E. A. Douglas, D. P. Norton, S. J. Pearton, F. Ren, F.J. Vac. Sci. & Technol. B 28, L43-L46 (2010).
  100. "Hydrogen Sensing Characteristics of Non-Polar a-Plane GaN Schottky Diodes", Y. L. Wang, F. Ren, W.Lim, S.J.Pearton, K.W.Baik, S.M.Hwang, Y.G.Seo and S.Jang, Current Appl. Phys. 10, 1029 (2010).
  101. "TiAlNiAu contacts for ultrathin AlN/GaN high electron mobility transistor structures", Lin Zhou, C. Y. Chang, S. J. Pearton, F. Ren, A. Dabiran, and D. J. Smith, J. Appl.Phys. 108, 084513 (2010).
  102. "Reverse gate bias-induced degradation of AlGaN/GaN high electron mobility transistors", C.-Y. Chang, T. Anderson, J. Hite, Liu Lu, C.-F. Lo, B.-H. Chu, D. J. Cheney, E. A. Douglas, B. P. Gila, F. Ren, G. D. Via, P. Whiting, R. Holzworth, K. S. Jones, S. Jang and S.J.Pearton, Vac. Sci. Technol. B 28, 1044 (2010).
  103. "Proton irradiation effects on AlN/GaN high electron mobility transistors", C. F. Lo, C. Y. Chang, B. H. Chu, H.-Y. Kim, J. Kim, D. A. Cullen, L. Zhou, D. J. Smith, S. J. Pearton, A. Dabiran, B. Cui, P. P. Chow, S. Jang, and F. Ren, J. Vac. Sci. Technol. B 28, L47 (2010).
  104. "Ti/Au Ohmic contacts to indium zinc oxide thin films on paper substrates", R. Khanna, E. A. Douglas, D. P. Norton, S. J. Pearton, and F. Ren, J.Vac.Sci.Technol. B28, L43 (2010).
  105. "Ohmic contact properties of non-polar a-plane GaN films on r-plane sapphire substrates", Kwang Hyeon Baik, Yong Gon Seo, Jaebum Kim1, Sung-Min Hwang, Wantae Lim, C Y Chang, S J Pearton, F Ren and Soohwan Jang, J. Phys. D: Appl. Phys. 43, 295102 (2010).
  106. "Normally on/off AlN/GaN high electron mobility transistors", C. Y. Chang, C. F. Lo, F. Ren,, S. J. Pearton, I. I. Kravchenko, A. M. Dabiran, B. Cui, and P. P. Chow, Phys. Status Solidi C 7, pp.2415–2418(2010).
  107. "Effect of Humidity on Hydrogen Sensitivity of Pt-Gated AlGaN/GaN High Electron Mobility Transistor Based Sensors", C. F. Lo , C.Y. Chang, B. H. Chu, S. J. Pearton, A. Dabiran, P. P. Chow, and F. Ren, Appl. Phys. Lett. 96, 232106 (2010).
  108. "Dip Pen Nanolithography of Conductive Silver Traces", Sheng-Chun Hung, Omkar A. Nafday, Jason R. Haaheim, Fan Ren, G. C. Chi, Stephen J. Pearton, J. Phys. Chem. C 114, 9672–9677(2010).
  109. "Effect of neutron irradiation on electrical and optical properties of InGaN/GaN light-emitting diodes", Hong-Yeol Kim, Jihyun Kim, F. Ren, and Soohwan Jang, J. Vac. Sci. Technol. B28, Issue 1, pp. 27-29 (2010).
  110. "Oxygen gas sensing at low temperature using indium zinc oxide-gated AlGaN/GaN high electron mobility transistors", Yu-Lin Wang, C.Y. Chang , Wantae Lim, B. S. Kang, H. T. Wang, F. Ren, S. J. Pearton and D. P. Norton, J. Vac. Sci. Technol. B 28, pp. 376-379 (2010).
  111. "Effects of Photoelectrochemical Etching of N-Polar and Ga-Polar Gallium Nitride on Sapphire Substrates", Younghun Jung, Kwang Hyeon Baik, Fan Ren, Stephen J. Pearton, and Jihyun Kim, J. Electrochem. Soc., Volume 157, pp. H676-H678 (2010).
  112. "Long-term stability study of botulinum toxin detection with AlGaN/GaN high electron mobility transistor based sensors", Yu-Lin Wang, B.H. Chu, C.Y. Chang, C.F. Lo, S.J. Pearton, A. Dabiran, P.P. Chow, F. Ren, Sensors and Actuators B 146, pp.349–352(2010).
  113. "Degradation of 150 nm mushroom gate InAlAs/InGaAs metamorphic high electron mobility transistors during dc stressing and thermal storage", K. H. Chen, C. Y. Chang, L. C. Leu, C. F. Lo, B. H. Chu, S. J. Pearton, F. Ren, J. Vac. Sci. Technol. B 28 pp.365-369(2010).
  114. "Detection of an endocrine disrupter biomarker, vitellogenin, in largemouth bass serum using AlGaN/GaN high electron mobility transistors", B. H. Chu, C. Y. Chang, K. Kroll, N. Denslow, Yu-Lin Wang, S. J. Pearton, A. M. Dabiran, A. M. Wowchak, B. Cui, P. P. Chow, and F. Ren, Appl. Phys. Lett. 96, 013701 (2010).
  115. "Passivation of AlN/GaN high electron mobility transistor using ozone treatment", C. F. Lo, C. Y. Chang, S. J. Pearton, I. I. Kravchenko, A. M. Dabiran, A. M. Wowchak, B. Cui, P. P. Chow, and F. Ren, J.Vac.Sci.Technol.B.28, 52 (2010).
  116. "Wireless Detection System for Glucose and pH Sensing in Exhaled Breath Condensate Using AlGaN/GaN High Electron Mobility Transistors", B.H.Chu, B.S.Kang, C.Y.Chang, F.Ren, A.Goh, A.Sciullo, W.Wu, J.Lin, B.P.Gila, S.J.Pearton, J.W. Johnson, E.L.Piner and K.J.Linthicum, IEEE Sensors Journal 10, 64 (2010).
  117. "Improvement in Bias Stability of Amorphous InGaZnO4 Thin Film Transistors With SiOX Passivation Layers", W.Lim, E.A.Douglas, D.P.Norton, S.J.Pearton, F.Ren, Y.W. Heo, S.Y. Son and J.H.Suh, J.Vac.Sci.Technol.B 28,116 (2010).
  118. "Chloride Ion Detection by InN Gated AlGaN/GaN High Electron Mobility Transistors", B. H. Chu, H. Lin, S. Gwo, Y. L. Wang, S. J. Pearton, J. W. Johnson, P. Rajagopal, J. Roberts, E. L. Piner, K. J. Linthicum and F. Ren, J. Vac. Sci. Technol. B 28, L5 (2010).
  119. "Electrical Characterization of 5 MeV Proton-Irradiated Few Layer Graphene", G. Ko, H.-Y. Kim, F. Ren, S. J. Pearton, and J. Kim,Electrochem.Solid State Lett.13, K32(2010).
  120. "Nitride and oxide semiconductor nanostructured hydrogen gas sensors", J.Wright, W.Lim, D.P.Norton, F.Ren, S.J.Pearton, J.Johnson and A.Ural, Semicond. Sci. Technol. 25, 024002 (2010).
  121. "Catalyst-free ZnO Nanowires Grown on a-plane GaN", C.Chen, C.Pan, F.Tsao,Y.Liu, C.W.Kuo, G.C.Chi, P.H.Chen, W.C.Lai, T.H.Hsueh, C.J.Tun, C.Y.Chang, S.J.Pearton and F.Ren,Vacuum, 84,803(2010).
  122. "Aluminum Gallium Nitride (GaN)/GaN High Electron Mobility Transistor-Based Sensors for Glucose Detection in Exhaled Breath Condensate", B. H. Chu, B. S. Kang, S. Hung, K. H. Chen, F. Ren, A. Sciullo, B. P. Gila, S. J. Pearton, J. Diabetes Science and Technology, 4, 171 (2010).
  123. "Low-voltage indium gallium zinc oxide thin film transistors on paper substrates", Wantae Lim, E. A. Douglas, D. P. Norton, S. J. Pearton, F. Ren, Young-Woo Heo, S. Y. Son, and J. H. Yuh, Appl. Phys. Lett. 96, 053510 (2010).
  124. "Recent advances in wide bandgap semiconductor biological and gas sensors", S.J. Pearton, F. Ren, Yu-Lin Wang, B.H. Chu, K.H. Chen, C.Y. Chang, Wantae Lim, Jenshan Lin, D.P. Norton, Prog., in Mat., Sci., 55, 1–59 (2010).
  125. "Optical and structural properties of Mg-ion implanted GaN nanowires", P.J. Huang, C.W. Chen, J.Y. Chen, G.C. Chi, C.J. Pan, C. C. Kuo, L.C. Chen, C. W. Hsu, K.H. Chen, S.C. Hung, C.Y. Chang, S.J. Pearton and F. Ren, Vacuum 83,797 (2009).
  126. "The study of low temperature hydrothermal growth of ZnO nanorods on stents and its applications of cell adhesion and viability", B. H. Chu, J. Lee, C. Y. Chang, P. Jiang, Y. Tsend, S. J. PEarton, A. Gupta, T. Lele, and F. Ren, Appl. Surf. Sci., 225, 8309-8312(2009).
  127. "Randomly oriented, upright SiO2 coated nanorods for reduced adhesion of mammalian cells", J. Lee. B. H. Chu, K. H. Chen, F. Ren, T. P. Lele, Biomat., 30, 4488-4493(2009).
  128. "Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes", Y. L. Wang, F. Ren, Y. Zhang, Q. Sun, C. D. Yerino, T. S. Ko, Y. S. Chyo, I. H. Lee, J. Hang, and S. J. Plearton, Appl. Phys. Lett., 94, 212108(2009).
  129. "Development of enhancement mode AlN/GaN high electron mobility transistors", C. Y. Chang, S. J. Pearton, C. F. LO, F. Ren, I. I. Kravchenko, A. M. Dabiran, A. M. Wowchak, B. Cui, and P.P. Cho, Appl. Phys. Lett., 94, 263505(2009).
  130. "Hydrogen sensing with Pt-functionalized GaN nanowires", J.S. Wright, W. Lim, B. P. Gila, S. J. Pearton, J. L. Johnson, A. Ural, and F. Ren, Sensors & Actu. B., 140, 196-199(2009).
  131. "Advances in Hydrogen, Carbon Dioxide, and Hydrocarbon Gas Sensor Technology Using GaN and ZnO-Based Devices", T. Anderson, F. Ren, S. J. Pearton, B. S. Kang, H. T. Wang, C. Y. Chang, and J S. Lin, Sensors, 9, 4669-4694(2009).
  132. "Low-resistance smooth-surface Ti/Al/Cr/Mo/Au n-type Ohmic contact to AlGaN/GaN heterostructures", Y. L. Lan, H.C. Lin, H. H. Liu, G. Y. Lee, F. Ren, S. J. Pearton, M. N. Chang, J. I. Chyi, Appl. Phys. Lett., 94, 243502(2009).
  133. "Fast detection of a protozoan pathogen, Perkinsus marinus, using AlGaN/GaN high electron mobility transistors", Y. L. Wang, B. H. Chu, K. H. Chen, C.Y.Chang, T. P. Lele, G. Papdia, J.K. Coleman, B.J. Sheppard, C. F Dungen, S. J.Pearton, J.W. Johnson, P. Rajagopal, J.C. Roberts, E.L. Piner, K.J. Linthicum, F. Ren, Appl. Phys. Lett., 84, 243901(2009).
  134. "Pd-catalyzed hydrogen sensing with InN nanobelts", J. S. Wright, W. Lim, B. P. Gial, S.J. Pearton, F. Ren, W.T. Lai, L.C. Chen, M. S, Hu, K. H. Chen, J. Vac. Sci. Technol. B., 27, L8-L`0(2009).
  135. "Effect of bias voltage polarity on hydrogen sensing with AlGaN/GaN Schottky diodes", T.J. Anderson, H.T. Wang, B.S. Kang, F. Rem, S.J. Pearton, A. Osinsky, A. Dabiran, and P.P. Chow, Appl. Surf. Sci., 255, 2524-2526(2009).
  136. "Surface morphology and optical properties of ZnO epilayers grown on Si(111) by metal organic chemical vapor deposition", S. C. Hng, P.J. Huang, C.E. Chan, W. Y. Uen, F Ren, S.J. Pearton, T.N. Yang, C.C. Chang, S.M. Lan, G.C. Chi, Appl. Surf. Sci., 6809-68132009).
  137. "Interface dependent electrical properties of amorphous InGaZnO4 thin film transistors", W. Lim, J. H. Jang, S. H. Kim, D.P. Norton, V. Craciun, S. J. Pearton, F. Ren, and H. Chen, J. Vac. Sci. & Technol. B., 27, 126-129(2009).
  138. "Review of recent advances in transition and lanthanide metal-doped GaN and ZnO", R. P. Davis, C. R. Abernathy, S.J.Pearton, D. P. Norton, M.P. Ivill, and F. Ren, Chem. Eng. Commu., 196, 1030-1053(2009).
  139. "Self-Annealing in Neutron-Irradiated AlGaN/GaN High Electron Mobility Transistors", H.Y. Kim, F. Ren, S.J.Pearton, J.Y.Kim, Electrochem. & Solid State Lett., 12, H173-H175(2009).
  140. "Rectifying ZnO:Ag/ZnO:Ga Thin-Film Junctions", F.J. Lugo, H.S. Kim, S. J. Pearton, c. R. Abernathy, B.P. Gila, D. P. Norton, Y. L. Wang, and F. Ren, Electrochem. & Solid State Lett., 12, H188-H190(2009).
  141. "Growth and Characterization of GaN Nanowires for Hydrogen Sensors", J. Johnson, Y. H. Choi, a. Ural, W. Lim, J.S. Wright, B.P. Gola, F. Ren, and S.J. Pearton, J. Electro. Mat., 38, 490-494(2009).
  142. "High mobility InGaZnO4 thin-film transistors on paper", W. Lim, E. A. Douglas, S.H. Kim, D. P. Norton, S. J. Pearton, F. Ren, H. Shen, W.H. Chang, Appl. Phys. Lett., 94, 072103(2009).
  143. "Minipressure sensor using AlGaN/GaN high electron mobility transistors", S. C. Hung, B. H. Chou, C. Y. Chang, C. F. Lo, K. H. Chen, Y. L. Wang, S.J. Pearton, Amir Dabiran, P. P. Chow3, G. C. Chi, and F. Ren, Appl. Phys. Lett., 94, 043903(2009).
  144. "Environmental stability of candidate dielectrics for GaN-based device applications", A. M. Herrero, B. P. Gila, A. Gerger, A. Scheuermann, R. Davies, C. R. Abernathy, and S. J. Pearton, J. Appl. Phys., 106, 074105(2009).
  145. "Optical and structural properties of Eu-diffused and doped ZnO nanowires", C.J. Pan, C.W. Chen, J.Y. Chen, P.J. Huang, G.C. Chi, C.Y. Chang, F. Ren, S.J. Pearton. Appl. Surf. Sci., 256, 187–190(2009).
  146. "UV excimer laser drilled high aspect ratio submicron via hole", K.H. Chen, Wenhsing Wu, Byung Hwan Chu, C.Y. Chang, Jenshan Lin, S.J. Pearton, D.P. Norton, F. Ren, Appl. Surf. Sci., 256, 183-186(2009).
  147. "Hydrogen sensing of N-polar and Ga-polar GaN Schottky diodes", Yu-Lin Wang, B.H. Chu, C.Y. Chang, K.H. Chen, Y. Zhang, Q. Sun, J. Han, S.J. Pearton, F. Ren Sensors and Actuators B 142, 175–178 (2009).
  148. "Effect of Gate Orientation on dc Characteristics of Si-Doped, Nonpolar AlGaN/GaN Metal-Oxide Semiconductor High Electron Mobility Transistors", C. Y. Chang, Yu-Lin Wang, B.P. Gila, A. P. Gerger, S.J. Pearton, C. F. Lo, F. Ren, Q. Sun, Y. Zhang, and J. Han, Appl. Phys., Lett., 95, 082110 (2009).
  149. "Proton irradiation effects on Sb-based heterojunction bipolar transistors", C. F. Lo, H.-Y. Kim, J. Kim, Shu-Han Chen, Sheng-Yu Wang, Jen-Inn Chyi, B. Y. Chou, K. H. Chen, Y. L. Wang, C. Y. Chang, S. J. Pearton, L. I. Kravchenko, S. Jang, F. Ren, J. Vac. Sci. Technol., B27, L33-37(2009).
  150. "190 nm excimer laser drilling of glass slices: Dependence of drilling rate and via hole shape on the diameter of the via hole", K. H. Chen, W. Wu, B. H. Chu, C. F. Lo, J. Lin, Y. L. Wang, C. Y. Chang, S. J. Pearton, and F. Ren, J.Vac.Sci.Technol.B 27,L42 (2009).
  151. "Cu-plated through-wafer vias for AlGaN/GaN high electron mobility transistors on Si", K.-H.Chen, F.Ren, A.Pais, Huikai Xie, B.P. Gila, S.J. Pearton, J. W. Johnson, P. Rajagopal, J. C. Roberts, E. L. Piner, and K. J. Linthicum, J.Vac.Sci.Technol.B 27, 2166-2169(2009).
  152. "Migration and luminescence enhancement effects of deuterium in ZnO/ZnCdO quantum wells", W. Lim, D. P. Norton, S. J. Pearton, X. J. Wang, W. M. Chen, I. A. Buyanova, A. Osinsky, J. W. Dong, B. Hertog, A. V. Thompson, W. V. Schoenfeld, Y. L. Wang and F. Ren, Appl. Phys. Lett., 92, pp.032103 (2008).
  153. "Hydrogen Effects on the Optical and Electrical Properties of ZnO Light-Emitting Diodes", Yu-Lin Wang, H. S. Kim, D. P. Norton, S. J. Pearton, and F. Renb, Electrochem. and Solid-State Lett., 11 pp.H88-H91 (2008).
  154. "High Performance Indium Gallium Zinc Oxide Transparent Thin-Film Transistors Fabricated By RF-Sputtering", W.Lim, S.Kim, Y.L.Wang, J.W.Lee, D.P.Norton, S.J. Pearton, F.Ren and I.Kravchenko, J. Electrochem. Soc.155, H383 (2008).
  155. "Ír-Based Diffusion Barriers for Ohmic Contacts to p-GaN", L.Voss, L.Stafford, B.P. Gila, S.J.Pearton and F.Ren, Appl. Surf. Sci.254 4134 (2008).
  156. "Carrier Concentration Dependence of Ti/Au Specific Contact Resistance on n-type Amorphous Indium Zinc Oxide Thin Films", W.Lim, D.P.Norton, J.Jang, V.Craciun, S.J.Pearton and F.Ren, Appl.Phys.Lett.92, 122102 (2008).
  157. "Phosphorus doped ZnO light emitting diodes fabricated via pulsed laser deposition", H. S. Kim, F. Lugo, S. J. Pearton, D. P. Norton, Yu-Lin Wang, and F. Ren, Appl. Phys. Lett. 92, 112108 (2008).
  158. "Dielectric passivation effects on ZnO light emitting diodes", Y. L. Wang, H.S. Kim, D.P. Norton, S.J. Pearton, and F. Ren, Appl. Phys. Lett. 92, 112101 (2008).
  159. "Pulse laser deposition of high-quality ZnO films using a high temperature deposited ZnO buffer layer", H.S. Kim, J.M. Erie, S.J. Peartoon, D.P. Norton, and F. Ren, Appl.Phys. A.91, 255 (2008).
  160. "Investigation of electrical and optical properties of ZnO thin films grown with O2/O3gas mixture", H.S. Kim, J. M. Erie, S.J. Peartoon, D.P. Norton, and F. Ren, Appl. Phys. A.91, 251 (2008).
  161. "Transparent Thin Film Transistors Based on IZO for Flexible Electronics", S.J. Pearton, W.Lim, Y.L.Wang, K.Shoo, D.P.Norton, J.Lee, F.Ren and J.M.Zavada, Key Engineering Materials: Innovation in Materials Science, 380, 99 (2008).
  162. "Synthesis and Characterization of Single Crystalline SnO2 Nanorods by High Pressure Pulsed Laser Deposition", L.C.Tien, S.J.Pearton, D.P.Norton and F.Ren, Appl.Phys.A. 91, 29 (2008).
  163. "Botulinum Toxin Detection Using AlGaN/GaN High Electron Mobility Transistors", Yu-Lin Wang, B. H. Chu, K. H. Chen, C.Y. Chang, T. P. Lele, Y. Tseng, S. J. Pearton1, J. Ramage, D. Hooten, A. Dabiran, P. P. Chow, and F. Ren, Appl.Phys.A. 93, 262101 (2008).
  164. "Microwave Performance of AlGaN/GaN High-Electron-Mobility Transistors on Si/SiO2/Poly-SiC Substrates", T.J. Anderson, F. Ren, J. Kim, J. Lin, M. Hlad, B.P. Gila, L. Voss, S.J. Pearton, P. Bove, H, Lahreche, and J. Thuret, J. Electron. Mater. 37,384(2008).
  165. "Indium Zinc Oxide Thin Films Deposited by Sputtering at Room Temperature", W.Lim, Y.L.Wang, F.Ren, D.P.Norton, I.I.Kravchenko, J.M.Zavada and S.J.Pearton, Appl. Surf. Sci. 254, 2878 (2008).
  166. "Dry Etching of CuCrO2 Thin Films", W.Lim, P.Sadik, D.P.Norton, S.J.Pearton and F.Ren, Appl.Surf.Sci. 254, 2359 (2008).
  167. "Surface and Bulk Thermal Annealing Effects on ZnO Crystals", W.Lim, V.Craciun, K.Siebein, B.P. Gila, D.P.Norton, S.J.Pearton and F.Ren, Appl. Surf. Sci. 254, 2396 (2008).
  168. "Migration and luminescence enhancement effects of deuterium in ZnO/ZnCdO quantum wells", W. Lim, D. P. Norton, S.J.Pearton, X.J.Wang, W. M. Chen, L.A. Buyanova, A. Osinsky, J.W. dong, B. Hertog, A.V. Thompson, W. V. Schoenfeld, Y.L. Wang, and F. Ren, Appl. Phys. Lett. 92, 032103 (2008).
  169. "RF Characteristics of Room-Temperature-Deposited, Small Gate Dimension Indium Zinc Oxide TFTs", Y.L. Wang, L. N. Covert, T.J. Anderson, W. Lim, j. Lin, S.j.Pearton, J. M. Zavada, and F. Ren, Electrochem.Solid.State Lett.11,H60(2008).
  170. "Ir Diffusion Barriers in Ni/Au Ohmic Contacts to p -Type CuCrO2", W.T. Lim, P.W. Sadik, D.P. Norton, B.P. Gila, S.J. Pearton, I.I. Kravchenko and F. Ren, J. Electron. Mater. 37,161 (2008).
  171. "GaN, ZnO and InN Nanowires and Devices", S.J. Pearton, B.S.Kang, B.P.Gila, D.P. Norton, O.Kryliouk, F.Ren, Y.W.Heo, C.Y.Chang, G.C.Chi, W.M.Wang and L.C.Chen, J. Nanosci. Nanotechnol.8, 99 (2008).
  172. "Role of Gate Oxide in AlGaN/GaN High-Electron-Mobility Transistor pH Sensors", B.S. Kang, H.T. Wang, F. Ren, M. Hlad, B.P. Gila, C. R. Abernathy, S. J. Pearton, C. Li, Z. N. Low, J. Lin, J.W. Johnson, P. Rajagopal, J. C. Roberts, E. L. iner, and K. J. Linthicum, J. Electronic Mat. 37, 550(2008).
  173. "Transparent Thin Film Transistors Based on InZnO For Flexible Electronics", S. J. Pearton, W.Lim,Y. L. Wang, K. Shoo, D.P.Norton, J. Lee, F.Ren and J. M. Zavada, Key Eng. Mat., 380, 99(2008).
  174. "Stable room temperature deposited amorphous InGaZnO4 thin film transistors", W. Lim, S.-H. Kim, Yu-Lin Wang, J. W. Lee, D. P. Norton, and S. J. Pearton, F. Ren, and I. I. Kravchenko, J. Vac. Sci. Technol. B, 26, 960 (2008).
  175. "Integration of Selective Area Anodized AgCl Thin Film with AlGaN/GaN High Electron Mobility Transistors for Chloride Ion Detection", S. C. Hung, Y. L. Wang, B. Hicks, S.J. Pearton2, F. Ren, J. W. Johnson, P. Rajagopa, J. C. Roberts, E. L. Piner, K. J. Linthicum, and G. C. Chi, Appl. Phys. Lett. 92, 193903 (2008).
  176. "c-erB-2 sensing using AlGaN/GaN High Electron Mobility Transistors for breast cancer detection", K.H. Chen, B. S. Kang, H. T. Wang, T. P. Lele, and F. Ren, Y. L. Wang, C.Y. Chang, and S. J. Pearton, J.W. Johnson, P. Rajagopal, J.C. Roberts, E.L. Piner, and K.J. Linthicum, Appl. Phys. Lett. 92, 192103(2008).
  177. "Residual strain in ZnO nanowires grown by catalyst-free chemical vapor deposition on GaN/sapphire (0001)", F. C. Tsao, J. Y. Chen, C. H. Kuo, G. C. Chi, C. J. Pan, P. J. Huang, C. J. Tun, B. J. Pong, T. H. Hsueh, C. Y. Chang, S. J. Pearton, and F. Ren Appl. Phys. Lett. 92, 203110(2008).
  178. "Integration of Selective Area Anodized AgCl Thin Film with AlGaN/GaN HEMTs for Chloride Ion Detection", S. C. Hung, Y. L. Wang, B. Hicks, S. J. Pearton, F. Ren, J. W. Johnson, P. Rajagopal, J. C. Roberts, E. L. Piner, K. J. Linthicum, and G. C. Chi, Electrochemical and Solid-State Letters, 11, H241-244(2008).
  179. "Materials and Process Development for ZnMgO/ZnO Light-Emitting Diodes", Yu-Lin Wang, F. Ren, H. S. Kim, D. P. Norton, and S. J. Pearton, IEEE J. Selected Topics in Quantum Electron. 14, pp.1048-1052 (2008).
  180. "Electrical detection of biomaterials using AlGaN/GaN high electron mobility transistors", B. S. Kang, H. T. Wang, F. Ren, and S. J. Pearton J. Applied Phys., 104, 031101 (2008).
  181. "Low Hg(II) ion concentration electrical detection with AlGaN/GaN high electron mobility transistors", K.H. Chen, H.W.Wang, B.S. Kang, C.Y. Chang, Y.L.Wang, T.P. Lele, F. Ren, S.J. Pearton, A. Dabiran, A. Osinsky, P.P. Chow, Sensors and Actuators B: Chemical, 4, (2008).
  182. "CO2 detection using polyethylenimine/starch functionalized AlGaN/GaN high electron mobility transistors", C. Y. Chang, B. S. Kang, H. T. Wang, F. Ren, Y. L. Wang, S. J. Pearton, D. M. Dennis, J. W. Johnson, P. Rajagopal, J. C. Roberts, E. L. Piner, and K. J. Linthicum, Appl. Phys. Lett., 92, 232102 (2008).
  183. "Room temperature hydrogen detection using Pd-coated GaN nanowires", W. Lim, J. S. Wright, B. P. Gila, J. L. Johnson, Ant Ural, T. Anderson, F. Ren, and S. J. Pearton, Appl. Phys. Lett., 93, 072109(2008).
  184. "Aging and stability of GaN high electron mobility transistors and light emitting diodes with TiB2- and Ir-based contacts", R. Khanna, L. Stafford, L.F. Voss, S. P, Peearton, H. T. Wang, T. Anderson, S.C. Hung, and F. Ren, IEEE Trans. On Dev. & Mat. Reliability, 8, 272-276(2008).
  185. "The control of cell adhesion and viability by zinc oxide nanorods", J. Lee, B.S. Kang, B. Hicks, T. F. Chancellor, Jr., B. H. Chu, H. T. Wang, B. G. Keselowsky, F. Ren, T. P. Lele, Biomaterials, 29, 3743–3749 (2008).
  186. "Wireless hydrogen sensor network using AlGaN/GaN high electron mobility transistor differential diode sensors", X. Yu, C. Li, Z.N. Low, J. Lina, T.J. Anderson, H.T.Wang, F. Ren, Y.L.Wang, C.Y. Chang, S.J. Pearton, C.H. Hsud, A. Osinsky, A. Dabiran, P. Chow, C. Balaban, J. Painter, Sensors and Actuators B 135, pp.188–194 (2008).
  187. "Selective-hydrogen sensing at room temperature with Pt-coated InN nanobelts", Wantae Lim, J. S. Wright, B. P. Gila, S. J. Pearton, F. Ren, Wei-Ta Lai, Li-Chyong Chen, Ming-Shien Hu, and Kuei-Hsien Chen, Applied Phys Lett., 93, 202109 (2008).
  188. "Growth and Characterization of GaN Nanowires for Hydrogen Sensors", J. L. Johnson, Y. Choi, A. Ural, W. Lim, J. S. Wright, B.P. Gila, F. Ren, and S.J. Pearton, J. Electron. Mat., 10.1007/s11664-008-0596 (2008).
  189. "Effect of bias voltage polarity on hydrogen sensing with AlGaN/GaN Schottky diodes", T.J. Anderson, H.T. Wang, B.S. Kang, F. Ren, S.J. Pearton, A. Osinsky, Amir Dabiran, P.P. Chow, Applied Surface Sci., 255, 2524–2526(2008).
  190. "Conformable coating of SiO2 on hydrothermally grown ZnO nanorods B. H. Chu, L. C. Leu, C.Y. Chang, F. Lugo, D. Norton, T. Lele, S. J. Pearton, and F. Ren , Appl. Phys. Lett. 93, 233111(2008).
  191. "Improved Free-Standing GaN Schottky Diode Characteristics Using Chemical Mechanical Polishing", Arul C. Arjunan , D. Singh , H.T. Wang, F.Ren , P. Kumar, R.K. Singh and S.J. Pearton, Appl.Surf.Sci.255, 3085 (2008).
  192. "Nanostructured Surface Morphology of ZnO Grown on p-type GaN and Si by Metal Organic Chemical Vapor Deposition", S. C. Hung, P. J. Huang, C. E. Chan, W. Y. Uen, F. Ren, S. J. Pearton, T. N. Yang, C. C. Chiang, S. M. Lan, and G. C. Chi, Appl. Surf. Sci. 255, 3016 (2008).
  193. "Towards Conductive Traces: Dip Pen Nanolithography of Silver Nanoparticle-Based Inks", H.T. Wang, O. Nafday, J.R. Haaheim, E. Tevaarwerk, N.A. Amro, R.G. Sanedrin, C.Y. Chang, F. Ren and S.J. Pearton, Appl.Phys.Lett. 93, 143105(2008).
  194. "Reduction of Dry Etch Damage to GaAs Using Pulse-Time Modulated Plasmas", R. Khanna, L. Stafford, S. J. Pearton, H. T. Wang, F. Ren, R. Westermann, D. Johnson, and C. Constantine, Electrochemical and Solid-State Lett., 10, pp.H139-H141 (2007).
  195. "Low temperature <100 °C patterned growth of ZnO nanorod arrays on Si", B. S. Kang, S. J. Pearton, and F. Ren, Appl. Phys. Lett., 90, 083104( 2007).
  196. "Detection of hydrogen with SnO2-coated ZnO nanorods", L.C. Tien, D.P. Norton, B.P. Gila, S.J. Pearton, Hung-Ta Wang, B.S. Kang, F. Ren, Appl.Surface Sci., 53, pp.4748–4752 (2007).
  197. "Nucleation control for ZnO nanorods grown by catalyst-driven molecular beam epitaxy", L.C. Tien, D.P. Norton, S.J. Pearton, Hung-Ta Wang, F. Ren, Appl.Surface Sci., 53, pp.4620-4625 (2007).
  198. "Annealing and measurement temperature dependence of W2B and W2B5 based rectifying contacts to p-GaN", Lars Voss, L. Stafford, G. T. Thaler, C. R. Abernathy, S.J. Pearton, J.J. Chen and E. Ren, J.Electron.Mater.36, 384 (2007).
  199. "Effect of cyrogenic temperature deposition various metal contacts on bulk single crystal n-type ZnO", J.S. Wright, L. Stafford, B. P. Gila, D.P. Norton, S.J. Pearton, Hung Ta Wang and E. Ren, J.Electron.Mater.36, 488 (2007).
  200. "Effect of cryogenic temperature deposition on Au contacts to bulk, single-crystal n-type ZnO", J.S. Wright, Rohit Khanna, L.F. Voss, L. Stafford, B.P. Gila, D.P. Norton, S.J. Pearton, Hung-Ta Wang, S. Jang, T. Anderson, J.J. Chen, B.S. Kang, F. Ren, H. Shen, Jeffrey R. LaRoche, Kelly Ip, Appl. Surface Sci., 53, pp.3766-3772 (2007).
  201. "Ir/Au Ohmic Contacts on Bulk, Single-Crystal n-Type ZnO". J. S. Wright, R. Khanna, L. Stafford, B. P. Gila, D. P. Norton, S. J. Pearton, F. Ren, and I. I. Kravchenkoc, J. Electrochem. Soc., 154, pp.H161-H165 (2007).
  202. "Control of nucleation site density of GaN nanowires", Chih-Yang Chang, S.J. Pearton, Ping-Jung Huang, Gou-Chung Chi, Hung-Ta Wang, Jau-Juin Chen, F. Ren, Kuei-Hsien Chen, Li-Chyong Chen, Appl. Surface Sci., 53, pp.3196-3220 (2007).
  203. "Comparison of E-beam and sputter-deposited ITO film for 1.55 micron metal-semiconductor-metal photodetector applications", S. Jang, B. S. Kang, F. Ren, N. W. Emanetoglu, H. She " Comparison of E-beam and Sputter-Deposited ITO , W.H. Chang, B. P. Gila, M. Hlad and S.J.Pearton, J. Electrochem. Soc. 154, H336 (2007).
  204. "Stable hydrogen sensors from AlGaN/GaN heterostructure diodes with TiB2-based Ohmic contacts," H.T. Wang, T.J. Anderson, B.S. Kang, F. Ren, C.Li, Z.N. Low, J. Lin, B.P.Gila, S.J.Pearton, A. Osinsky and A. Dabiran, Appl. Phys. Lett.90, 252109 (2007).
  205. "Demonstration of Hybrid AlxGa1¡xAs-Polysilicon Microelectromechanical Tunable Filter", E. Ochoa, T. Nelson, R. Bedford, L. Starman, T. Anderson, and F. Ren, IEEE Photonics Technol. Lett., 19, pp. 381-383, 2007.
  206. "Flip-bonding with SU-8 for Hybrid AlxGa1¡xAs-Polysilicon MEMS-Tunable Filter", E. Ochoa, L. Starman, T. Nelson, R. Bedford, J. Ehret, M, Harvey, T. Anderson and F. Ren, J. Micro-Nanolithography MEMS and MOENS, 6, pp.33007-33009 (2007).
  207. "Functionalizing Zn- and O-terminated ZnO with thiols ", P.W. Sadik, S.J. Pearton, D.P. Norton, E. Lambers and F. Ren, J. Appl. Phys. 101, 104514 (2007).
  208. "Improved long-term thermal stability of InGaN/GaN multiple quantum well light-emitting diodes using TiB2- and Ir-based p-Ohmic contacts", L. Stafford, Lars Voss, S.J. Pearton, H.T. Wang, and E. Ren, Appl.Phys.Lett. 90, 242103 (2007).
  209. "Ohmic contacts to p-type GaN based on TaN, TiN, and ZrN", L. Stafford, Lars Voss, R. Khanna, B. P. Gila, C.R. Abernathy, S.J. Pearton, F. Ren and I.I Kravchenko, Appl. Phys.Lett. 90, 212107 (2007).
  210. "The Promise and Perils of Wide-Bandgap Semiconductor Nanowires for Sensing", Electronic, and Photonic Applications", S. J. Pearton, D.P. Norton and F Ren, Small 3, 1144 (2007).
  211. "Room temperature deposited indium zinc oxide thin film transistors", Y.L. Wang, F. Ren, W. Lim, D.P. Norton, S.J. Pearton, I.I Kravchenko, J. M. Zavada, Appl. Phys. Lett. 90, 232103 (2007).
  212. "Ir-Based Schottky and Ohmic Contacts on n-GaN", Rohit Khanna, B. P. Gila, L. Stafford, S. J. Pearton, F. Ren, and I. I. Kravchenko, Electrochem. Soc. 154, H584 (2007).
  213. "Cathodoluminescence Studies of Carrier Concentration Dependence for Electron –Irradiation Effects in p-GaN", O.Lopatiuk-Tirpak, L.Chernyak, Y.L.Wang, F.Ren, S.J.Pearton, K.Gartsman and Y.Feldman, Appl.Phys.Lett. 90, 172111 (2007).
  214. "Analysis and Design of AlGaN/GaN HEMT Resistive Mixers", T. Chang, W. Wu, J. Lin, S. Jang, F. Ren, S.J Pearton, R. Fitch and J. Gillespie, Microwave and Optical Techn. Lett. 49, 1152 (2007).
  215. "Band offsets in the Mg0.5Ca0.5O/GaN heterostructure system", J.J. Chen, M. Hlad, A.P. Gerger, B.P. Gila, F. Re, C.R. Abernathy and S.J.Pearton, J.Electron.Mater. 36, 368 (2007).
  216. "Effect of proton irradiation on interface state density in Sc2O3/GaN and Sc2O3/Mg/GaN diodes", K.K. Allums, M. Hlad, A.P. Gerger. S.P. Gila, C. Ra. Abernathy, c.R.Abernathy, S.J.Pearton, F. Ren, R. Dwivedi, T.N Foarty and R. Wilkins, J.Electron.Mater.36, 519 (2007).
  217. "Improved long-term thermal stability at 350 C of TiB2 based ohmic contact on AlGaN/GaN high electron mobility transistors", R. Khanna, L. Stafford, S.J.Pearton, T.J. Anderson, F. Ren, I.I.Kravchenko, A.Dabiran, A.Osinsky, J.Y.Lee, K.Y. Lee and J. Kim, J. Electron. Mater. 36, 379 (2007).
  218. "Ni/Au ohmic contacts to p-type Mg-doped CuCrO2 epitaxial layers", W.T. Lim, L. Stafford, P.W. Sadik, D.P. Norton, S.J.Pearton, Y.L. Wang, and F. Ren, Appl. Phys. Lett. 90,142101 (2007).
  219. "Reaction-Limited Wet Etching of CuCrO2", W. T. Lim, P. W. Sadik, D.P. Norton, S.J. Pearton, Y.L. Wang, and F. Ren, Electrochem.Solid State Lett.10, H178 (2007).
  220. "Thermal stability of Ohmic contacts to InN", R.Khanna, B. P. Gila, L. Stafford, S. J. Pearton, F. Ren, I.I. Kravchenko, A. Dabiran and A. Osinsky, Appl. Phys. Lett. 90, 162107 (2007).
  221. "Incorporation and Drift of Hydrogen at Low Temperatures in ZnO", Y.L.Wang, F.Ren, H.S.Kim, S.J.Pearton and D.P.Norton, Appl.Phys.Lett. 90, 092116 (2007).
  222. "Reduction of Dry Etch Damage to GaAs Using Pulse-Time Modulated Plasmas", R. Khanna, L. Stafford, S. J. Pearton, H. T. Wang, F. Ren, R. Westermann, D. Johnson, and C. Constantine, Electrochem.Solid-State Lett. 10, H139 (2007).
  223. "Nucleation control for ZnO nanorods grown by catalyst-driven molecular beam epitaxy", L.C. Tien, D.P. Norton, S.J. Pearton, Hung-Ta Wang and F. Ren, Appl. Surf. Sci., 253, 4620 (2007).
  224. "Prostate Specific Antigen Detection using AlGaN/GaN High Electron Mobility Transistors", B. S. Kang, H. T. Wang, T. P. Lele, and F. Ren, S. J. Pearton, J.W. Johnson, P. Rajagopal, J.C. Roberts, E.L. Piner, and K.J. Linthicum, Appl. Phys Lett., 91, 112106 (2007).
  225. "Selective Detection of Hg(II) Ions from Cu(II) and Pb(II) Using AlGaN/GaN High Electron Mobility Transistors", H. T. Wang, B. S. Kang, T. F. Chancellor, Jr., T. P. Lele, Y. Tseng, F. Ren, S. J. Pearton, A. Dabiran, A. Osinsky, and P. P. Chow, Electrochemical and Solid-State Letters, 10, pp.J150-J153 (2007).
  226. "Electrical detection of kidney injury molecule-1 with AlGaN/GaN high electron mobility transistors", H. T. Wang, B. S. Kang, F. Ren, S. J. Pearton, J. W. Johnson, P. Rajagopal, J. C. Roberts, E. L. Piner, and K. J. Linthicum, Appl. Phys. Lett., 91, 222101(2007).
  227. "Enzymatic glucose detection using ZnO nanorods on the gate region of AlGaN/GaN high electron mobility transistors", B. S. Kang, H. T. Wang, F. Ren, S. J. Pearton, T. E. Morey, D. M. Dennis, J. W. Johnson, P. Rajagopal, J. C. Roberts, E. L. Piner, and K. J. Linthicum, Appl. Phys. Lett., 91, 252103 (2007).
  228. "pH sensor using AlGaN/GaN high electron mobility transistors with Sc2O3 in the gate region", B. S. Kang, H. T. Wang, F. Ren, B. P. Gila, C. R. Abernathy, S. J. Peartona, J. W. Johnson, P. Rajagopal, J. C. Roberts, E. L. Piner, and K. J. Linthicum, Appl. Phys. Lett., 91, 012110 (2007).
  229. "Interfacial Differences in Enhanced Schottky Barrier Height Au/n-GaAs Diodes Deposited at 77K", A.M. Herrero, A.M. Gerger, B.P. Gila, S.J. Pearton, H.T. Wang, S.Jang, T.Anderson, J.J. Chen, B.S. Kang, F. Ren, H. Shen, J.R. LaRoche and K.V. Smith, Appl. Surf. Sci. 253, 3298 (2007).
  230. "Ir-Based Schottky and Ohmic Contacts on n-GaN", R. Khanna, B.P. Gila, L. Stafford, S.J. Pearton, F. Ren and I.I. Kravchenko, J. Electrochem. Soc. 154, H584 (2007).
  231. "The Promise and Perils of Wide-Bandgap Semiconductor Nanowires for Sensing, Electronic, and Photonic Applications", S. J. Pearton, D.P. Norton and F Ren, Small 3, 1144 (2007).
  232. "Room-Temperature-Deposited Indium-Zinc Oxide Thin Films with Controlled Conductivity", W. Lim, Y.L. Wang, F. Ren, D.P. Nnorton, I.I. Kravchenko , J. M. Zavada, and S.J.Pearton, Electrochem.Sol.State Lett.10, H267 (2007).
  233. "W2B and CrB2 Diffusion Barriers for Ni/Au Contacts to p-GaN", L.F.Voss, L.Stafford, J.S.Wright, S.J.Pearton, F.Ren and I.I. Kravchenko, Appl.Phys.Lett. 91,042105 (2007).
  234. "Fast electrical detection of Hg(II) ions with AlGaN/GaN high electron mobility transistors", H.T. Wang, B.S. Kang, T. F. Chancellor, Jr., T. P. Lele, Y. Tseng, F. Ren, S.J. Pearton, J.W. Johnson, P. Rajagopal, J.C. Roberts, E.L. Piner and K.J. Linthicum, Appl. Phys. Lett. 91, 042114 (2007).
  235. "Desing and transparent indium tin oxide-based interdigitated fingers for metal semiductor meatl photodetector", S. Jang, F. Ren, N. Emnaetoglu, H. Shen, W. Chang, and S.J. Pearton, J. Electrochem. Soc. 154, H830 (2007).
  236. "Polydiacetylene-based selective NH3 gas sensor using Sc2O3/GaN structures", G. S. Lee, C. Lee, H. Choi, D. J. Ahn, J. Kim, B. P. Gila, C. R. Abernathy, S. J. Pearton, and F. Ren, Phys.Stat.Solidi A204, 3556 (2007).
  237. "A hydrogen leakage detection system using self-powered wireless hydrogen sensor nodes", J. Jun, B. Chou, J. Lin, A. Phipps, X. Shengwen, K. Ngo, D. Johnson, A. Kasyap, T. Nishida, H.T. Wang, B.Kang, F.Ren, L.Tien, P.Sadik, D.Norton, L.F.Voss and S.J.Pearton, Solid-State Electron., 51, 1018(2007).
  238. "ZnO-Based Nanowires", S.J.Pearton, B.Kang, L.Tien, D.P.Norton, Y.W.Heo and F.Ren, Nano 2, 201(2007).
  239. "Doping level dependence of electron irradiation-induced minority carrier diffusion length increase in Mg-doped GaN", O. Lopatiuk-Tirpak, L. Chernyak, Y.L. Wang, F. Ren, S.J.Pearton and K. Gartsman, Appl. Phys. Lett. 91, 092107 (2007).
  240. "Simple fabrication of nanoporous films on ZnO for enhanced light emission", J.Bang, K.Kim, S.Mok, F.Ren, S.J.Pearton, K.H.Baik, S.H.Kim, J.Kim and K.Shin, Phys. Stat. Solidi A204, 3417(2007).
  241. "Penetrating living cells using semiconductor nanowires", S. J. Pearton, T. Lele, Y. Tseng and F. Ren, Trends in Biotechnology, 25, 481(2007).
  242. "Thermal Stability of Nitride-Based Diffusion Barriers for Ohmic Contacts to n –GaN", L. F. Voss, L. Stafford, R. Khanna, B.P. Gila, C. R.Abernahty, S.J.Pearton, F. Ren, I.I. Kravchenko, J.Electron.Mater.36, 1662 (2007).
  243. "Behavior of Rapid Thermal Annealed ZnO:P films Grown by Pulsed Laser Deposition", H. S. Kim, S.J. Pearton, D.P. Nortpon, and F. Ren, J. Appl. Phys. 102, 104904 (2007).
  244. "Exhaled-Breath Detection Using AlGaN/GaN High Electron Mobility Transistors Integrated with a Peltier Element", B.S. Kang, H.T. Wang, F. Ren, B.P. Gila, C.R.Abernathy, S.J. Pearton, D. M. Dennis, J.W. Johnson, P. Rajagopal, J.C. Roberts, E.L. Piner and K.J. Linthicum, Electrochem. Solid.State Lett.11, J19 (2007).
  245. "Determination of MgO/GaN heterojunction band offsets by x-ray photoelectron spectroscopy", J.J. Chen, B. P. Gila, M. Hlad, and A. Gerger, F. Ren, C. R.Abernathy, and S.J.Pearton, Apply. Phys. Lett., 88, 042113 (2006).
  246. "Improved thermally stable ohmic contacts on p-GaN based on W2B". L. Voss, Rohit Khanna, S. J. Pearton, F. Ren, and I. Kravchenko, Appy. Phys. Lett., 88, 012104 (2006).
  247. "Comparison of Ti/Al/Pt/Au and Ti/Au Ohmic contacts on n-type ZnCdO", Jau-Jiun Chen, Soohwan Jang, F. Ren, S. Rawal, Yuanjie Li, Hyun-Sik Kim, D. P. Norton, S. J. Pearton, and A. Osinsky, Appy. Phys. Lett., 88, 012109 (2006).
  248. "Electrical Detection of Deoxyribonucleic Acid Hybridization with AlGaN/GaN High Electron Mobility Transistors". B. S. Kang, J. J. Chen, F. Ren, S. J. Pearton, J.W. Johnson, P. Rajagopal, J.C. Roberts, E.L. Piner, and K.J. Linthicum, Appy. Phys. Lett., 89, 122102 (2006).
  249. "Contacts to ZnO", K. Ip, G.T. Thaler, Hyucksoo Yang, Sang Youn Han, Yuanjie Li, D.P. Norton, S.J. Pearton, Soowhan Jang, F. Ren, Journal of Crystal Growth 287, pp. 149–156 (2006).
  250. "Thermal simulations of three-dimensional integrated multichip module with GaN power amplifier and Si modulator", T. J. Anderson and F. Ren, L. Covert, J. Lin, and S. J. Pearton, J. Vac. Sci. Technol. B 24„ pp.284-287 (2006).
  251. "Effect of Ozone Cleaning and Annealing on Ti/Al/Pt/Au Ohmic Contacts on GaN Nanowires", Chih-Yang Chang, Tian-Wey Lan, Gou-Chung Chi, Li-Chyong Chen, Kuei-Hsien Chen, Jau-Juin Chen, Soohwan Jang, F. Ren, and S. J. Peartone, Electrochem. & Solid-State Lett., 9, pp.G155-G157 (2006).
  252. "Band-edge electroluminescence from N+-implanted bulk ZnO", Hung-Ta Wang, B. S. Kang, Jau-Jiun Ch`en, T. Anderson, S. Jang, and F. Ren, H. S. Kim, Y. J. Li, D. P. Norton, and S. J. Pearton, Appl. Phys. Lett., 88, 102107 (2006).
  253. "Simulation of vertical and lateral ZnO light-emitting diodes", Soohwan Jang, J. J. Chen, F. Ren, Hyuck-Soo Yang, Sang-Youn Han, D. P. Norton, and S. J. Pearton, J. Vac. Sci. Technol., B 24, pp. 690-694 (2006).
  254. "Thermally Stable TiB2 Ohmic Contacts on n-ZnO", J. S. Wright, R. Khanna, D. P. Norton, S. J. Pearton, and F. Ren, and I. I. Kravchenkoc, Electrochem. & Solid-State Lett., 9, pp.G164-G166 (2006).
  255. "Selective and Nonselective Wet Etching of Zn0.9Mg0.1O/ZnO", J.J. Chen, S. Janf, F. Ren, Y. Li, H.S. Kim, D.P. Norton, S.J. Pearton, A. Osonky, S.N.G. Chu, and J.F. Weaver, J. of Electonic Mat., 35, pp.516-519(2006).
  256. "Annealing Temperature Dependence of TiB2 Schottky Barrier Contacts on n-GaN", R. Khanna, S.J. Pearton, F. Ren, and I. Kravchenko, J. of Electonic Mat., 35, pp.658-662 (2006).
  257. "Comparison of Laser-Wavelength Operation for Drilling of Via Holes in AlGaN/GaN HEMTs on SiC Substrates", T.J. Anderson, F. Ren, L. Covert, J. Lin, S.J. Pearton, T.W. Darlmple, C. Bozada, R.C. Fitch, N. Moser, R.G. Bedford, and M. Schimpf, J. of Electonic Mat., 35, pp.675-679 (2006).
  258. "Selective Dry Etching of (Sc2O3)x(Ga2O3)1-x Gate Dielectrics and Surface Passivation Films on GaN", M. Hlad, L. Voss, B.P. Gila, C.R. Abernathy, S.J. Pearton, and F. Ren, J. of Electonic Mat., 35, pp.680-684 (2006).
  259. "Si-Diffused GaN for Enhancement-Mode GaN MOSFET on Si Applications", S. Jang, F. Ren, S.J. Pearton, B.P. Gila, M. Hlad, C.R. Abernathy, H. Yang, C.J. Pan, J-I Chyi, P. Bove, H. Lahreche, and J. Thuret, J. of Electonic Mat., 35, pp.685-690 (2006).
  260. "Electrical Transport Properties of Single GaN and InN Nanowires", C.-Y. Chang, G. Chi,W.-M. Wang, L.-C.G. Chen, K.-H. Chen, F. Ren, and S.J. Pearton, J. of Electonic Mat., 35, pp.738-743 (2006).
  261. "ZnO Spintronics And Nanowire Devices", S.J.Pearton, D.P.Norton, Y.W.Heo, L.C.Tien, M.P.Ivill, Y.Li, B.S.Kang, F. Ren, J.Kelly and A.F.Hebard, J. Electronic Mat., 35, pp.862868(2006).
  262. "Thermal Considerations in Design of Vertically Integrated Si/GaN/SiC Multichip Modules", T. J. Anderson, F. Ren, L. Covert, J. Lin, and S. J. Peartonc, J. Electrochem. Soc. 153, pp.G906-G910 (2006).
  263. "Improved Au Schottky contacts on GaAs using cryogenic metal deposition" Hung-Ta Wang, S. Jang, T. Anderson, J. J. Chen, B. S. Kang, F. Ren, A. Herrero, A. M. Gerger, B. P. Gila, S. J. Peartona, H. Shen, Jeffrey R. LaRoche and Kurt V. Smith, J. Vac. Sci. Technol. B 24, pp.1799-1802 (2006).
  264. "Annealing and measurement temperature dependence of W2B5-based rectifying contacts to n-GaN" Rohit Khanna, S.J. Pearton,, F. Ren, I. Kravchenko, Applied Surface Science 252, pp. 5814–5819 (2006).
  265. "Carrier concentration dependence of acceptor activation energy in p-type ZnO", O. Lopatiuk-Tirpak, W. V. Schoenfeld, L. Chernyaka, F. X. Xiu and J. L. Liu, S. Jang, F. Ren, S. J. Pearton, A. Osinsky and P. Chow, Appl. Phys. Lett., 88, 202110 (2006).
  266. "Electrical Performance of GaN Schottky Rectifiers on Si Substrates", L. Voss, S. J. Pearton, F. Ren, P. Bove, H. Lahreche, and J. Thuretc, J. Electrochem. Soc., 153, pp. G681-G684 (2006).
  267. "Implantation temperature dependence of Si activation in AlGaN", Y. Irokawa, O. Ishiguro and T. Kachi, S. J. Pearton, and F. Ren, Appl. Phys. Lett., 88, pp.182106 (2006).
  268. "Band offsets in the Sc2O3 /GaN heterojunction system", J.-J. Chen, B. P. Gila, M. Hlad, A. Gerger, C. R. Abernathy and S. J. Pearton, Appl. Phys. Lett., 88, pp.142115 (2006).
  269. "Electroluminescence from ZnO nanowire/polymer composite p-n junction", Chih-Yang Chang, Fu-Chun Tsao, Ching-Jen Pan, Gou-Chung Chi, Hung-Ta Wang, Jau-Juin Chen, F. Ren, D. P. Norton and S. J. Peartona, Kuei-Hsien Chen and Li-Chyong Chen, Appl. Phys. Lett., 88, pp. 173503 (2006).
  270. "Ti/Au Ohmic Contacts to Al-Doped n-ZnO Grown by Pulsed Laser Deposition", J. J. Chen, T. J. Anderson, S. Jang, F. Ren, Y. J. Li, H.-S. Kim, B. P. Gila, D. P. Norton, and S. J. Peartonb, J. Electrochem. Soc., 153, pp. G462-G464 (2006).
  271. "Low specific contact resistance Ti/Au contacts on ZnO", J.-J. Chen, Soohwan Jang, T. J. Anderson, F. Ren, Yuanjie Li, Hyun-Sik Kim, B. P. Gila, D. P. Norton, and S. J. Peartona, Appl. Phys. Lett., 88, pp. 122107 (2006).
  272. "Comparison of electrical and reliability performances of TiB2, CrB2, and W2B5 based Ohmic contacts on n-GaN", Rohit Khanna, S. J. Peartona, F. Ren, I. I. Kravchenko, J. Vac. Sci. Technol. B 24 pp.744-749 (2006).
  273. "Laser ablation of via holes in GaN and AlGaN/GaN high electron mobility transistor structures", Travis Anderson, Fan Ren, Stephen J. Pearton, Michael A. Mastro, Ron T. Holm, Rich L. Henry, Charles R. Eddy, Jr., Joon Yeob Lee, Kwan-Young Lee, and Jihyun Kim, J. Vac. Sci. Technol. B 245, pp. 1071-1075 (2006).
  274. "Schottky barrier height of boride-based rectifying contacts to p-GaN", L. Stafford, L. F. Voss, S. J. Pearton, J. J. Chen and F. Ren, Appl. Phys. Lett., 88, pp. 132110 (2006).
  275. "AlGaN/GaN high electron mobility transistors on Si/SiO2/poly-SiC substrates", T. J. Anderson, F. Ren, L. Voss, M. Hlad, B. P. Gila, L. Covert and J. Lin, S. J. Peartona, P. Bove, H. Lahreche, and J. Thuret, J. Vac. Sci. Technol. B 245, pp. 2302-2305 (2006).
  276. "Increased Schottky barrier heights for Au on n- and p-type GaN using cryogenic metal deposition", Hung-Ta Wang, S. Jang, T. Anderson, J. J. Chen, B. S. Kang, F. Ren, L. F. Voss, L. Stafford, R. Khanna, B. P. Gila, S. J. Peartona, and H. Shen, Jeffrey R. LaRoche and Kurt V. Smith, Appl. Phys. Lett., 88, pp. 112106 (2006).
  277. "Epitaxial growth of Sc2O3 films on GaN", A. M. Herrero, B. P. Gila, C. R. Abernathy, S. J. Pearton, V. Craciun and K. Siebein, F. Ren, Appl. Phys. Lett., 88, pp. 092117 (2006).
  278. "Studies of minority carrier diffusion length increase in p-type ZnO:Sb", O. Lopatiuk-Tirpak, L. Chernyaka, F. X. Xiu, J. L. Liu, S. Jang, F. Ren, S. J. Pearton, K. Gartsman, Y. Feldman, A. Osinsky and P. Chow, Appl. Phys. Lett., 100, pp. 086101 (2006).
  279. "Dry etching of bulk single-crystal ZnO in CH4/H2-based plasma chemistries", Wantae Lim, Lars Voss, Rohit Khanna, B.P. Gila, D.P. Norto, S.J. Pearton, and F. Ren, Applied Surface Science 253, pp. 889–894 (2006).
  280. "Thermal stability of Ti/Al/Pt/Au and Ti/Au Ohmic contacts on n-type ZnCdO", Jau-Jiun Chen, Soohwan Jang, F. Rena, S. Rawal, Yuanjie Li, Hyun-Sik Kim, D.P. Norton, S.J. Pearton, and A. Osinsky, Applied Surface Science 253, pp. 746–752 (2006).
  281. "Use of TiB2 diffusion barriers for Ni/Au ohmic contacts on p-GaN", Lars Voss, Rohit Khanna, S.J. Pearton, F. Ren, I.I. Kravchenko, Applied Surface Science 253, pp. 1255–1259 (2006).
  282. "Comparison of CH4/H2 and C2H6/H2 inductively coupled plasma etching of ZnO", Wantae Lim, Lars Voss, Rohit Khanna, B.P. Gila, D.P. Norton, S.J. Pearton, F. Ren, Applied Surface Science 253, pp. 1269–1273 (2006).
  283. "Stability of Ti/Al/ZrB2/Ti/Au ohmic contacts on n-GaN", R. Khanna, S.J. Pearton, F. Ren, I.I. Kravchenko, Applied Surface Science 253, pp. 2340–2344 (2006).
  284. "ZrB2-based Ohmic contacts to p-GaN", Lars Voss, S.J. Pearton, F. Ren, I.I. Kravchenko, Applied Surface Science, 253, pp. 1934–1938 (2006).
  285. "ZrB2 Schottky diode contacts on n-GaN", R. Khanna, K. Ramani, V. Cracium, R. Singh, S.J. Pearton, F. Ren, I.I. Kravchenko, Applied Surface Science, 253, pp. 2315–2319 (2006).
  286. "ZrB2/Pt/Au Ohmic contacts on bulk, single-crystal ZnO", J.S. Wright, Rohit Khanna, K. Ramani, V. Cranciun, R. Singh, D.P. Norton, S.J. Pearton, F. Ren, I.I. Kravchenko, Applied Surface Science, 253, pp. 2465–2469 (2006).
  287. "Novel dielectric for gate oxides and surface passivation on GaN", B.P. Gila, G.T. Thaler, A.H. Onstine, M. Hlad, A. Gerger, A. Herrero, K.K. Allums, D. Stodilka, S. Jang, B. Kang, T. Anderson, C.R. Abernathy, F. Ren and S.J. Pearton, Solid State Electronics, 50, pp. 1016-1023 (2006).
  288. "Dry etching of MgCaO gate dielectric and passivation layer on GaN", M. Hlad, L.V oss, B.P. Gila, C.R. Abernathy, S.J. Pearton and F. Ren, Applied Surface Science, 252, pp.8010-8014 (2006).
  289. "Strain measurement in 6H-SiC under external stress", J.Kim, F.Ren and S.J.Pearton, J. Ceramic Processing Research, 7, pp.239-240 (2006).
  290. "Effective temperature measurements of AlGaN/GaN-based HEMT under various load lines using micro-Raman technique", J. Kim, J.A. Freitas Jr., J. Mittereder, R. Fitch, B.S. Kang, S.J. Pearton and F. Ren, Solid State Electronics, 50 pp.408-411 (2006).
  291. "ITO/Ti/Au Ohmic Contacts on n-type ZnO", B.S. Kang, J.J. Chen, F. Ren, Y. Li, H.S. Kim, D.P. Norton and S.J. Pearton, Appl. Phys. Lett., 88, 182101 (2006).
  292. "Detection of CO Using Bulk ZnO Schottky Rectifiers", B.S. Kang, F. Ren, K. Ip, Y. W. Heo, B.P.Gila, C. R.Abernathy, D.P.Norton and S.J.Pearton, Appl. Phys. A pp.259-261 (2005).
  293. "Comparison of MOS And Schottky W/Pt-GaN Diodes for Hydrogen Detection", B.S.Kamg, S.Kim, F.Ren, B.P.Gila, C.R.Abernathy and S.J.Pearton, Sensors and Actuators, B105, pp.232-236 (2005).
  294. "Effect of inductively coupled plasma damage on performance of GaN–InGaN multiquantum-well light-emitting diodes Hyuck Soo Yang, Sang Youn Han, K. H. Baik, and S. J. Pearton, Appl. Phys Lett. 86, 102104-1-3 (2005).
  295. "Piezoelectric polarization-induced two dimensional electron gases in AlGaN/GaN heteroepitaxial structures: Application for micro-pressure sensors", S.N.G. Chu, F. Ren, S.J. Pearton, B.S. Kang, S. Kim, B.P. Gila, C.R. Abernathy, J.-I. Chyi, W.J. Johnson, J. Lin, Materials Science and Engineering A 409, pp.340–347(2005).
  296. "Si+ Ion Implantation into GaN at Cryogenic Temperatures", Y. Irokawa, O. Fujishima, T. Kachi, S. J. Pearton, and F. Ren, Electrochem. and Solid-State Lett., 8,. pp.G95-G97 (2005).
  297. "Hydrogen and ozone gas sensing using multiple ZnO nanorods", B.S.Kang, Y.W.Heo, L.C.Tien, D.P.Norton, F. Ren, B.P.Gila and S.J.Pearton, Appl. Phys. A 80, 1029–1032 (2005).
  298. "Use of 370 nm UV light for selective-area fibroblast cell growth", B. S. Kang,F. Ren B. S. Jeong, Y. W. Kwon, K. H. Baik, D. P. Norton, and S. J. Pearton, J. Vac. Sci. Technol. B 23(1), pp.57-60 (2005).
  299. "UV photoresponse of single ZnO nanowires", Y.W.Heo, B.S.Kang, L.C.Tien, D.P.Norton, F. Ren, J.R.LaRoche and S.J.Pearton, Appl. Phys. A 80, pp.497–499 (2005).
  300. "Remote sensing system for hydrogen using GaN Schottky diodes", A. EL. Kouche, J. Lin, M.E.Law, S. Kim, B.S.Kim, F. Ren and S. J.Pearton, Sensors and Actuators, B105, pp.329-333 (2005).
  301. "Fabricaion Approaches to ZnO nanowire devices", J.R.LaRoche, Y.W.Heo, B.S.Kang, L.C.Tien, Y.Kwon, D.P.Norton, B.P.Gila, F.Ren and S.J.Pearton, J. Electronic, Mat., 34, pp.404-408 (2005).
  302. "Proton irradiation of ZnO Schottky diodes", R. Khanna, K.Ip, K.K. Allums, K.Baik, C. R. Abernathy, S.J.Pearton, Y.W.Heo, D.P.Norton, F. Ren, S.Shojah-Ardalan and R. Wilkins, J. Electronic Mat., 34, pp.395-398 (2005).
  303. "AlN based dilute magnetic semiconductors", R.M.Frazier, G.T.Thaler, BP.Gila, J.Stapleton, M.E.Overberg, C.R.Abernathy, S.J.Pearton, F.Ren and S.J.Pearton, J. Electronic Mat., 34, pp.365-369 (2005).
  304. "Design of edge termination for GaN power Schottky diodes", J.R.LaRoche, F.Ren, K.W.Baik, S.J.Pearton, B.S.Shelton and B.Peres, J.electronic Mat., 34, pp.370-374 (2005).
  305. "pH measurements with single ZnO nanorods integrated with a micronchannel", B.S.Kang, F.Ren, Y.W.Heo, L.C. Tien, D.P.Norton and S.J.Pearton, App. Phys. Lett., 86, pp.112105-1-3 (2005).
  306. "Electrical characteristics of GaN implanted with Si+ at elevated temperature", Y.Irokawa, O.Fujishima, T.Kachi, S.J.Pearton, and F.Ren, App. Phys. Lett., 86, 112108-1-3 (2005).
  307. "Comparison of ZnO metal–oxide–semiconductor field effect transistor and metal–semiconductor field effect transistor structures grown on sapphire by pulsed laser deposition", C. J. Kao, Y. W. Kwon, Y. W. Heo, D.P.Norton, S. J.Pearton, F. Ren, and G.C.Chi, J. Vac. Sci. & Technol. B23, pp.1024-1028 (2005).
  308. "Low-resistance ohmic contacts to p-ZnMgO grown by pulsed-laser deposition", H.S. Yang, Y. Li, D. P. Norton, K. Ip, S. J. Pearton, S. Jang and F. Ren, App. Phys. Lett., 86, pp.192103-1-3 (2005).
  309. "Characteristics of unannealed ZnMgO/ZnO p- njunctions on bulk (100) ZnO substrates", H. Yang, Y. Li, D. P. Norton, S. J. Peartona, S. Jung, F. Ren and L. A. Boatner, App. Phys. Lett., 86, pp. 172103-1-3 (2005).
  310. "Detection of halide ions with AlGaN/GaN high electron mobility transistors", B. S. Kang, F. Ren, M. C. Kang, C. Lofton, and W. Tan, S. J. Pearton, A. Dabiran, A. Osinsky, and P. P. Chow, App. Phys. Lett., 86, pp. 173502-1-3 (2005).
  311. "Si+ Ion Implantation into GaN at Cryogenic Temperatures", Y. Irokawa, O. Fujishima, T. Kachi, S. J. Pearton, and F. Ren, Electrochem. & Solid-State Lett., 8, pp. G95-G97 (2005).
  312. "Hydrogen sensors based on Sc2O3 /AlGaN/GaN HEMTs," B.S. Kang, R. Mehandru, S. Kim, F. Ren, R.C. itch, J.K. Gillespie, N. Moser, G. Jessen, T. Jenkins, R. Dettmer, D. Via, A. Crespo, K.H. Baik, B.P. Gila, C.R. Abernathy and S.J. Pearton, Phys. Stat. Solidi C 1-4 (2005).
  313. "AlGaN/GaN HEMT structures for pressure and pH sensing," B.S. Kang, S. Kim, J. Kim, R. Mehandru, F. Ren, K. Baik, S.J. Pearton, B.P. Gila, C.R. Abernathy, C.C. Pan, G.T. Chen, J.I. Chyi, M. Sheplak, T. Nishida and S.N.G. Chu, Phys. Stat. Solidi C 1-4 (2005).
  314. "GaN enhancement mode metal-oxide semiconductor field effect transistors," Y. Irokawa, Y. Nakano, M. Ishiko, T. Kachi, J. Kim, F. Ren, B.P. Gila, A.H. Onstine, C.R. Abernathy, S.J. Pearton, C.-C. Pan, G.-T. Chen, J.-I. Chyi, Phys. Stat. Solidi C 12-16 (2005).
  315. "Activation characteristics of ion-implanted Si+ in AlGaN", Y. Irokawa, O.Fujishima, T. Kachi, S.J. Pearton and F.Ren, Appl. Phys. Lett. 86, 192102 (2005).
  316. "Comparison of Surface Passivation Layers on InGaN/GaN MQW LEDs", Hyuck Soo Yang, Sang Youn Han, M.Hlad,B. P. Gila, K. H. Baik, and S. J. Pearton, Soohwan Jang, B. S. Kang and F. Ren, J. of Semicond. Technol. & Sci., 5, pp11-15, (2005).
  317. "Electrical detection of immobilized proteins with ungated AlGaN/GaN high electron mobility transistors", B.S. Kang, F. Ren, L.Wang, C. Lofton, W. W. Tan, S. J. Pearton, A.Dabiran, A. Osinsky and P.P.Chow, Appl. Phys. Lett., 87, 023508-1-3(2005).
  318. "Capacitance pressure sensor based on GaN high electron mobility transistor-on-Si membrance", B.S.Kang, J.Kim, S. Jang, F.Ren, J.W.Johnson, R.J.Therrien, P.Rajagopal, J.C.Roberts, E.L.Piner, K.J.Linthicum, S.N.G.Chu, K.Baik, B.P.Gila, C.R.Abernathy and S.J.Pearton, Apply. Phys. Lett., 87, 0253502-1-3(2005).
  319. "Hydrogen selective sensing at room temperature with ZnO nanorods", H.T.Wang, B.S.Kang, F. Ren, L.C.Tien, P.W.Sadik, D.P.Norton, S.J.Pearton, J.Lin, Apply. Phys. Lett., 87, 0243503-1-3 (2005).
  320. "AlGaN/GaN based diodes and gateless HEMTs for gas and chemical sensing", B.S.Kang, S.Kim, F.Rem, B.P.Gila, C.R.Abernathy and S.J.Pearton, IEEE Sensors J., 5, pp.677-680 (2005).
  321. "Detection of hydrogen at room temperature with catalyst-coated multiple ZnO nanorods" H.T.Wang, B.S.Kang, F. Ren, L.C.Tien, P.W.Sadik, D.P.Norton, S.J.Pearton, J.Lin, Apply. Phys. A, 81, pp.1117-1119 (2005).
  322. "Comparison of Surface Passivation Layers on InGaN/GaN MQW LEDs’, H.S.Yang, S.Y.Han, M.Hlad, B.P.Gila, K.H.Baik, S.J.Pearton, S.W.Jang, B.S.Kang and F. Ren, J. Semicond. Technol. And Sci., 5, pp.131-135 (2005).
  323. "Transport properties of InN nanowires", C.Y.Chang, G.C.Chi, W.M.Wang, L.C.Chen, K.H.Chen, F.Ren and S.J.Pearton, Appyl. Phys. Lett., 87, pp.093112-093114(2005).
  324. "W2B-Based Rectifying Contact to n-GaN", R. Khanna, S.J.Pearton, F. Ren, I. Krachenko, C. J. Kao and G.C.Chi, Apply. Phys. Lett., 87, pp.052110-1-3 (2005).
  325. "Low Resistance Au and Au/Ni/Au Ohmic Contacts to p-ZnMgO", K. Ip, Y.Li, D.P.Norton, S.J.Pearton and F. Ren, Apply. Phys. Lett., 87, 071906 (2005).
  326. "Comparison of low-temperature GaN, SiO2, and SiNx as gate insulators on AlGaN/GaN heterostructure field-effect transistors", C. J. Kao, M. C. Chen, C. J. Tun, G. C. Chi, J. K. Sheu, W. C. Lai, M. L. Lee, F. Ren, and S.J.Pearton, J. Applied Phys., 98, 064506 –1-5 (2005).
  327. "The Effect of Thermally Induced Stress on Device Temperature Measurements by Raman Spectroscopy", Jihyun Kim, J. A. Freitas, Jr., P. B. Klein, S. Jang,, F. Ren, and S. J. Pearton, Electrochem. Solid-State Lett., 8, pp.G345-G347 (2005).
  328. "Improved oxide passivation of AlGaN/GaN high electron mobility transistors", B. P. Gila, M. Hlad, A. H. Onstine, R. Frazier, G. T. Thaler, A. Herrero, E. Lambers, C. R. Abernathy, S. J. Peartona T. Anderson, S. Jang, F. Ren, N. Moser, R. C. Fitch, and M. Freund, Appl. Phys. Lett. 87, pp.163503-1-3 (2005).
  329. "Diffusion-Controlled Selective Wet Etching of ZnCdO over ZnO", Jau-Jiun Chen, F. Ren, D. P. Norton, S. J. Pearton, A. Osinsky, J. W. Dong, and S. N. G. Chu, Electrochem. Solid State Lett., 8, pp.G359-G361 (2005).
  330. "Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN/GaN high electron mobility transistors", Hung-Ta Wang, B. S. Kang, and F. Ren, R. C. Fitch, J. K. Gillespie, N. Moser, G. Jessen, T. Jenkins, R. Dettmer, D. Via, and A. Crespo, B. P. Gila, C. R. Abernathy, and S. J. Pearton, Appl. Phys. Lett., 87, 172105-1-3(2005).
  331. "Comparison of low-temperature GaN, SiO2, and SiNx as gate insulators on AlGaN/GaN heterostructure field effect transistors", C.J. Kao, M.C.Chen, C.J.Tun, G.C. Chi, J.K. Sheu, W.C. Lai, M.L.Lee, F. Ren, and S. J.Pearton, J. Appl. Phys., 98, 064506-1-5 (2005).
  332. "Pt-coated InN nanorodes for selective detection of hydrogen at toom temperature", O. Kryliouk, H.J. Park, H.T. Hang, B.S.Kang, T.J.Anderson, F.Ren and S.J.Peaton, J. Vac. Sci& Technol. B23, 1891-1894 (2005).
  333. "Measurement of Zn0.95Cd0.05O/ZnO (0001) heterojunction band offsets by x-ray photoelectron spectroscopy", Jau-Jiun Chen, F. Ren, Yuanjie Li, D. P. Norton, S. J. Pearton, A. Osinsky, J. W. Dong, and P. P. Chow, J. F. Weaver, Appl. Phys. Lett., 87, 192106-1-3 (2005).
  334. "Efficient spin relaxation in InGaN/GaN and InGaN/GaMnN quantum wells: An obstacle to spin detection", W. M. Chena, I. A. Buyanova, K. Nishibayashi, K. Kayanuma, K. Seo, A. Murayama, Y. Oka, G. Thaler, R. Frazier, C. R. Abernathy, F. Ren, S. J. Pearton, C.C. Pan, G.-T. Chen, and J.-I. Chyi, Appl. Phys. Lett., 87, 192107-1-3 (2005).
  335. "High dose Co-60 gamma irradiation of InGaN quantum well light-emitting diodes", R. Khanna, Sang Youn Han, and S. J. Pearton, D. Schoenfeld, W. V. Schoenfeld, and F. Ren, Appl. Phys. Lett., 87, 212107 (2005).
  336. "Ti/Au n-type Ohmic contacts to bulk ZnO substrates", H. S. Yang, D. P. Norton, and S. J. Pearton, F. Ren, Appl. Phys. Lett., 87, 212106(2005).
  337. "Piezoelectric Polarization Induced Two Dimensional Electron Gases in AlGaN/GaN Heteroepitaxial Structures: Application for Micro-Pressure Sensors", S.N.G. Chu, F. Ren, S.J. Pearton, B.S. Kang, S. Kim, B.P. Gila, C.R. Abernathy, J.-I. Chyi,, W.J. Johnson, and J. Lin, Materials Science & Engineering A, 409/1-2 pp. 340-347 (2005).
  338. "Design and simulation of ZnO-based light-emitting diode structures", S. Y. Han, H. Yang, D. P. Norton, S. J. Pearton, F. Ren, A. Osinsky, J. W. Dong, B. Hertog, and P. P. Chow, J. Vac. Sci. Technol. B 23 pp. 2504-2509 (2005).
  339. "Improved Thermal Stability CrB2 Contacts on ZnO", K. Ip, R. Khanna, D. P. Norton, S.J.Pearton, F. Ren, I. Kravchenko, C.J. Cao and G.C. Chi, Japan J. Appl. Phys., 44, pp.7291-7295 (2005).
  340. "Fabrication of Hybrid n-ZnMgO/n-ZnO/p-AlGaN/p-GaN Light Emitting Diodes", H.S. Yang, S. Y. Han, Y.W. Heo, K.H. Baik, D.P. Norton, S.J. Pearton, F. Ren, A. Osinsky, J.W. Dong, B. Hertog, A.M. Dabiran, P.P. Chow, L. Chernyak, T. Steiner, C.J. Kao and G.C. Chi, Japan J. Appl. Phys., 44, pp.7296-7300(2005).
  341. "Role of Ion energy and Flux on Inductively Coupled Plasma Etch Damage in InGaN/GaN Multi Quantum Well Light Emitting Diodes", S.Y.Han, H.S. Yang, K.H. Baik, S.J. Pearton and F. Ren, Japan J. Appl. Phys., 44, pp.7234-7237 (2005).
  342. "Measurement of ZnCdO/ZnO (0001) Heterojunction Band Offsets by x-ray Photoelectron Spectroscopy", J.J. Chen, F. Ren, Y.. Li, D.P.Norton, S.J. Pearon, A. Osinsky, J.W. Dong, P.P. Chow, J.F. Weaver, Appl. Phys. Lett., 87, 192106-1-3 (2005).
  343. "Characterization of bulk GaN rectifiers for hydrogen gas sensing", Lars Voss, B.P. Gila, S.J. Pearton, Hung Ta Hang and F. Ren, J. Vac. Sci. Technol. B 23 pp. 2373-2377 (2005).
  344. "Formation of p-n homojunctions in n-ZnO bulk single crystal by diffusion from a Zn3P2 Source", S. Jang, J.J. Chen, B.S. Kang, F. Ren, D.P. Norton, S.J. Pearton, J. Lopata and W.S. Hobson, Appl. Phys. Lett. 87, pp. 222113-1-3 (2005).
  345. "W2B-Based Ohmic Contact to n-GaN", R. Khanna, S.J. Pearton, F. Ren, I. Krachenko, C. J. Kao and G.C. Chi, Apply. Surface Sci., 252, pp.1826-1832 (2005).
  346. "Hydrogen sensing at room temperature with Pt-coated ZnO thin films and nanorods", L. C. Tien, P. W. Sadik, D. P. Norton, L. F. Voss, S. J. Pearton, H. T. Wang, B. S. Kang, F. Ren, J. Jun and J. Lin, Appl. Phys. Lett., 87, pp.222106 (2005).
  347. "Comparison of Interface State Density Characterization Methids for SiO2/4H-SiC MOS Diodes", J. R. LaRoche, J.Kim, J.W.Johnson, B. Luo, B.S.Kang, R.Mehandru, Y.Irokawa, S.J.Pearton, G. Chung and F. Ren, Electrochem. & Colid Stare Lett. 7, G21-G24 (2004).
  348. "GaN/AlGaN HEMTs Grown by Hydride Vapor Phase Epitaxy on AlN/SiC Substrates", J.R. LoRoche, B. Luo, F. Ren, K.H.Baik, D. Stodilka, B. Gila, C. R. Abernathy, S.J.Pearton, A. Usikov, D. Tsvetkov, V.Soukhoveev, G.Gainer, A.Rechnikov, V.Dmitriev, G.T.Chen, C.C.Pan, and J.I. Chyi, Solid State Electronics, 48, pp.193-196 (2004).
  349. "RF Performance of HVPE-Grwon AlGaN/GaN HEMT", M.A.Mastro, D. Tsvetkov, V.Soukhoveev, A. Usikov, V.Dmitriev, B. Luo, F. Ren, K.H.Baik and S.J.Pearton, Solid State Electronics, 48, pp.179-182 (2004).
  350. "Thermal Stability of Wsix Schottky Contacts on n-type 4H-SiC", J. Kim, F. Ren, A.G.Baca, G.Y.Chung and S. J.Pearton, Solid State Electronics, 48, pp.175-178 (2004).
  351. "2.6 A, 0.69 MW cm-2 Single-Chip Bulk GaN p-I-n Rectifier", Y. Irokawa, B. Luo, B.S.Kang, J. Kim, J.R.LaRoche, F. Ren, K.H.Baik, S.J.Pearton, C.C.Pan, G.T.Chen, J.I.Chyi, S.S.Park and Y.J.Park, Solid State Electronics, 48, pp.359-361 (2004).
  352. "Temperature Dependence of pnp GaN/InGaN HBT Performance", K.P.Lee, A.M.Dabiran, P.P.Chow, A. Osinsky, S.J.Pearton, and F. Ren, Solid State Electronics, 48, pp.37-41 (2004).
  353. "AlGaN/GaN HEMT Based Liquid Sensors", B. Mehandru, B. Luo, B.S.Kang, J. Kim, F. Ren, S.J.Pearton, C.C.Pan, G.T.Chen and J.I.Chyi, Solid State Electronics, 48, pp.351-353 (2004).
  354. "Small Signal Measurement of Sc2O3 AlGaN/GaN MOSHEMT", B. Luo, R. Mehandru, B.S.Kang, J.Kim, F.Ren, S.P.Gila, A.H.Onstine, C.R.Abernathy, S.J.Pearton, D.Gotthold, R. Birkhahn, B.Peres, R. Fitch, J.K.Gillespie, T. Jenkins, J.Sewell, D. Via, and A. Crespo, Solid State Electronics, 48, pp.355-358 (2004).
  355. "Comparison of Stability of WSix/SiC and Ni/SiC Schottky Rectifiers to High Dose Gamma-Rey Irradiation", J. Kim, F. Ren, G.Y.Chung, M.F.MacMillan, A.G.Baca, R.D.Briggs, D. Schoenfeld, S.J.Pearton, App. Phys. Lett., 84, pp. 371-373 (2004).
  356. "DC Characteristics of AlGaN/GaN HFETs on Free-Standing GaN Substrates," Y. Irokawa, B. Luo, F. Ren, C.C. Pan, G.T. Chen, J. Chyi, S. Park, Y. Park and S.J. Pearton, Electrochem. Solid-State Lett. 7, G8 (2004).
  357. "Electrical and Optical Properties of Hydrogen Plasma Treated n-AlGaN Films Grown by Hydride VPE," A.Y. Colyakov, N.B. Smirnov, A.V. Govorkov, N.V. Pashkova, A. Shlensky, K`.H. Baik, S.J. Pearton, B. Luo, F. Ren and J.M. Zawada, J. Vac. Sci. Technol. B22, 77 (2004).
  358. "Carrier Concentration Dependence of Ti/Al/Pt/Au Contact Resistance on n-Type ZnO," K. Ip, Y. Heo, K. Baik, D.P. Norton, S.J. Pearton and F. Ren, Appl. Phys. Lett. 84, 544 (2004).
  359. "Ferromagnetism in GaN and SiC Doped with Transition Metals," S.J. Pearton, Y.D. Park, C.R. Abernathy, M Overberg, G. Thaler, J. Kim, F. Ren, J.M. Zawada and R.G. Wilson, Thin Solid Films 447-448, 493 (2004).
  360. "Si+ Ion Implanted MPS Bulk GaN Diodes," Y. Irokawa, J. Kim, F. Ren, K. Baik, B. Gila, C.R. Abernathy, S.J. Pearton, C. Pan, G. Chen, J.I. Chyi and S.S. Park, Solid-State Electron. 48, 827 (2004).
  361. "Gateless AlGaN/GaN HEMT Response to Block Co-Polymers," B. Kang, G. Couche, R.S. Duran, Y. Gannon, S.J. Pearton and F. Ren, Solid-State Electron 48, 851 (2004).
  362. "Wide Bandgap GaN-Based Semiconductors for Spintronics," S.J. Pearton, C.R. Abernathy, G. Thaler, R.M. Frazier, D.P. Norton, F. Ren, Y.D. Park, J.M. Zawada, I.A. Biyanova, W.M. Chen and A.F. Hebard, J. Phys. Condensed Matter 16, R209 (2004).
  363. "AlGaN/GaN MOS Diode-Based Hydrogen Gas Sensor," B.S. Kang, F. Ren, B.P. Gila, C.R. Abernathy and S.J. Pearton, Appl. Phys. Lett. 84 1123 (2004).
  364. "Contact to p-Type ZnMgO", S. Kim, B.S.Kang, F. Ren, Y.W.Heo, K. IP, D.P.Norton, and S. J.Pearton, Appl. Phys. Lett., 84, 1904-1906 (2004).
  365. "Sensitivity of Pt/Zn Schottky Diode Characteristics to Hydrogen", S.Kim, B.S.Kang, F. Ren, K.Ip, Y.W.Heo, D.P.Norton, and S. J.Pearton, Appl. Phys. Lett., 84, pp.1968-1700(2004).
  366. "Specific Contact Resistance of Ti/Al/Pt/Au Ohmic Contacts to Phosphorus-Doped ZnO Thin Films", K.Ip, Y.W.Heo, K.H.Bik, D.P.Norton, S.J.Pearton, and F. Ren, J. Vac. Sci. Technol. B22, 171-174(2004).
  367. "4H-SiC Schottky Diode Array with 430 A Forward Current", J. Kim, K. H. Baik, B.S.Kang, Y.Irokawa, F. Ren, S.J.Pearton and G.Y.Chung, Electrochem. & Solid State Lett., 7, G124-G126(2004).
  368. "MgO/p-GaN Enhancement Mode Metal Oxide Semiconductor Field-Effect Transistors", Y. Irokawa, Y. Nakano, M. Ishiko, T. Kachi, J. Kim, F. Ren, C.C.Pan, G.T.Chen, J.I.Chyi, Appl. Phys. Lett., 84, pp.2919-2921(2004).
  369. "Temperatrue Dependence Characteristics of Pt Schottky Contacts on n-Type ZnO", K.Ip, Y.W.Heo, K.H.Baik, D.P.Norton S.J.Pearton, S. Kim, J.R.LaRoche, and F.Ren, Appl. Phys. Lett., 84, pp.2835-2837(2004).
  370. "On The Origin of Spin Loss in GaMnN/InGaN Light Emitting Diodes", I..A.Buyanova, M. Izadifard, W.M.Chen, J. Kim, F.Ren, G.Thaler, C.R.Abernathy, S.J.Pearton, C.C.Pan, G.T.Chen, J.I.Chyi, andJ.M.Zavada, "Appl. Phys. Lett., 84, pp.2599-2601(2004).
  371. "Effects of Hydrogen Plasma Treatment on Electrical Properties of p-AlGaN", A.Y.Polyakov, N.B.Smimov, A.V.Govokov, K.H.Baik, S.J.Pearton, B.Luo, F.Ren and J.M.Zavada, J. Vac. Sci. Technl. B22, pp. 771-775(2004).
  372. "Temperature Dependence Characteristics of Bulk GaN Schottky Rectifiers on Free-Standing GaN Substrates", B. S. Kang, F. Ren, Y. Irokawa, K.W. Baik, S.J.Pearton, C.C.Pan, G.T.Chen, J..Chyi, H.J.Ko and H.Y.Yee, J. Vac. Sci. Technol. B22, 710-714 (2004).
  373. "Electrical And Luminescent Properties And The Spectra of Deep Centers in GaMnN/InGaN Light Emitting Diodes", J. Electron. Mat., 33, pp.241-247 (2004).
  374. "Hydrogen-induced reversible changes in drain current in Sc2O3 AlGaN/GaN high electron mobility transistors", B. S. Kang, R. Mehandru, S. Kim, and F. Ren, R. C. Fitch, J. K. Gillespie, N. Moser, G. Jessen, T. Jenkins, R. Dettmer, D. Via, and A., B. P. Gila, C. R. Abernathy, and S. J. Pearton, Appl. Phys. Lett., 84 pp.4635-4637 (2004).
  375. "ZnO/cubic (Mg,Zn)O Radial Nanowire Heterostructures", W.Y.Heo, M.Kaufman, K. Pruessner, K.N.Siebein, D.P.Norton and F. Ren, Appl. Phys. A: Materials Sci. & Processing, 80, pp.263-266 (2004).
  376. "Lateral Schottky GaN Rectifiers Formed by Si+ Ion Implantation", Y. Irokawa, J. Kim, F. Ren, K.H.Baik, B.P.Gila, C.R. Abernathy, S.J.Pearton, C.C.Pan,G.T.Chen and J.I.Chyi, J. Electron, Matl., 33, pp.426-430(2004).
  377. "SiC Via Holes bu Laser Drilling", S. Kim, B.S.Bang, F.Ren, J.Dentremont, W.Blumenfeld,T.Cordock and S.J.Pearton, J.Electron. Mat., 33, pp.477-480 (2004).
  378. "Optical And Electrical Characterization of (Ga,Mn)N/InGaN Multiquantum Well Light-Emitting Diodes", I.A.Buyanova, M.Izadifard, L.Storasta,W.M.Chen,J.Kim, F.Ren, G. Thaler, C.R.Abernathy, S.J.Pearton, C.C.Pan,G.T.Chen, J.I.Chyi and J.M.Zavada, J.Electron. Mat., 33, pp.467-471 (2004).
  379. "Improved Pt/Au And W/Pt/Au Schottky Contacts on n-Type ZnO Using Ozone Cleaning", J. Appl. Phys., Lett., K.Ip, B.P.Gila, A.H.Onstine, E.S.Lambers, Y.W.Heo, K.H.Baik, S.Kim, J.R.LaRoche and F.Ren, 84. pp.5133-5135 (2004).
  380. "High -Rate Laser Ablation For Through-Wafer Via Holes in SiC", S. Kim, B. S. Kang, F. Ren, J. d’Entremont, W. Blumenfeld, T. Cordock, and S. J. Pearton, J. Semicond. Technol. Sci., 4, 217-222 (2004).
  381. "Detection of C2H4 Using Wide-Bandgap Semiconductor Sensors AlGaN/GaN MOS Diodes and Bulk ZnO Schottky Rectifiers", B.S.Kang, S.Kim, F.Ren, K.Ip, Y.W.Hoe, G.Gila, C.R.Abernathy, D.P.Norton, and S.J.Pearton, J. electrochem. Soc., 151. pp.G468-G471 (2004).
  382. "Characteristics of Thin-Film p-ZnMgO/n-ITO Heterohunctions on Glass Substrates", Elecrochem. And Solid-State Lett., 7, pp.G145-G147 (2004).
  383. "Remote Sensing System for Hydrogen Using GaN Schottky Diodes", A.E..Kouche, J. Lin, M.E.Law, S. Kim, B.S.Kim, F. Ren and S.J.Pearton, Sensor and Acutuators, B (2004).
  384. "Effect of High –Dose 40 MeV Proton Irradiation on the Electroluminescent and Electrical Performance of InGaN Light Emitting Diodes", R. Khanna, K.K.Allums, C. R. Abernathy, S. J. Pearton, J. Kim, F. Ren, R. Dwivedi, T.N.Fogarty and Wikins, Appl. Phys. Lett., 85, pp.3131-3133(2004).
  385. "Pt/ZnO Nano-Wire Schottky Diodes", Y.W. Heo, L.C.Tien, D.P.Norton, S.J.Pearton, B.S.Kang, F.Ren and J.R.LaRoche, Appl. Phys. Lett., 85, pp.3107-3109 (2004).
  386. "Hydrogen-Induced Reversible Changes in Drain Current in Sc2O3/AlGaN/GaN High Electron Mobility Transistors", B.S.Kang, R. Mehandru, S.Kim, F.Ren, R.C.Fitch, J.K.Gillespie, N.Moser, G.Jessen, T.Jenkins, R. Dettmer, D.Via, A.Crespo, B.P.Gila, C.R.Abernathy and S.J.Pearton, Appl. Phys. Lett., 84, pp.4635-4637 (2004).
  387. "Pressure-Induced Changes in The Conductivity of AlGGaN/GaN High-Electron Mobility Transistor Membranes", B.S.Kang, S.Kim, F.Ren, J.W.Johnson, R.J.Therrien, P.Rajagopal, J.C.Roberts, E.L.Piner and K. J. Linthicum, S.N.G.Chu, K.Baik, B.P.Gila, C.R.Abernathy, and S.J.Pearton, Appl. Phys. Lett., 85, pp.2962-2964 (2004).
  388. "Depletion-Mode Nano-Wire Field Effect Transistor", Y.W. Heo, L.C.Tien, Y. Kwon, D.P.Norton, S.J.Pearton, B.S.Kang, and F.Ren, Appl. Phys. Lett., 85, pp.2274-2276 (2004).
  389. "Effects of High Dose Proton Irradiation on The Electrical Performance of ZnO Schottky Diodes", R.Khanna, K.Ip, K.K.Allum, K.Baik, C.R.Abernathy, S.J.Pearton, Y.W.Heo, D.P.Norton, F.Ren, R.Wivedi, T.N.Fogarty and R.Wikins, Phys. Stat. Sol. 210, pp.R79-R82 (2004).
  390. "Optical And Electrical Characterization of (Ga,Mn)N/InGaN Multiquantum Well Light-Emitting Diodes", I.A.Buyanova, M.Izadifard, L.Storasta, W.M.Chen, j. Kim, F. Ren., G. Thaler, C.R.Abernathy, S.J.Pearton, C.C.Pan, G.T.Chen, J.I.Chyi an dJ.M.Zavada, J. Electronic Materials, 33, pp.467-471 (2004).
  391. "SiC Via Holes by Laser Drilling", S. Kim, B.S.Kang, F. Ren, J., D’entremont, E.Blumenfeld, T. cordock and S.J.Pearton, J. Electronic Materials, 33, pp.477-480 (2004).
  392. "Lateral Schottky GaN Rectifiers Formed By Si+ Ion Implantation", Y. Irokawa, J. Kim, F. Ren, K.H. Baik, B.P. Gila, C. R. Abernathy, S.J.Pearton, C.C.Pan, G.T.Chen and J.I. Chyi, J. Electronic Materials, 33, pp.426-430 (2004).
  393. "Enhanced Functionality in GaN and SiC Devices By Using Novel Processing", S.J.Pearton, C.R.Abernathy, B.P.Gila, F.Ren, J.M.Zavada and Y.D.Park, Solid State Electronics, 48, pp.1965-1974 (2004).
  394. "Effect of Deposition Conditions and Annealing on W Schottky Contacts on n-GaN", R. Mehandru, S. Kang, S.Kim, F. Ren, I. Kravchenko, W.Lewis, and S.J.Pearton, Materials Sci. in Semicond. Processing, 7 pp.95-98 (2004).
  395. "Electrical Transport Properties of Single ZnO Nano-Rodes", Y.W. Heo, L.C.Tien, D.P.Norton, B.S.Kang, F.Ren B. Gila, and S.J.Pearton, Appl. Phys. Lett., 85, pp. 2002-2004 (2004).
  396. "Thermal Degradation of Electrical Properties And Morphology of Bulk Single-Crystal ZnO Surfaces", R. Khanna, K. Ip, Y.E. Heo, D.P. Norton, S.J.Pearton and F.Ren, Appyl. Phys. Lett., 85, pp.3468-3470 (2004).
  397. "Novel Insulators for Gate Dielectrics and Surface Passivation of GaN-Based Electronic Devices", B.P.Gila, F.Ren and C.R.Abernathy, Materials Sicnece & Eng., 44, pp. 151-184 (2004).
  398. "Optical Study of Spin Injection Dynamics in InGaN/GaN Quantum Wells with GaMnN Injection Layers", I.A.Buyanova, J.P.Bergman, M.W.Chen, G.Thaler, R.Frazier, C.R.Abernathy, S.J.Pearton, J.Kim, F.Ren, F.V.Kyrychenko, C.J.Stanton, C.C.Pan, G.T.Chen, J.I.Chyi andJ.M.Zavada, J Vac. Sci. Technol. B22, pp. 2668-2672 (2004).
  399. "ZnO Nanowire Growth and Devices", Y.W.Heo, D.P.Norton, L.C.Tien, Y.Kwon, B.S.Kang, F.Ren, S.J.Perton and J.R.LaRoche, Mat. Sci & Eng., R47, pp.1-47 (2004).
  400. "Stability of SiC Schottky Rectifiers to Rapid Thermal Annealing", K. Ip, S. Nigam, K. H. Baik, F. Ren, G. Y. Chung, B. P. Gila, and S. J. Pearton, J. Electrochem. Soc., 150, pp. G293-G296 (2003).
  401. "Effect of Contact Geometry on 4H-SiC Rectifiers with Junction termination Extension", S. Nigam, J. Kim, F. Ren, G. Chung, S. J. Pearton, J. R. William, K. Shenai, and P. Nerudeck, Soild State Electronics, 47, pp.57-60 (2003).
  402. "Influence of Edge Termination Geometry on Performance of 4H-SiC p-i-n Rectifiers", S. Nigam, J. Kim, B. Luo, F. Ren, G. Chung, S. J. Pearton J. R. William, K. Shenai, and P. Nerudeck, Soild State Electronics, 47, pp.61-64 (2003).
  403. "Wide Band Gap Ferromagnetic Semiconductors And Oxides", S. J. Pearton, C. R.Abernathy, M. E. Overberg, G. T. Thaler, D. P. Nrton, N. Theodorpoulou, A. F. Hebard, Y. D. Park, F. Ren, J. Kim and L. A. Boatner, J. Appl. Phy., 1, pp.1-13 (2003).
  404. "Hydrogen Incorporation And Diffusivity in Plasma-Exposed Bulk ZnO", K. Ip, M. E. Overberg, Y. H. Heo, D. P. Norton, S. J. Pearton, C. E. Stutz, B. Luo, F. Ren, D. C. Look, J. M. Zavada, Appl. Phys. Lett., 82, pp.385-387 (2003).
  405. "Room Temperature Ferromagnetism in GaMnN and GaMnP", S. J. Pearton, M. E. Overberg, G. T. Thaler, C. R. Abernathy, J. Kim, F. Ren, N. Theodoropoulou, A. F. Hebard, an Y. D. Park, Phys. Stat. Sol., 195, pp. 222-227 (2003).
  406. "Electrical Characteristics of Proton-Irradiated Sc2O3 Passivted AlGaN/GaN High Electron Mobiity Transistors", B. Luo, J. Kim, F. Ren, J. K. Gillespie, R. C. Fitch, J. Sewell, R. Dettmer, G. D. Via, A. Crespo, T. J. Jenkins, B. P. Gila, A. H. Onstine, C. R. Abernathy, S.J.Pearton, R. Dwived, T. N. Fogarty and R. Wilkins, Appl. Phys. Lett., 82, pp.1428-1430 (2003).
  407. "Reversible Barrier Height Changes in Hydrogen-Sensitive Pd/GaN and Pt/GaN Diodes", J. Kim. F. Ren, B. P. Gila, C. R. Abernathy, and S. J. Pearton, Appl. Phys. Lett., 82, 739-741 (2003).
  408. "Vertical And Lateral Mobillities in n(Ga,Mn)N", J. Kim, F. Ren, G. T. Thaler, R. Frazier, C. R. Abernathy, S. J. Pearton, J. M. Zavada and R. G. Wilson, App. Phys. Lett., 82, pp. 1565-1567 (2003).
  409. "Thermal Simulation of High Power Bulk GaN Rectifiers", R. Mehandru, S. Kim, J. Kim, F. Ren, J. R. Lothina, S. J. Pearton, S. S. Park, Y. J. Park, Soild State Electronics, 47, pp.1037-1043 (2003).
  410. "Effect of Base Structure on Performance of GaN-Based Heterojunction Bipolar Transistors", K. P. Lee, F. Ren, S. J. Pearton, A. M. Dabiran, and P.P. Chow, Soild State Electronics, 47, pp.1031-1036 (2003).
  411. "Hydride Vapor Phase Epitaxy-Grown AlGaN/GaN High Electron Mobility Transistors", M. A. Mastro, D. Tsvetkov, V. Soukhoveev, A. Uskiov, V. Dmitriev, B. Luo, F. Ren, K.H. Basi, and S. J. Pearton, Soild State Electronics, 47, pp.1075-1079(2003).
  412. "Design, of Junction Termination Structure for GaN Schottky Power Rectifiers", K. H. Baik, Y. Irokawa, F. Ren, S. J. Pearton, S.S.Park, and Y. C. Park, Soild State Electronics, 47, pp.975-979 (2003).
  413. "Influence of Layer Doping and Thickness on Predicted Performance of NPN AlGaN/GaN HBTs", K. P. Lee, A. Dabiran, P.P. Chow, S. J. Pearton and F. Ren, Soild State Electronics, 47, pp.967-974(2003).
  414. "Proton Irradiation of MgO- or Sc2O3 Passivated AlGaN/GaN High Electron Mobility Transistors", B. Luo, F. Ren, K.K. Allums, B.P. Gila, A.H.Onstine, C. R. Abernathy, S.J.Pearton, R. Dwivedi, T.N.Fogarty, R.Wilkins, R.C.Fitch, J.K. Gillespie, T.J.Jenkins, R.Dettmer, J.Sewell, G.D.Via, A.Crespo, A.G.Baca, and R.J.Shul, Soild State Electronics, 47, pp.1015-1020 (2003).
  415. "Hydrogen-Sensitive GaN Schottky Diodes", J. Kim, B. P. Gila, G.Y. Chung, C. R. Abernathy, S.J.Pearton, and F. Ren, Soild State Electronics, 47, pp.1069-1073 (2003).
  416. "Simulation of InGaN-Based Heterojunction Bipolar Transistors", K.P. Lee, F. Ren, S.J.Pearton, A.M. Dabiran, P.P.Chow, Soild State Electronics, 47, pp.1009-1014 (2003).
  417. "AlGaN/GaN Metal-Oxide-Semiconductor High Electon Mobility Transistors Using Sc2O3 As The Gate Oxide And Surface Passivation", R. Mehandru, B. Luo, J. Kim, F. Ren, B.P. Gila, A.H.Onstine, C. R. Abernathy, S.J.Pearton, D. Gotthold, B. Birkhahn, B. Peres, R..C.Fitch, J.K. Gillespie, T.J.Jenkins, J.Sewell, G.D.Via, and A. Crespo, Appl. Phy. Lett., 82, pp.2530-2532 (2003).
  418. "GaN and Other Materials for Semiconductor Spintronics", S.J.Pearton, Y.D.Park, C.R.Abernathy, M.E.Overberg, G.T.Thaler, J.Kim and F. Ren, J. Electronic Mat., 32, pp.288-297 (2003).
  419. "Thermal Stability of Wsiz and W Schottky Contacts on n-GaN", J. Kim, F. Ren, A.G.Baca and S. J.Pearton, App. Phys. Lett., 82, pp.3263-3265 (2003).
  420. "High Temperature Thermal Stability of Au/Ti/Wsix Schottky Contacts on n-type 4H-SiC", J. Kim, F. Ren, A.G.Baca, R. D. Briggs and S.J.Pearton, Solid State Electronics, 47, pp.1345-1350 (2003).
  421. "Improved Morphology for Ohmic Contacts to AlGaN/GaN High Electron Mobility Transistors using Wsix or W based Metallization", B. Luo, F. Ren, R. C. Fitch, J., J.K. Gillespie, T.J.Jenkins, J.Sewell, G.D.Via, and A. Crespo, A.G.Baca, R.D.Briggs, D. Gotthold, R. Birkhahn, B.Peres and S. J. Pearton, Appl. Phys. Lett., 82, pp.3910-3912 (2003).
  422. "Hydrogen Plasma Treatment Effects on Electrical And Optical Properties of n-ZnO", A.Y. Polyakov, N.B. Smirnov, and A.V.Govorkov, K. Ip, M. E. Overberg, Y.W. Heo, D.P. Norton, S. J. Pearton B. Luo, F. Ren, and J.M. Zavada, J. Appl. Phys., 94, pp.400-406 (2003).
  423. "High Three Terminal Breakdwon Voltage And Output Power of Sc2O3 Passivated AlGaN/GaN High Electron Mobility Transistors", B. Luo, R, Mehandru, J. Kim, F. Ren, B. P. Gila, A.H. Onstine, C.R.Abernathy, S.J.Pearton, D.Gotthold, R.Birkhahn, B.Peres, R.C.Fitch, N.Moser, J.K.Gillespie, T.Jenkins, J.Swell, D.Via and A.Crespo, Electron. Lett., 39, pp.809-810 (2003).
  424. "Mixing Characteristics of InGaAs Metal-Semiconductor-Metal Photodetectors with Schottky Enhancement Layers", H. Shen, K. Aliberti, B. Stann, and P. Newman, R. Mehandru and F. Ren, Appyl Phys. Lett., 82, pp.3814-3816 (2003).
  425. "Fabrication And Characterics of High Speed Implant-Confined Index-Guided Lateral-Curent 850 nm Vertical Cavity Furface-Emitting Lasers", G. Dang, R. Mehandru, B. Luo, F. Ren, W.S.Hobson, J. Lapata, M. Tayahi, S.N.G.Chu, S.J.Pearton, W.Chang, and H. Shen, J. Lightwave Technol. 21, pp.1020-1031 (2003).
  426. "Annealing Temperature Dependence of Contact Resistance and Stability for Ti/Al/Pt/Au Ohmic Contacts to Bulk n-ZnO," K. Ip, K. Baik, Y. Heo, D. Norton, S.J. Pearton, J. LaRoche, B. Luo, F. Ren and J.M. Zawada, J. Vac. Sci. Technol. B21, 2378 (2003).
  427. "Gate Breakdown Characteristics of MgO/GaN MOSFETs", H. Cho, K.P.Lee, B.P.Gila, C. R. Abernathy, S.J.Pearton and F. Ren, Soild State Electronics, 47, pp.1597-1600 (2003).
  428. "Role of Devoce Area, Mesa Length And Metal Overlap Distance on Breakdown Voltage of 4H-SiC p-I-n Rectifiers", S. Nigam, J. Hyun, B. Luo, F. Ren, G.Y. Chung, K. Shenai, P.G.Neudeck, S.J.Pearton and J.R.Williams, Solid State Electronics 47, pp.1461-1464 (2003).
  429. "Temperature Dependence of MgO/GaN MOSFET Performance", H. Cho, K.P. Lee, B.P.Gila, C. R. Abernathy, S.J.Pearton, and F. Ren, Solid State Electronics, 47, pp.1601-1604 (2003).
  430. "Comparison of Pt/GaN and Pt/4H-SiC gas Sensor", J. Kim, B.P. Gila, C.R.Abernathy, G.Y.Chung, F. Ren,a nd S.J.Pearton, 47, pp.1487-1490 (2003).
  431. "Temperature Dependence of Forward Current Characteristics of GaN Junction and Schottky Rectifiers", K.H.Baik, Y. Irokawa, F. Ren, S.J.Pearton, S.S. Park and Y.J.Park, Solid State Electronics, 47, pp.1533-1538 (2003).
  432. "Hydrogen Plasma Passivation Effects on Properties of p-GaN", A.Y. Polyakov, N.B. Smirnov, and A.V.Govorkov, K. H. Baik, S. J. Pearton B. Luo, F. Ren, and J.M. Zavada, J. Appl. Phys., 94, pp.3960-3965 (2003).
  433. "Improved dc and power performance of AlGAN/GaN High Electron Mobility Transistors with Sc2O3 Gate Dielectric or Surafce Passivation", B. Luo, R. Mehandru, J. Kim, F.Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S.J.Pearton, J. Kim, D. Gotthold, R. Birkhahn, B. Peres, R. C. Fitch, N. Moser, J. K. Gillespie, G. H. Jessen, T. J. Jenkins, M. J. Yannuzi, G. D. Via, and A. Crespo, Solid State Electronics, 47, pp.1781-1786 (2003).
  434. "Uniformity of dc and rf Performance of MBE-Grown AlGAN/GaN HEMTS on HVPE-Grwon Buffers", J. K. Gillespie, R. C. Fitch, N. Moser, T. J. Jenkins, J. Sewell, G. D. Via, A. Crespo, A. Dabiran, P.P. Chow, A. Osinsky, M. A. Mastro, D. Tsvetkov, V. Soukhoveev, A. Usikov, V. Dmitriev, B. Luo, S.J.Pearton, and F.Ren, Solid State Electronics, 47, pp.1859-1862 (2003).
  435. "160-A Bulk GaN Schottky Diode Array", K. H. Baik, Y. Irokawa, J. Kim, J. R. LaRoche, F. Ren, S.S. Park, Y.J.Park, and S.J.Pearton, Appl. Phys. Lett., 83, 3192-3194 (2003).
  436. "Deep Traps in Unpassivated and Sc2O3 Passivated AlGaN/GaN High Electron Mobility Transistors", A.Y. Polyakov, N.B. Smirnov, and A.V.Govorkov, V.N. Danilin, T.A.Zhukova, B. Luo, F.Ren, B.P.Gila, A.H.Onstine, C.R.Abernathy, and S. J.Pearton, Appl. Phys. Lett., 83, 2608-2610 (2003).
  437. "Hydrogen Incorporation, Difussion and Evolution in Bulk ZnO", K.Ip, M.E. Overberg, Y.W. Heo, D.P. Norton, S. J.Pearton, C.E.Stutz, S.O.Kucheyer, C. Jagadish, J.S.Williams, B. Luo, F. Ren, D.C.Look, and J.M. Zavada, Solid State Electronics, 47, pp.2255-2259 (2003).
  438. "ICP Dry Etching of ZnO and Effect of Hydrogen", K.Ip, M.E. Overberg, K. W. Baik, R. G. Wilson, S.O. Kucheyev, J.S. Williams, C. Jagadish, F. Ren, Y.W. Heo, D.P. Norton, J.M. Zavada, and S. J.Pearton, Solid State Electronics, 47, pp.2289-2294 (2003).
  439. "Effects of Sureface Treatments on Isolation Current in AlGaN/GaN High electron Mobility Transistors", N.A. Moser, J.K. Gillespie, G.D.Via, A. Crespo, M.Y. Yannuzzi, G.H. Jessen R.C. Fitch, B. Luo, F. Ren, B.P. Gila, A.H. Onstine, C.R. Abernathy, S.J. Pearton, Appl. Phys. Lett. 83, pp.4178-4180 (2003).
  440. "Activation Kinetics of Implanted Si+ in GaN and Application to Fabricating Lateral Schottky Diodes", Y. Irokawa, J. Kim, F. Ren, K.H. Baik, B.P. Gila, C.R. Abernathy, S.J. Pearton, C.C. Apn, G.T. Chen, and J.I. Chyi, App. Phys. Lett., 83, pp.4987-4989 (2003).
  441. "Design of Junction Termination Structures for GaN Schottky Power Rectifiers", K. H. Baik, Y. Irokawa, F. Ren, S. J. Pearton, S. S. Park and Y. J. Park, Solid State Electronics, 47, pp.957-979 (2003).
  442. "Effect of External Strain of on The Conductivity of AlGaN/GaN High Electron Mobility Transistors", B.S.Kang, S.Kim, J. Kim, F.Ren, K.Biak, S.J. Pearton, B.P. Gila, C.R. Avernathy, C.C.P an, G.T. Chen, J.I. Chyi, V. Chandrasekaran, M. Sheplak, T. Nishida, and S.N.G. Chu, App. Phys. Let., 83, pp.4845-4847 (2003).
  443. "Annealing Temperature Dependence of Contact resistance And Stability for Ti/Al/Pt/Au Ohmic Contacts to Bulk n-ZnO", K.Ip, K.H. Baik, Y.W. Heo, D.P. Norton, S.J. Pearton, J.R. LaRoche, B. Luo, F. Ren, and J.M. Zavada, J. Vac. Sci. & Technol B, 21, pp.2378-2381 (2003).
  444. "Magnesium Oxide Gate Dilelectric Grwon on GaN Using An Electron Cyclotron Resonance Plasma", B.P.Gila, A.H.Onstine, J.Kim, K.K.Allums, F.Ren, C.R.Abernathy and S.J.Pearton, J. Vac. Sci. & Technol B, 21, pp.2368-2370 (2003).
  445. "Effects of Sureface Treatments on Isolation Current in AlGaN/GaN High electron Mobility Transistors", N.A.Moser, J.K.Gillespie, G.D.Via, A.Crespo, M.Y.Yannuzzi, G.H.Jessen R.C.Fitch, B.Luo, F.Ren, B.P.Gila, A.H.Onstine, C.R.Abernathy, S.J.Pearton, Appl. Phys. Lett. 83, pp.4178-4180 (2003).
  446. "GaN and Other Materials for Semiconductor Spintronics", S. J. Pearton, Y. D. Park, C. R. Abernathy, M. E. Overberg, G T. Thaler, J. Kim, and F. Ren, J. Electron Mat.,32, pp. 288-297 (2003).
  447. "Influence of 60Co gamma-rays on dc Performance of AlGaN/GaN High Electron Mobility Transistors", B. Luo, J. W. Johnson, F. Ren, K. K. Allums, C. R. Abernathy, S. J. Pearon, A. M. Dabiran, A. M. Wowchack, C. J. Polley, P. P. Chow, D. Schoenfeld, and A. G. Baca, Appl. Phys. Lett., 80, pp. 604-606 (2002).
  448. "Influence of SiO2 PECVD Layers on p-GaN Rectifier", K. H. Baik, B. Luo, S. J. Pearton, F. Ren, Solid State Electronics, 46, pp.803-806 (2002).
  449. "1.6 A GaN Schottky Rectifiers on Bulk GaN Substrates", J. W. Johnson, B. Luo, F. Ren, D. Palmer, S. J. Pearton, S. S. Park, Y. J. Park, and J. I. Chyi, Solid State Electronics, 46, pp.911-913 (2002).
  450. "GaN pnp bipolar Junction Transistors Operated to 250 °C", A. P. Zhang, G. Dang, F. Ren, J. Han, C. Monier, A. G. BaCa, X. A. Cao, H. Cho, C. R. Abernahty, S. J. Pearton, Solid State Electronics, 46, pp.933-936 (2002).
  451. "Effect of Plasma Enhanced Chemical Vapor Deposition of SiNx on n-GaN Schottky Rectifiers", B. Luo, J. W. Johnson, F. Ren, F. Ren, K. W. Baik, S. J. Pearton, Solid State Electronics, 46, pp.705-710 (2002).
  452. "Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing", A. Y. Polyakov, N. B. Smimov, A. V. Govorkov, J. Kim, B. Luo, R. Mehandru, F. Ren, K. P. Lee, S. J. Pearton, A. V. Osinsky, an P. E. Norris, J. Apply. Phys., 91, pp.5203-5207(2002).
  453. "Comparison of AlGaN/GaN High Electron Mobility Transistors Grown on AlN/SiC Templates or Sapphire", J. W. Johnson, J. Han, A. G. Baca, R. D. Brigg, R. J. Shul, J. R. Wendt, C. Monier, F. Ren, B. Luo, S. N. G. Chu, D. Tsvetkov, V. Dmitriev, S. J. Pearton, Solid State Electronics, 46, pp.513-523 (2002).
  454. "Surface Passivation of AlGaN.GaN HEMTs Using MBE-Grown MgO or Sc2O3", B. Luo, J. W. Johnson, B. P. Gila, A. Onstine, C. R. Abernathy, F. Ren, S. J. Pearton, A. G. Baca, A. M. Dabiran, A. M. Wowchack, P. P. Chow, Solid State Electronics, 46, pp.467-476 (2002).
  455. "High breakdown M-I-M Structures on Bulk AlN", B. Luo, J. W. Johnson, O. Kryliouk, F. Ren, S. J. Pearton, S. N. G. Chu, A. E. Nikolaev, Y. V. Melnik, V. A. Dmitriev, T. J. Anderson, Solid State Electronics, 46, pp.573-576 (2002).
  456. "Finite Difference Analysis of Thermal Characteristics of CW Operation 850 nm Lateral Current Injection And Implant-Apertured VCSEL with Flip-Chip Bond design", R. Mehandru, G. Dang, S. Kim, F. Ren, W. S. Hobson, J. Lopata, S. J. Pearton, W. Chang, H. Shen, Solid State Electronics, 46, pp.699-704 (2002).
  457. "Devices for High Frequency Applications", S. J. Pearton and F. Ren, Elservier Science, Ltd., Encyclopedia of Materials: Science and Technology, pp.2101-2108 (2002).
  458. "High Power GaN Electronic Devices", A. P. Zhang, F. Ren, T. J. Anderson, C. R. Abernathy, R. K. Singh, P. H. Holloway, S. J. Pearton, D. Palmer and G. E. McGuire, Critical Rev. in Solid State & Mat. Sci., 27, pp.1071 (2002).
  459. "Characteristics of MgO/GaN Gate Controlled Metal Oxide Semiconductor Diodes", Jihyun Kim, R. Mehandru, B. Luo and F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton and Y. Irokawa, App. Phys. Lett., 80, pp.4555-4557 (2002).
  460. "Magnetic Properties of n-GaMnN Thin Films", G. T. Thaler, M. E. Overberg, B. Gila, R. Frazier, C. R. Abernathy, S. J. Pearton, J. S. Lee, S. Y. Lee, Y. D. Park, Z. G. Khim, J. Kim, and F. Ren, Appl. Phys. Lett., 80, pp. 3964-3966 (2002).
  461. "New Applications for Gallium Nitride", S. J. Pearton, C. R. Abernathy, M. E. Overberg, G. T. Thaler, A. H. Onstine, B. P. Gila, F. Ren, B. Luo, and J. Kim, Mat. Today, June, pp.24-31 (2002).
  462. "Temperature Characteristics of 850 nm, Intra-cavity Contacted, Shallow Implant-Apertured Vertical-cavity Surface-emitting Lasers", G. Dang, B. Luo, F. Ren, W.S. Hobson, J. Lopata, S.J. Pearton, W. Chang, H. Shen. Solid-state Elec. 46 pp.1247-1249 (2002).
  463. "MOCVD-grown HEMTs on Al2O3 substrates", J.W. Johnson, F. Ren, A.G. Baca, R.D.Briggs, R.J. Shul, C. Monier, J. Han, S.J. Pearton, Solid-State Electron. 46 pp.1193-1204 (2002).
  464. "Inversion Behavior in Sc2O3/GaN Gated Diodes", J. Kim, R. Mehandru, B. Luo, F. Ren, A.H. Onstine, C. R. Abernathy, S. J. Pearton, and Y. Irokawa, Appl. Phys. Lett., 8, pp.373-375 (2002).
  465. "Breakdown Voltage and Reverse Recovery Characteristics of Free-Standing GaN Schottky Rectifiers", J.W. Johnson, A.P. Zhang, W.B. Luo, F. Ren, S. J. Pearton, S.S. Park, Y.J. Park, and J. I. Chyi, IEEE Trans. Electron Dev., 49, pp. 32-36 (2002).
  466. "Pt Schottky Contact to n-(Ga,Mn)N", J. Kim, F. Ren, G.T.Thaler, M.E. Overberg, C. R. Abernathy, S.J.Pearton, and R.G. Wilson, Appl. Phys. Lett., 81, pp.685-660 (2002).
  467. "Proton and Gamma-Ray Irradiation Effects on InGaP/GaAs heterojunction Bipolar Transistors", B. Luo, J.W. Johnson, F. Ren, K.K. Allums, C. R. Abernathy, S.J.Pearton, R. Dwivedi, T. N. Fogarty, R. Wilkins, and D. Schoenfeld, J. Electrochem. Soc., 149, pp.G213-G217 (2002).
  468. "Effects of High Energy Proton Irradiation on DC Performance of GaAs Metal-Semiconductor Field Effect Transistors", B. Luo, J.W. Johnson, F. Ren, K.K. Allums, C. R. Abernathy, S.J.Pearton, R. Dwivedi, T. N. Fogarty, R. Wilkins, and D. Schoenfeld, J. Electrochem. Soc., 149, pp.G236-G238 (2002).
  469. "Influence of MgO and Sc2O3 Passivation on AlGaN/GaN High-Electron Mobility Transistors", B. Luo, J.W. Johnson, J. Kim, R. M. Menhandry, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S.J.Pearton, A. G. Baca, R.D. Briggs, R.J. Shul, C. Monier and J. Han, Appl. Phys. Lett., 80, pp. 1661-1663 (2002).
  470. "Comparison of the effects of deuterated SiNx Films on GaN and GaAs Rectifiers", B. Luo, K. Baik, F. Ren, S. J.Prearton and K. D. Mackenzie, Solid-State Electon., 46, pp.1453-1457 (2002).
  471. "Influence of PECVD Deuterted SiNx on GaAs MESFETs and GaAs/AlGaAs HBTs", B. Luo, F. Ren, C. S. Wu, S. J. Prearton, C. R. Abernathy and K. D. Mackenzie, Solid-State Electon., 46, pp.1459-1465 (2002).
  472. "Degradation of GaAs/AlGaAs Heterojunction Bipolar Transistors with Ion-Implant Isolation", M. R. Frei, T. Y. Chiu, C. Ra. Abernahty, F. Ren, T. R. Fullowan, J. Lothian, S. J. Pearton, B. Tseng, R. K. Montgomery, and P.R. Smith, B. Luo, K. Baik, F. Ren, S. J.Prearton and K. D. Mackenzie, Solid-State Electon., 46, pp.1301-1305 (2002).
  473. "Development Plasma Dielectric Method for Increased Pre-Metal Dielectric Interfacial Film Stability", J. M. Lobbins, S. J. Pearton, and F. Ren, B. Luo, K. Baik, F. Ren, S. J.Prearton and K. D. Mackenzie, Solid-State Electon., 46, pp.1367-1373 (2002).
  474. "Electrical Characteristics of p-GaN Schottky Rectifiers After PECVD SiNx Passivation", K. Baik, B. Luo, J. Kim, S. J.Prearton and F. Ren, Solid-State Electon., 46, pp.1459-1462 (2002).
  475. "Electrical and and Optical Properties of GaN Films Implanted with Mn and Co", A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, N. Y. Pashkova, Jihyun Kim F.Ren, M. E. Overberg, G.T. Thaler, C.R. Abernathy, S. J. Pearton and G.Wilson, J. Appl. Phys., 24, pp.3130-3136 (2002).
  476. "Comparison of Ohmic Contact Properties on n-GaN/p-SiC And n-AlGaN/p-SiC Heterojunctions", B. Luo, J. Kim, R. Mejandru, F. Ren, K.P. Lee, S. J. Pearton, A. Y. Polyakov, N.B. Smironv, A. V. Govorkov, E.A. Kozhukhova, A.V. Osinsky and P.E. Norris, Solid-State Electron., 46, pp.1345-1349 (2002).
  477. "Microstructure and Thermal Stability of Aluminum Nitride Thin Films Deposited at Low Temperature on Silicon", K. K. Harris, B. P. Gila, J. Deroaches, K. N. Lee, J. D. MacKenzie, C. R. Abernathy, F. Ren, and S. J. Pearton, J. Electrochem. Soc., 149, pp. G128-130 (2002).
  478. "Electrical Characterization of GaN Metal Oxide Semiconductor Diodes Using MgO as the Gate Oxide", J. Kim, B. Gila, R. Mehandru, J. W. Johnson, J. H. Shin, K. P. Lee, B. Luo, A. Onstine, C. R. Abernathy, S. J. Pearton, and F. Ren, J. Electrochem. Soc., 149, pp. G482-484 (2002).
  479. "Charge Pumping in Sc2O3/GaN Gated MOS Diodes", J. Kim, R. Mehandru, B. Luo, F. Ren, B. Gila, A. H. Onstine, C. R. Abernathy and S. J. Pearton, Electron. Lett., 38, pp. 920-921 (2002).
  480. "Effect of Sc2O3 and MgO Passivation Layers on the Output Power of AlGaN/GaN HEMTs", J. Gillespie, R. Fitch, J. Sewell, R. Dettmer, G. D. Via, A. Crespo, T. Jenkins, B. Luo, R. Mehandru, J. Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy and S. J. Pearton, IEEE Electron Dev. Lett., 23, pp.505-507 (2002).
  481. "Comparison of Surface Passivation Films for Reduction of Current Collapse in AlGaN/GaN High electron Mobility Transistors", B. Luo, R. Mehandru, J. Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy S. J. Pearton, R. Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, A. Crespo, and Y. Irokawa, J. Electrochem Soc. 149, pp.G613-619 (2002).
  482. "Electrical and Optical Properties of GaN Films implanted with Mn and Co", A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, N. Y. Pashkova, J. Kim, F.Ren, M. E. Overberg, G. T. Thaler, C. R. Abernathy, S. J. Pearton and R. G. Wilson, J. Appl. Phys., 92, pp.3130-3136 (2002).
  483. "High Energy Proton Irradiation Effects on SiC Schottky Rectifiers", S. Nigam, J. Kim, F. Ren, G. Y. Chung, M. F. MacMillan, R. Dwivde, T. N. Fogarty, R. Wilkins, K.K. Allums, C. R. Abernathy, S. J. Pearton, J. R. Williams, Appl. Phys. Lett., 81, pp.2385-2387(2002).
  484. "Edge Termination Design and Simulation for Bulk GaN Rectifiers", K. H. Baik, Y. Irokawa, F. Ren, S. J. Pearton, S. S. Park and S. K.Lee, J. Vc. Sci. & Technol. B20, pp. 2169-2172 (2002).
  485. "Site-Specific Growth of ZnO Nanorods Using Catalysis-Driven Molecular-Beam Epitaxy", Y. W. Heo, V. Varadarajan, M. Kaufman, K. Kaufman, K. Kim, D. P. Norton, F. Ren, and P. H. Fleming, App. Phys. lett., 81, pp. 3046-3048 (2002).
  486. "Effect of High-Density Plasma Etching on Optocal Properties And Surface Stoichiometry of ZnO", K. Ip, K. H. Baik, M. E. Overberg, E. S. Lambers, Y. W. Heo, D. P. Norton, F. Ren and J. M. Zavada, App. Phys. Lett., 81, pp.3546-3548 (2002).
  487. "Optical And Electrical Properties of GaMnN Films Grown by Molecular Beam Epitaxy", A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, N. Y. Pashkova, G. Thaler, M. E. Overberg, R. Frazier, C. R. Abernathy, S. J. Pearton J. Kim and F. Ren, J. App. Phys., 2, pp.4989-4993 (2002).
  488. "High Current Bulk GaN Schottky Rectifiers", K. Ip, K. H. Baik, B. Luo, F. Ren, S. J. Pearton, S. S. Park, Y. J. Park, and A. P. Zhang, Solid State Electronics, 46, pp.2169-2172 (2002).
  489. "The Role of cleaning Conditions And Epitaxial Layer Structure on Reliability of Sc2O3 and MgO Passivation on AlGaN/GaN HEMTs", B. Luo, R. M. Mehandru, J. Kim, F. ren, B. P. Gila, A.H. Onstine, C. R. Abernathy, S. J. Pearton, R. C. Fitch, J. Gillespie, R. Dellmer, T. Jenkins, J. Sewell, D. Vai and A. Crespo, Solid State Electronics, 46, pp.2185-2190 (2002).
  490. "Optical Absorption And Temperature-Dependent Resistivity of GaMnN Grown by Molecular Beam Epitaxy", J. Kim, F.Ren, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov and N. Y. Pashova, G. T. Thaler, M.E.Overberg, C.R.Abernathy and S. J. Pearton, Electrochemical & Solid-State Lett. 5, pp. G103-G105 (2002).
  491. "Edge Termination Design and Simulation for Bulk GaN Rectifiers", K. H. Baik, Y. Irokawa, F. Ren, S. J. Pearton, S. S. Park and S. K.Lee, J.Vac. Sci. & Technol. B20, pp.2169-2172 (2002).
  492. "Effects of Ar Inductively coupled Plasma Exosure on 4H-SiC Schottky Rectifiers", K. Ip, S. Nigam, K. P. Lee, K. H. Baik G. Y. Chung, M. F. MacMillan, F. Ren, and S. J. Pearton, J. Vac. Sci. Technol. B20, pp.2299-2302 (2002).
  493. "Phototransistor measurements in AlGaN/GaN HBTs;,L. Chernyak, A. Osinsky, S.J. Pearton, F. Ren, Electron. Lett., 37, 1411 (2001).
  494. "Recently Advances in Gate Dielectrics And Polarised Light Emission from GaN", S. J. Pearton, C. R. Abernathy, B. P. Gila, A. H. Onstine, M. E. Overberg, G. T. Thaler, J. Kim, B. Luo, R. Menhandru, F. Ren, and Y. D. Park, Opto-Elec. Rev. 10, pp.231-236 (2002).
  495. "Simulation of NPN and PNP AlGaN/GaN Heterojunction Bipolar Transistors Performance: Limiting Factor and Optimum Design", C. Momier, F. Ren, J. Han, P-C, Chang, R. J. Shul, K-P, Lee, A. P. Zhang, A. G. Baca, S. J. Pearton, IEEE Trans. ED 48, pp. 427-432 (2001).
  496. "Device Characteristics of the GaAs/InGaAsN/GaAs PNP Double Heterojunction Bipolar Transistor", P. C. Chang, N. Y. Li, A. G. Baca, H. Q. Hou, C. Monier, J. R. Roache, F. Ren, S. J. Pearton, IEEE EDL, 22, pp.113-115 (2001).
  497. "PNP InGaAsN-Based HBT with Graded Base Doping", C. Monier, A. G. Baca, P. C. Chang, N. Y. Li, H. Q. Hou, F. Ren, and S. J. Pearton, Electron. Lett., 37, pp1-2 (2001).
  498. "Comparison of GaN P-I-N and Schottky Rectifier Performance", A.P. Zhang, G. T. Dang, F. Ren, H. C. Cho, K. P. LEE, S. J. Pearton, J. I. Chyi, T. E. Nee, C. M. Lee, and C. C. Chuo, IEEE Tans, ED, 48, pp.407-411(2001).
  499. "Laterial AlxGa1-xN Power Rectifiers with 9.7 kV Reverse Breakdown Voltage", A. P. Zhang, J. W. Johnson, F. Ren, J. Han, A. Y. Polyakov, N. B. Smirnov. A. V. Govorkov, J. M. Redwing, K. P. Lee, and S. J. Pearton, Appl. Phys. Lett., 78, pp-823-825(2001).
  500. "Comparison of the Effect of H2 and D2 Plasma Exposure on GaAs MESFETs", B. Luo, F. Ren, K.P. Lee, C. S. Wu, D. Johnson, J.N. Sasserath, Solid State Electronics, 45, pp.1625-1638 (2001).
  501. "High Density Plasma via Hole Etching in SiC", H. Cho, K.P. Lee, P. Leerungnawarat, S.N.G. Chu, F. Ren, S.J. Pearton, and C.M. Zettering, J. Vac. Sci, Technol. A19, pp.1878-1881 (2001).
  502. "Vertical and Lateral GaN Rectifiers on Free Standing GaN Substrates", A.P. Zhang, J.W. Johnson, B. Luo, F. Ren, S.J. Pearton, S.S. Park, Y.J. Park, J.I. Chyi, App. Phys. Lett., 79, pp.1555-1557(2001).
  503. "Inductively Coupled High-Density Plasma-Induced Etch Damage of GaN MESFETs", R. J. Shul, L. Zhang, A. G. Baca, C. G. Willison, J. Han, S. J. Pearton, K. P. Lee, F. Ren, Solid State Electron., 45, pp.13-17 (2001).
  504. "Comparison of F2 Plasma Chemistries for Deep Etching of SiC", P. Leerungnawarat, K. P. Lee, S. J. Pearton, F. Ren, and S. N. G. Chu, J. Electron. Mat., 30, pp.202-206 (2001).
  505. "Electrical Properties and Spectra of Deep Centers in GaN p-i-n Rectifier Structures", A. Y. Polyakov, N. B. Smirnov, A. V. Govorkow, A. P. Zhang, F. Ren, S. J. Pearton, J. I. Chyi, T. E. Nee, C. C. Chou, and C. M. Lee, J. Mat. Mat., 30, pp.147-155 (2001).
  506. "Effect of N2 or Ar Plasma Exposure on GaAs/AlGaAs Heterojunction Bipolar Transistors", C. H. Hsu, C. C. Chen, B. Luo, F. Ren, S. J. Pearton, C. R. Abernathy, J. W. Lee, K. D. Mackenzie, and J. Sasserath, Solid State Electronics, 45, pp.275-279 (2001).
  507. "Self-Aligned Process for Emitter and Base Regrowth GaN HBTs and BJTs", K. P. Lee, A. P. Zhang, G. Dang, F. Ren, J. Han, S. N. G. Chu, W. S. Hobson, J. Lopata, C. R. Abernathy, S. J. Pearton, and J. W. Lee, Solid State Electronics, 45, pp.243-247 (2001).
  508. "Effect of N2 Plasma Treatment on Dry Etch Damage in n- and p-type GaN", D. G. Kent, K. P. Lee, A. P. Zhang, B. Luo, M. E. Overberg, C. R. Abernathy, F. Ren, K. D. Mackenzie, S. J. Pearton, Y. Nakaga, Solid-State Electronics, 45, pp.467-470 (2001).
  509. "Schottky Rectifiers Fabricated on Free-Standing GaN Substrates". J. W. Johnson, J. R. Laroche, F. Ren, B. P. Gila, M. E. Overberg, C. R. Abernathy, J. I. Chyi, C. C. Chuo, T. E. Nee, C. M. Lee, K. P. Lee, S. S. Park, Y. J. Park, and S. J. Pearton, Solid-State Electronics, 45, pp.405-410 (2001).
  510. "Process Development for Small Area GaN/AlGaN Heerojunction Bipolar Transistors", K. P. Lee, A. P. Zhang, G. Dang, F. Ren, J. Han, W. S. Hobson, J. Lopata, C. R. Abernathy, S. J. Pearton, J. We. Lee, J. Vac, Sci. Technol. A19, pp.1846-1849 (2001).
  511. "Fermi Level Development of Hydrogen Diffusivity in GaN", A. Y. Polyakov, N. B. Smironov, S. J. Pearton, F. Ren, B. Theys, F. Jomard, Z. Teukam, V. A. Dmitriev, A. E. Nikolaev, A. S. Usikov, and I. P. Nikitina, App. Phys. Lett., 79, pp. 1834-1836 (2001).
  512. "Comparison of The Effects of H2 and D2 Plasma Exposure on AlGaAs/GaAs High Electron Mobility Transistors", B. Luo, F. Ren, K. P. Lee, S. J. Pearton, C. S. Wu, R. F. Kopf, D. Johnson, and J. N. Sasserah, Solid State Electronics, 45 pp.1613-1624 (2001).
  513. "Small and Large Signal Performance And Gain-Switching of Intra-Cavity Contact, Shallow Implant Apertured VCSELs", W. S. Hobson, J. Lopata, L. M. F. Chirvsky, S. N. G. Chu, G. Dang, B. Luo, F. Ren, M. Tayahi, D. C. Kilper, and S. J. Pearton, Solid State Electronics, 45 pp.1639-1644 (2001).
  514. "Hydrogenation Effect on AlGaAs/GaAs Heterojunction Bipolar Transistors", B. Luo, K. Ip, F. Ren, K. P. Lee, C. R. Abernathy, S. J. Pearton, K. D. Mackenzie, Solid State Electronics, 45, pp.1733-1741 (2001).
  515. "Electrical Effects of N2 Plasma Exposure on Dry-Etch Damage in p- and n-GaN Schottky Diodes", D. G. Kent, K. P. Lee, A. P. Zhang, B. Luo, M. E. Overberg, C. R. Abernathy, F. Ren, K. D. Mackenzie, S. J. Pearton, and Y. Nakagawa, Solid State Electronics,45, pp.1873-1842 (2001).
  516. "dc and rf Performance of Proton-Irradiated AlGaN/GaN High Electron Mobility Transistors", B. Luo, J. W. Johnson, F. Ren, K. K. Allums, C. R. Abernathy, S. J. Pearton, R. Dwivedi, T. N. Fogarty, R. Wikins, A. M. Dabiran, A. M. Wcwchack, C. J. Polley, P. P. Chow, and A. G. Baca, App. Phys. Lett., 79, pp.2196-2198 (2001).
  517. "Electrical Effects of Plasma Enhanced Chemical Vapor Deposition of SiNx on GaAs Schottky Rectifiers", B. Luo, J. W. Johnson, F. Ren, K. H. Baik, and S. J. Pearton, J. App. Phys., 90, pp.4800-4804 (2001).
  518. "High Speed Modulation of 850 nm Intra-Cavity Contact Shallow Implant Apertured Vertical Cavity Surface Emitting Lasers", G. Dang, W. S. Hobson, L. M. F. Chirovsky, J. Lopata, M. Tayahi, S. N. G. Chu, F. Ren, and S. J. Pearton, IEEE Photonics Tech. Lett., 13, pp.924-926 (2001).
  519. "Comparison of Plasma Etch Chemistries for MgO", K. H. Baik, P. Y. Park, B. P. Gila, J. H. Shin, C. R. Abernathy, S. Norasetthekul, B. Luo, F. Ren, E. S. Lambers, S. J. Pearton, Appl. Surface Sci., 183, pp.26-32 (2001).
  520. "Effect of PECVD of SiO2 Passivation Layer on GaN and InGaP", K. H. Baik, P. Y. Park, B. Luo, K. P. Lee, J. H. Shin, C. R. Abernathy, W. S. Hobson, S. J. Pearton, F. Ren, Solid State Electronics, 45, pp.2093-2096 (2001).
  521. "Effect of Gate Length on DC Performance of AlGaN/GaN HEMTs Grown by MBE", J. W. Johnson, A. G. Baca, R. D. Briggs, R. J. Shul, J. R. Wendt, C. Monier, F. Ren, S. J. Pearton, A. M. Dabiran, A. M. Wowchack, C. J. Polley, P. P. Chow, Solid State Electronics,45, pp.1979-1985 (2001).
  522. "p-ohmic Contact Study for Intra-Cavity Contact in AlGaAs/GaAs Vertical Surface Emitting Lasers", B. Luo, G. Dang, A. P. Zhang, F. Ren, J. Lapata, S. N. G. Chu, W. S. Hobson, S. J. Pearton, J. Electrochem Soc.148, pp.G676-G679 (2001).
  523. "Wet and Dry Etching of Sc2O3", P. Y. Paerk, S. Norasetthekul, K. P. Lee, K. H. Baik, B. P. Gila, J. H. Shin, C. R. Abernathy, F. Ren, E. S. Lambers, and S. J. Perton, Appl. Phys. Science, 185, pp.52-59 (2001).
  524. "Role of Annealing Conditions And Surface Treatment on Ohmic Contacts to p-GaN and p-Al0.1Ga0.9N/GaN supperlattices", A. P.Zhang, B. Luo, J.W. Johnson, F. Ren, J. Han, S.J. Pearton, Apply. Phys. Lett., 26 pp. 3636-3638 (2001).
  525. "GaN Bipolar Junction Transistors with Regrowth Emitters", A.P.Zhang, J. Han, F. Ren, K. E. Waldrip, C. R. Abernathy, B. Luo, G. Dang, J.W. Johnson, K.P. Lee, and S. J. Pearton, Electrochem. And Solid-State Lett., 4, pp.G39-G41 (2001).
  526. "Processing Techniques for InGaAs/InGaAs/InGaAs Spin Field Effect Transistors", J. R. LaRoche, F. Ren, D. Temple, S. J.Pearton, J. M. Kuo, A.G.Baca, P.Cheng, Y.D.Park, Q.Hudspeth, A. F. Herd, and S.B.Arnason, Solid State Electronics, 44, pp.2117-2122 (2000).
  527. "Plasma Damage, in p-GaN", X.A.Cao, A.P.Zhang, G.T.Dang, F. Ren, S.J.Pearton, J.M.Can Hove, R.A.Hickman, R.J.Shul, and L.Zhang, J. Electon. Mat., 29, pp.256-261 (2000).
  528. "GaN Electronics", S. J. Pearton and F. Ren, Review of Adv. Materials, 12, 1571-1580(2000).
  529. "Simulation of GaN/AlGaN Heterojunction Bipolar Transistors: Part I-npn Structures", X. A. Cao, J. M. Van Hove, J. J. Klaassen, C. J. Polley, A. M. Wowchak, P P. Chow, D. J. King, A. P. Zhang, G. Dang, C. Monier, S. J. Pearton, and F. Ren, Solid State Electron. Solid-State Electronics, 44, 2000, pp.1255-1259.
  530. "Effect of Mg Ionization Efficiency on Performance of Npn AlGaN/GaN Heterojunction Bipolar Transistors", C. Monier, S. J. Pearton, P. C. Chang, A. G. Baca, F. Ren, App. Phys, Lett. 76, pp.3115-3117 (2000).
  531. "InGaAsN/AlGaAs p-n-p heterojunction bipolar transistor", P. C. Chang, A. G. Baca, N. Y. Li, P. R. Sharp, H. Q. Hou, J. R. LaRoche, and F. Ren, App. Phys. Lett., 76, pp.2788-1790(2000).
  532. "Common-Base Operation of GaN Bipolar Junction Transistors", X.A. Cao, G. Dang, A.P. Zhang, F. Ren, C.R. Abernathy, S.J. Pearton, J.M. Van Hove, J.J. Klaassen, C.J. Polley, A.M. Wowchack, P.P. Chow, D.J. King and S.N.G. Chu, Electrochem. & Soild State Lett. 3, pp.333-334 (2000).
  533. "Schottky Diode Measurements of Dry Etch Damage in n- and p-type GaN", X.A. Cao, A.P. Zhang, G. Dang, F. Ren, S.J. Pearton, R. J. Shul and L. Zhang, JVST A, 18, pp.1144-1148 (2000).
  534. "GaN Electronics for High Power, High Temperature Application", S. J. Pearton, F. Ren, A. P. Zhang, G. Dang, X. A. Aco, H. Cho, C. R. Abernathy, J. Han, A. G. Baca, C. Monier, P. Chang, R. J. Shul, L. Zhang, J. M. Van Hoive, P. P. Chow, J. J. Klaasseen, C. J. Polley, A. M. Wowchack, D. J. King, S. N. G. Chu, M. Hong, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, J. I. Chyi, C. M. Lee, T. E. Nee, C. C. Chuo, G. C. Chi, and J. M. Redwing, Interface, 9, pp.3439 (2000).
  535. "High Current, Common-Base GaN/AlGaN Heterostructure Bipolar Transistors", X.A. Cao, G. Dang, A.P. Zhang, F. Ren, J.M. Van Hove, J.J. Klaassen, C.J. Polley, A.M. Wowchak, P.P. Chow, D.J. King, C.R. Abernathy and S.J. Pearton, Electronchem. & Soild State Lett., 3, 144-146 (2000).
  536. "GaN/AlGaN HBT Fabrication", F. Ren, R. Hickman, J. M. Van Hove, P. P. Chow, J. J. Klaassen, J. R. LaRoche, R. Kopf, R. Wilson, A. G. Baca, R. J. Shul, C. R. Abernathy, and S. J. Pearton, Solid-State Electron, 44, 239 (2000).
  537. "High Temperature Characteristics of GaN-Based HBTs and BJTs", X. Cao, J. Van Hove, P. Chow, F. Ren, G. Dang, A. Zhang, C. R. Abernathy, and S. J. Pearton, Solid-State Electron, 44, 649 (2000).
  538. "GaN PN Junction Issues and Developments", R. Hickman, J. M. Van Hove, P. P. Chow, J. J. Klaassen, A. M. Wowchack, C. J. Polley, D. J. King, F. Ren, C. R. Abernathy, S. J. Pearton, K. B. Jung, H. Cho, and J. R. LaRoache, Solid-State electron. 44, 377(2000).
  539. "Creation of High Resistivity GaN by Implantation of of Ti, O, Fe, or Cr", X. A. Cao, S. J. Pearton, G. T. Dang, A. P. Zhang, F. Ren, R. G. Wilson, J. M. Van Hove, J. Appl. Phys., vol.87, pp.1091-1095 (2000).
  540. "p-Ohmic Contact Resistance for GaAs(C)/GaN(Mg)", G. Dang, A.P. Zhang, F. Ren, S.M. Donovan, C.R. Abernathy, W.S. Hobson, S.N.G. Chu, X.A. Cao, R.G. Wilson and S.J. Pearton, J. of Vac. Sci. & Technol. B, Solid-State Electron, 44, 105(2000).
  541. "GaN n- and p-type Schottky Diodes: Effects of Dry Etch Damage", X.A. Cao, S.J. Pearton, G. Dang, A.P. Zhang, F. Ren, J.M. Van Hove, IEEE Trans. Electron Devices 47, pp.1320-1324 (2000).
  542. "Forward Turn-on And Reverse Blocking Characteristics of GaN Schottky and p-i-n Rectifiers", A.P. Zhang, G. Dang, F. Ren, J. Han, H. Cho, E.S. Lambers, S.J. Pearton, J. I. Chyi, T. E. Nee, C. M. Lee, C. C. Chuo, and S. N. G. Chu, Solid-State Electronics, 44, pp.1157-1161 (2000).
  543. "Direct-current Characteristics of pnp AlGaN/GaN Heterojunction Bipolar Transistors", A.P. Zhang, G. Dang, F. Ren, J. Han, A. G. Baca, R. J. Shul, H. Cho, C. Monier, X. A. Cao, C. R. Abernarthy, and S.J. Pearton, App. Phys. Lett., 76, pp.2943-2945 (2000).
  544. "Thermal Stability And Etching Characteristics of Electron Beam Deposited SiO and SiO2" J.R. LaRoche, F. Ren, J.R. Lothian, J. Hong, S.J. Pearton, and E. Lambers, J. Vac. Sci. Technol., B18, pp.283-287 (2000).
  545. "Ultra-Deep, Low-Damage Dry Etching of SiC", H. Cho, P, Leerungnawarat, D. C. Hays, S. J. Pearton, S. N. G. Chu, R. M. Strong, C. M. Zetterling, M. Ostling, and F. Ren, App. Phys. Lett., 76pp. Pp.739-741 (2000).
  546. "Surface And Bulk Leakage Currents in High Breakdown GaN Rectifiers", F. Ren, A. P. Zhang, G. T. Dang, X. A. Cao, H. Cho, S. J. Pearton, J. I. Chyi, C. M. Lee, and C. C. Chuo, Solid-State Electronics, 44, pp.619-622 (2000).
  547. "Temperature Dependence of GaN High Breakdown Voltage Diode Rectifiers", J. I. Chyi, C. M. Lee, C. C. Chuo, ", F. Ren, A. P. Zhang, G. T. Dang, S. J. Pearton, S. N. G. Chu, and R. G. Wilson, Solid-State Electronics, 44, pp.613-617 (2000).
  548. "Low Temperature Silicon Nitride and Silicon Dioxide Film Processing by Inductively Coupled Please Chemical Vapor Deposition", J. W. Lee, K. D. Mackenzie, D. Johnson, J. N. Sasserath, S. J. Pearton, and F. Ren, J. of Electrochem. Soc., 147, pp.1481-1486 (2000).
  549. "Al Composition Dependence of Breakdown Voltage in AlxGa1-xN Schottky Rectifiers", F. Ren, A. P. Zhang, G. T. Dang, J. Han, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, J. M. Redwing, X. A. Cao, and S. J. Pearton, App. Phys. Lett., 76, pp. 1767-1769 (2000).
  550. "High Selectivity Inductively Coupled Plasma Etching of GaAs Over InGaP", D. C. Hays, H. Cho, J. W. Lee, M. W. Devre, B. H. Reelfs, D. Johnson, J. N. Sasserath, L. C. Meyer, E. Toussaint, F. Ren, C. R. Abernathy, and S. J. Pearton, App. Surface Sci., 156, pp.76-84 (2000).
  551. "High Voltage GaN Schottky Rectifiers", G. T. Dang, A. P. Zhang, F. Ren, X. Cao, S. J. Pearton, H. Cho, J. Han, J. I. Chui, C. M. Lee, C. C. Chuo, S. N. G. Chu, and R. G. Wilson, IEEE Trans. On Electron Dev., 47, pp.692-696 (2000).
  552. "Temperature Dependence and Current Transport Mechanisms in AlxGa1-xN Schotthy Rectifiers", A. P. Zhang, G. Dnag, F. Ren, J. Han, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, J. M. Redwing, H. Cho, and S. J. Pearton, App. Phys. Lett., 76, 3816-3818 (2000).
  553. "Electrical Properties and Defect States in Undoped High-Resistivity GaN Films Used in High-Power Rectifiers", A. Y. Polyakov, N. B. Smirnov and A. V. Govorkov, G. Dang, A. P. Zhang, F. Ren, X. A. Cao, S. J. Pearton, and R. G. Wilson, JVST, B18, pp.1237-1243 (2000).
  554. "The effect of N2 Plasma Damage on AlGaAs/InGaAs/GaAs High Electron Mobility Transistors. I. DC Characteristics", V. P. Trivedi, C. H. Hsu, B. Luo, X. Cao, J. R. LoRache, F. Ren, S. J. Praton, C. R. Abernathy, e. Lamber, M. Hoppe, C. S. Wu, J. Sasserath, J. W. Lee, K. Mackenzie, Solid-State electron. 44, pp.2101-2108(2000).
  555. "Improved Ni Based Composite Ohmic Contacts to n-SiC for High Temperature and High Power Device Applications", M. W. Cole, P. C. Joshi, C. W. Hubbard, M. C. Wood, M. H. Ervin, B. Geil, and F. Ren, J. Appl. Phys., 88, pp.2652-2657 (2000).
  556. "The Use of Amorphous SiO and SiO2 to Passivate AuGe-Based Cotact for GaAs Integrated Circuits", J. R. LaRoche, F. ren, J. R. Lothian, J. Hong, S. J. Pearton, and E. Lambers, Electrochem. And Solid-State Lett., 2, pp.395-397 (1999).
  557. "GaN: Processing, Defects, and Devices," S.J. Pearton, J.C. Zolper, R.J. Shul, F. Ren. App. Phys. Re. Vol-86, No-1 (1999) .
  558. "Nonalloyed High Temperature Ohmic Contacts on Te-doped InP", F. Ren, M. J. Antonell, C. R. Abernathy, S. J. Pearton, J. R. LaRoche, M. W. Cole, J. R. Lothian, and R. W. Gedridge, Jr., App. Phys. Lett., 74, 1845-1847(1999).
  559. "Photoreflectance Study of H2S Plasma-Passivated GaAs Surface", H. Shen, W. Zhou, J. Pamulapati, and F. Ren, App. Phys. Lett., 74, 1430-1432 (1999).
  560. "Growth and Fabrication of GaN/AlGaN Heterojunction Bipolar Transistor", J. Han, A. G. Baca, R. J. Shul, C. G. Willison, and L. Zhang, F. Ren, A. P. Zhang, and G. T. Dang, S. M. Donovan, X. A. Cao, H. Cho, K. B. Jung, C. R. Abernathy, and S. J. Pearton, R. G. Wilson, Volume 74, Issue 18, pp.2702-2704 (1999).
  561. "UV-Photoassisted Etching of GaN in KOH", H. Cho, K. H. Auh, J. Han, R. J. Shul, S. M. Donovan, C. R. Abernathy, E. S. Lambers, F. Ren, and S. J. Pearton, J. of Electronic Mat. 28, pp.290-294 (1999).
  562. "Selective Dry Etching Using Inductively Coupled Plasmas Part I. GaAs/AlGaAs andGaAs/InGaP." D.C. Hays, H. Cho, K.B. Jung, Y.B. Hahn, C.R. Abernathy, S.J. Pearton, F. Ren, W.S. Hobson. Applied Surface Science 147 pp.125-133 (1999).
  563. "W and WSi Ohmic Contacts on p- and n-type GaN", X. A. Cao, F. Ren, S. J. Pearton, A. Zeitouny , M. Eizenberg, J. C. Zolper, C. R. Abernathy, J. Han, R. J. Shul, and J. R. Lothian, J. Vac. Sci & Technol. A17, pp.1221-1225 (1999).
  564. "Depth and Thermal Stability of Dry Etch Damage in GaN Schottky Diodes", X. A. Cao, H. Cho, S. J. Pearton, G. T. Dang, A. P. Zhang, F. Ren, R. J. Shul, L. Zhang, R. Hickman, and J. M. Van Hove, App. Phys. Lett., 75, pp.232-234 (1999).
  565. "In0.5(AlxGa1-x)0.5P HEMT’s for High Efficient Low Voltage Power Amplifiers : Design, Fabrication, and Device Results", Y. C. Wang, J. M. Kuo, F. Ren, J. R. Lothian, H. S. Tsai, J. S. Weiner, H. Kuo, C. Lin, Y. K. Chen, and W. E. May, IEEE Trans. On Microwave Theo. & Techniq., 47, pp.1404-1412 (1999).
  566. "Study of NH3 Plasma Damage on GaAs Schottky Diode in Inductively Coupled Plasma System", L. C. Meyer, J. W. Lee, D. Johnson, M. Hwang, F. Ren, T. J. Anderson, J. R. LaRoche, J. R. Lothian, C. R. Abernathy, and S. J. Pearton, J. Electrochem. Soc. 146, pp. 2717-2719 (1999).
  567. "GaAs/InGaP Selective Etching in BCl3/SF6 High-Density Plasmas", D. C. Hays, H. Cho, J. W. Lee, M. W. Devre, B. H. Reelfs, D. Johnson, J. N. Sasserath, L. C. Laura, E. Toussaint, F. Ren, and S. J. Pearton, Electrochem. and Solid-State Lett., 2, pp.587-588 (1999).
  568. "Inductively Coupled Plasma Damage in GaN Schottky Diodes", X.A. Cao, A.P. Zhang, G. dang, H. Cho, F. Ren, S.J. Pearton, et al. J. Vac. Sci, Technol. B17, pp.1540-1544 (1999).
  569. "Electrical Effect of Ar Plasma Damage on GaN Diode Rectifiers", G. Dang, A.P. Zhang, X.A. Cao, F. Ren, H. Cho, S.J. Pearton, R.J. Shul, L Zhang, R. Hickman, J.M.Van Hove, Electrochem. & Solid-State Lett., September 2, pp. 472-474 (1999).
  570. "Damage to III-V Devices During Electron Cyclotron Resonance Chemical Vapor Deposition", J. W. Lee, K. D. Mackenzie, D. Johnson, R. J. Shul, Y. B. Hahn, D. C. Hays, C. R. Abernathy, F. Ren, S. J. Peaston, J. Vac. Sci, Technol. A17, pp.2183-2187 (1999).
  571. "Novel in-situ Ion Bombardment Process for A Thermally Stable (>800 °C) Plasma Deposited Dielectric", F. Ren, J. R. Lothian, S. J. Pearton, R. G. Wilson, J. R. LaRoache, C. C. Ren, J. W. Lee, and D. Johnson, Electrochem. & Solid-State Lett., 2, pp. 472-474 (1999).
  572. "Effect of Interfacial Oxides on Schottky Barrier Contacts to n- and p-type GaN", X. A. Cao, S. J. Pearton, G. Dang, A. P. Zhang, F. Ren, and J. M. Van Hove, Appl. Phys. Lett. 75, pp.4130-4132 (1999).
  573. "Electrical Effects of Plasma Damage in p-GaN", X. A. Cao, S. J. Pearton, A. P. Zhang, G. Dang, F. Ren, R. J. Shul, L. Zhang, R. Hickman and J. M. Van Hove, Appl. Phys. Lett. 75, pp.2569-2571 (1999).
  574. "W and W/WSi/InAlN Ohmic Contacts to n-type GaN", A. Zeitouny, M. Eizenberg, S. J. Pearton and F. Ren, at. Sci. Eng, B59, pp. 358-361 (1999).
  575. "Oxygen Implant Isolation of n-GaN Field-Effect Transistor Structures", G.Dang, X.A. Cao, F. Ren, S.J.Pearton, J. Han, A.G.Baca, and R.J. Shul, J. Vac. Sci.&Technol. B17, 2015-2018 (1999).
  576. "Oxygen Diffusion into SiO2-Capped GaN During Annealing", S.J.Pearton, H.Cho, J.R. LaRoche, F. Ren, R.G.Wilson, J.W. Lee, Appl. Phys. Lett. 75, pp.2569-2571 (1999).
  577. "Implanted p-n Junctions in GaN", X.A. Cao, J. R. LaRoche, F. Ren, S. J. Pearton, J. R.Lothian, R. K. Sing, R. G. Wilson, H. J. Guo, and S. J. Pennycook, Solid State Electronic, 43, pp..1235p1238 (1999).
  578. "GaN Metal Oxide Semiconductor Field Effect Transistors", F. Ren, S. J. Pearton, C. R. Abernathy, A. Baca, P. Chang, R. J. Shul, S.N.G., chu, M. Hong, M. J. Shchurman, and J. R. Lothia, Solid State Electronics, 43, pp..1817-1820 (1999).
  579. "Demonstration of GaN Mis Didoes by using Ain and Ga2O3(Gd¬203) as Dielectrics." F. Ren, C.R. Abernathy, J.D. Mackenzie, B.P. Gila, S.J. Pearton, M. Hong, M.A. Marcus, M.J. Schurman, A.G. Baca and R.J. Shul. Solid-State Electronics Vol-42, No.12; pp.2177-2181 (1998).
  580. "300°C GaN/AlGaN Heterojunction Bipolar Transistor", F. Ren, C. R. Abernathy, J. M. van Hove, P. P. Chow, and S. J. Pearton, MRS Internet J. Nitride Semicond. Res. 3, 41(1998).
  581. "Effect of temperature on Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor field-effect transistors", F. Ren, M. Hong, S. N. G. Chu, M. A. Marcus, M. J. Schurman, A. Baca, S. J. Pearton and C. R. Abernathy, App. Phys. Lett., 73, 3893-3895 (1998).
  582. "Thermal Stability of W and WSix Contacts on p-GaN," Cao XA, Pearton SJ, Ren F, Lothian JR, App. Phys. Lett., 73: (7) 942-944 (1998).
  583. "Electron cyclotron resonance chemical vapor deposited silicon nitride for T-gate passivation", F. Ren, J. R. Roche, T. Anderson, S. J. Pearton, J. W. Lee, D. Johson, J. R. Lothian, J. Lin, J. S. Weiner, R. J. Shul, and C. S. Wu, Electrochem. & Solid-Stae Lett., 1, (6), 239(1998).
  584. "Improved sidewall morphology on dry-etched SiO2 masked GaN features," Ren F, Pearton SJ, Shul RJ, Han J., J. Electronic Mat., 27: (4) 175-178 (1998).
  585. "Dry and wet etching of ScAlMgO4," Brandle CD, Ren F, Lee JW, Pearton SJ., Solid State Electronics, 42: (3) 467-469 (1998).
  586. "Ga2O3(Gd2O3)/InGaAs Enhancement-Mode n-Channel MOSFET's," Ren F, Kuo JM, Hong M, Hobson WS, Lothian JR, Lin J, Tsai HS, Mannaerts JP, Kwo J, Chu SNG, Chen YK, Cho AY, IEEE EDL 19: (8) 309-311 (1998).
  587. "Effect of high density H2 plasmas on InGaP/GaAs and AlGaAs/GaAs HEMTs," Ren F, Kopf RF, Kuo JM, Lothian JR, Lee JW, Pearton SJ, Shul RJ, Constantine C, Johnson D., Solid State Electronics, 42: (5) 749-753 (1998).
  588. "Depletion mode GaAs metal-oxide-semiconductor field effect transistors with Ga2O3(Gd2O3) as the gate oxide," Hong M, Ren F, Kuo JM, Hobson WS, Kwo J, Mannaerts JP, Lothian JR, Chen YK, J. Vac. Sci. & Technol. B16: (3) 1398-1400 (1998).
  589. "Thermal Stability of W and WSix Contacts on p-GaN," Cao XA, Pearton SJ, Ren F, Lothian JR, App. Phys. Lett., 73: (7) 942-944 (1998).
  590. "Evaluation of Encapsulation And Passivation of InGaAs/InP DHBT Devices for Long-Term Reliability," Kopf RF, Hamm RA, Ryan RW, Burm J, Tate A, Chen YK, Georgiou G, Lang DV, Ren F, J. OF Elect. Mat. 27: (8) 954-960 (1998).
  591. "Inductively coupled plasma etching of bulk 6H-SiC and thin-film SiCN in NF3 chemistries," Wang JJ, Lambers ES, Pearton SJ, Ostling M, Zetterling CM, Grow JM, Ren F, Shul RJ, J. Vac. Sci& Technol. A16: (4) 2204-2209 (1998).
  592. "Device degradation during low temperature ECR-CVD. Part I: GaAs MESFET's," Lee JW, MacKenzie KD, Johnson D, Shul RJ, Pearton SJ, Abernathy CR, Ren F, Solid State Electronics, 42: (6) 1015-1020 (1998).
  593. "Device degradation during low temperature ECR-CVD. Part II: GaAs/AlGaAs HBTs," Lee JW, MacKenzie KD, Johnson D, Shul RJ, Pearton SJ, Abernathy CR, Ren F, Solid State Electronics, 42: (6) 1021-1025 (1998).
  594. "Device degradation during low temperature ECR-CVD. Part III: GaAs/InGaP HEMTs, " Lee JW, MacKenzie KD, Johnson D, Shul RJ, Pearton SJ, Abernathy CR, Ren F, Solid State Electronics, 42: (6) 1027-1030 (1998).
  595. "Low temperature ECR-CVD of SiNx for III-V device passivation," Lee JW, MacKenzie K, Johnson D, Shul RJ, Pearton SJ, Ren F, Solid State Electronics, 42: (6) 1031-1034 (1998).
  596. "Schottky barrier heights of In0.5(AlxGa1-x)0.5P (X = 0 - 1) lattice matched to GaAs," Wang YC, Kuo JM, Ren F, Lothian JR, Mayo WE, Solid State Electronics, 42: (6) 1045-1048 (1998).
  597. "Copper dry etching with Cl2/Ar plasma chemistry," Lee JW, Park YD, Childress JR, Pearton SJ, Sharifi F, Ren F, J. Electrochem. Soc., 145: (7) 2585-2589 (1998).
  598. "Comparison of dry etch damage in GaAs/AlGaAs heterojunction bipolar transistors exposed to ECR and ICP Ar plasmas," Lee JW, Abernathy CR, Pearton SJ, Ren F, Constantine C, Barratt C, Shul RJ, Solid State Electronics, 42: (5) 733-742 (1998).
  599. "High rate etching of SiC and SiCN in NF3 inductively coupled plasmas," Wang JJ, Lambers ES, Pearton SJ, Ostling M, Zetterling CM, Grow JM, Ren F, Solid State Electronics, 42: (5) 743-747 (1998).
  600. "High Density Plasma Damage in InGaP/GaAs And AlGaAs/GaAs High Electron Mobility Transistors." J.W. Lee, S.J. Pearston, F. Ren, R.F. Koff, R.J. Shul, C. Constantine, and D. Johnson, Journal of the Electrochemical Society, Vol. 145, No. 11, 4036-4039 (1998).
  601. "Inductively coupled plasma etching of III-V semiconductors in Cl2-based chemistries," Lee JW, Lambers ES, Abernathy CR, Pearton SJ, Shul RJ, Ren F, Hobson WS, Constantine C., Solid State Electronics 42: (5) A65-A73 (1998).
  602. "An In-0.5(Al0.3Ga0.7)(0.5)P/In0.2Ga0.8As power HEMT with 65.2% power-added efficiency under 1.2V operation," Wang YC, Kuo JM, Lothian JR, Ren F, Tsai HS, Weiner JS, Lin J, Tate A, Chen YK, Mayo WE., Electronics Lett34: (6) 594-595 (1998).
  603. "High Temperature Stable Wsix Ohmic Contacts on GaN" S.J. Pearton, S.M. Donovan and C.R. Abernathy, F. Ren, J.C. Zolper, M.W. Cole A. Zeitouny and M. Eizenberg, R.J. Shul. pp. 296-300 (1998).
  604. "Device Processing of Wide Bandgap Semiconductors - Challenges and Directions," S.J. Pearton, F. Ren, R. Shul and J. Zolper, 191st meeting of ECS, Montreal, May 1997; ECS Proc. Vol. 97-1, 138 (1997).
  605. "Single- and double-heterojunction pseudomorphic In0.5(Al0.3Ga0.7)(0.5)P/In0.2Ga.8 as high electron mobility transistors grown by gas source molecular beam epitaxy," Wang YC, Kuo JM, Ren F, , Weiner JS, Lin J, Mayo WE, Chen YK., IEEE EDL 18: (11) 550-552 (1997).
  606. "Heterojunction Bipolar Transistors." F. Ren, Processing Technology for Semiconductors 213-241(1997).
  607. "Hydrogenation effects During High-Density Plasma Processing of GaAs MESFETS." F. Ren, J.W. Lee, C.R. Abernathy, S.J. Pearton, R.J. Shul, C. Constantine, and C. Barratt, Semicond. Sci. Technol. 12, 1154-1160 (1997).
  608. "Wet Chemical Etching Survey of III-Nitrides." C.B. Vartuli, S.J. Pearton, C.R. Abernathy, J.D. MacKenzie, F. Ren, J.C. Zolper, and R.J. Shul, Solid-State Electronics Vol. 41, No. 12, 1947-1951 (1997).
  609. "Damage Investigation in AlGaAs and InGaP Exposed to High Ion Density Ar and SF6 Plasmas." J.W. Lee, K.N. Lee, R.R. Stradtmann, C.R. Abernathy, S.J. Pearton, W.S. Hobson, and F. Ren (1997).
  610. "Materials characterization of WSi contacts to n(+)-GaN as a function of rapid thermal annealing temperatures," Cole MW, Ren F, Pearton SJ., J. Electrochem. Soc., 144: (10) L275-L277 (1997).
  611. "Stability of Hydrogen in ScAIMgO4." Solid-State Electronics Vol. 41, No. 12, 1943-1945 (1997).
  612. "Comparison of Dry Etch Damage in GaAs/AlGaAs HBTs Exposed to ECR and ICP Ar Plasmas," J. Lee, C.R. Abernathy, S.J. Pearton, F. Ren, C. Constantine and C. Barratt, 1997 Spring MRS Meeting, San Francisco, April 1997.
  613. "Luminescence Enchancement in AIN(Er) by Hydrogenation." SJ Pearton, CR Abernathy, JD MacKenzie, U Hommerich, X Wu, RG Wilson, RN Schwartz, JM Zavada, and F Ren, Appl. Phys. Lett 71 (13) 1807-1809 (1997)
  614. "Wet chemical and plasma etching of Ga2O3(Gd2O3)," Ren F, Hong M, Mannaerts JP, Lothian JR, Cho AY., J. Electrochem. Soc., 144: (9) L239-L241 (1997).
  615. "Pt/Ti/Pt/Au Schottky contacts on InGaP/GaAs HEMTs," Lothian JR, Ren F, Kuo JM, Weiner JS, Chen YK., Solid State Electronics, 41: (5) 673-675 (1997).
  616. "ICP Etch Damage in GaAs and InP Schottky Diodes," J.W. Lee, C.R. Abernathy, S.J. Pearton, F. Ren, W.S. Hobson, R.J. Shul and C. Constantine, 1997 Spring MRS Meeting, San Francisco, April 1997.
  617. "Current Transport in W and SWix Ohmic Contacts to InGaN and InN," C. Vartuli, S.J. Pearton, C.R. Abernathy, j. MacKenzie, M. Lovejoy, R. Shul, J. Zolper, A. Baca, K. Jones and F. Ren, 1997 Spring MRS Meeting, San Francisco, April 1997; Mat. Res. Soc. Symp. 468, 413 (1997).
  618. "Er Incorporation and Optical Activity in III-V Nitrides Grown by MOMBE," J. MacKenzie, C.R. Abernathy, S.J. Pearton, U. Hommerich, F. Ren, R.G. Wilson and J.M. Zavada, 1997 Spring MRS Meeting, San Francisco, April 1997; Mat. Res. Soc. Symp. 468, 123 (1997).
  619. "Low Dit, thermodynamically stable Ga2O3-GaAs interfaces: Fabrication, characterization, and modeling," Passlack M, Hong M, Mannaerts JP, Opila RL, Chu SNG, Moriya N, Ren F, Kwo JR., IEEE Trans. Electron Dev., 44: (2) 214-225 (1997).
  620. "A survey of ohmic contacts to III-V compound semiconductors," Baca AG, Ren F, Zolper JC, Briggs RD, Pearton SJ., Thin Sloid Films, 308: 599-606 (1997).
  621. "High performance pseudomorphic InGaP/InGaAs power HEMTs," Ren F, Lothian JR, Tsai HS, Kuo JM, Lin J, Weiner JS, Ryan RW, Tate A, Chen YK., Solid State Electronics, 41: (12) 1913-1915 (1997).
  622. "Demonstration of enhancement-mode p- and n-channel GaAs MOSFETs with Ga2O3(Gd2O3) as gate oxide," Ren F, Hong M, Hobson WS, Kuo JM, Lothian JR, Mannaerts JP, Kwo J, Chu SNG, Chen YK, Cho AY., Solid State Electronics, 41: (11) 1751-1753 (1997).
  623. "Post growth rapid thermal annealing of GaN: The relationship between annealing temperature, GaN crystal quality, and contact-GaN interfacial structure," Cole MW, Ren F, Pearton SJ., Appl. Phys. Lett., 71: (20) 3004-3006 (1997).
  624. "Formation of Dry Etched Gratings in GaN and InGaN," J.W. Lee, J. Hong, J. MacKenzie, C.R. Abernathy, S.J. Pearton, F. Ren and D. Sirortino, Journal of Electronic Materials 26, 290-293 (1997).
  625. "Hydrogen Passivation in n- and p-type 6H-SiC," F. Ren, S.J. Pearton, J.M. Crow and M. Bhaskaran, Journal of Electronic Materials 26, 198-202 (1997).
  626. "Plasma Etching of III-V Semiconductors in BCl3 Chemistries: Part I, GaAs and Related Compounds," J. Lee, J. Hong, E. Lambers, C.R. Abernathy, S.J. Pearton, W.S. Hobson and F. Ren, Plasma Chemistry and Plasma Processing 17, 155-168 (1997).
  627. "Plasma Etching of III-V Semiconductors in BCl3 Chemistries: Part II, InP and Related Compounds," J. Lee, J. Hong, E. Lambers, C.R. Abernathy, S.J. Pearton, W.S. Hobson and F. Ren, Plasma Chemistry and Plasma Processing 17, 169-181 (1997).
  628. "Electrical and Optical Changes in AlGaAs and InGaP During Dielectric Etching in ECR SF6 Plasmas," K. Lee, J. Lee, C.R. Abernathy, S.J. Pearton, W.S. Hobson and F. Ren, Solid State Electronics 41, 401-405 (1997).
  629. "Conduction Mechanisms in W and WSix Ohmic Contacts to InGaN and InN," C. Vartuli, S.J. Pearton, C.R. Abernathy, J. MacKenzie, M. Lovejoy, R. Shul, J. Zolper, A.G. Baca, M. Crawford, A. Jones and F. Ren, Solid State Electronics 41, 531-534 (1997).
  630. "Pt/Ti/Pt/Au Schottky contacts on InGaP/GaAs HEMTs," Lothian, J. R., Ren, F., and Kuo, J. M., Solid-State Electronics, vol 41, p.673 (1997).
  631. "High Temperature Annealing of GaN, InN and AlN and Related Alloys," J. Hong, J. Lee, C. Vartuli, J. MacKenzie, S. Donovan, C.R. Abernathy, R. Crockett, S.J. Pearton, J.C. Zolper and F. Ren, Solid State Electronics 41, 681-683 (1997).
  632. "Hydrogen Incorporation and Its Temperature Stability in SiC Crystals," J. Zavada, R. Wilson, F. Ren, S.J. Pearton and R.F. Davis, Solid State Electronics 41, 677-680 (1997).
  633. "InN-based Ohmic Contacts to InAlN," S. Donovan, J. MacKenzie, C.R. Abernathy, S.J. Pearton, F. Ren, K. Jones and M. Cole, Applied Physics Letters 70, 2592-2594 (1997).
  634. "Dry Etching of III-V Semiconductors in IBr/Ar ECR Plasmas," J. Lee, J. Hong, E. Lambers, C.R. Abernathy, S.J. Pearton, W.S. Hobson and F. Ren, Journal of Electronic Materials 26, 429-434 (1997).
  635. "Dry Etch Damage in ICP Exposed GaAs/AlGaAs HBTs," F. Ren, J. Lee, C.R. Abernathy, S.J. Pearton, C. Constantine, C. Barratt and R.J. Shul, Applied Physics Letters 70, 2410-2412 (1997).
  636. "Effects of H2 plasma exposure on GaAs/AlGaAs HBTs," J.W. Lee, C.R. Abernathy, S.J. Pearton, F. Ren, R.J. Shul, C. Constantine and C. Barratt, Solid State Electronics 41, 829-835 (1997).
  637. "Comparison of Ohmic Metallization Schemes for InGaAlN," F. Ren, C.B. Vartuli, S.J. Pearton, C.R. Abernathy, S.M. Donovan, J.D. MacKenzie, R.J. Shul, J.C. Zolper, M.L. Lovejoy, A.G. Baca, M.H. Crawford and K.A. Jones, Journal of Vacuum Science and Technology A15 802-805 (1997).
  638. "Comparison of Dry Etch Chemistries for SiC," G. McDaniel, J.W. Lee, E.S. Lambers, S.J. Pearton, P.H. Holloway, F. Ren, J.M. Crow, M. Bhaskaran and R.G. Wilson, Journal of Vacuum Science and Technology A15 885-888 (1997).
  639. "Fabrication of Spin-Current FET Structures," A. Cabbibo, J.R. Childress, S.J. Pearton, F. Ren and J.M. Kuo, Journal of Vacuum Science and Technology A15 1215-1218 (1997).
  640. "Plasma Damage Effects in InAlN FETs," F. Ren, J. Lothian, J. MacKenzie, C.R. Abernathy, C.B. Vartuli, S.J. Pearton and R.G. Wilson, Solid State Electronics 39 1747-1752 (1997).
  641. "Dry Etch Damage in GaAs MESFETs Exposed to ICP and ECR Ar Plasmas," F. Ren, J.W. Lee, C.R. Abernathy, S.J. Pearton, C. Constantine, C. Barratt and R.J. Shul, Journal of Vacuum Science and Technology B15 983-988 (1997).
  642. "Inductively Coupled Plasma Etch Damage in GaAs and InP Schottky Diodes," J.W. Lee, C.R. Abernathy, S.J. Pearton, F. Ren, W.S. Hobson, R.J. Shul, C. Constantine and C. Barratt, Journal of Electrochemical Society 144, 1417-1423 (1997).
  643. "Optical Emission End Point Detection for Via Hole in InP and GaAs Power Device Structures." S.J. Pearton, F. Ren, C.R. Abernathy, and C. Constantine, Materials Science & Engineering B23 36-40 (1996).
  644. "Patterning of Cu, Co, Fe, and Ag for magnetic nanostructures." K.B. Jung, J.W. Lee, Y.D. Park, J.A. Caballero, J.R. Childress, and S.J. Pearton. pp.1780-1784 (1996).
  645. "Comparison of Dry Etching Techniques for III-V Semiconductors in CH4/H2/Ar Plasmas," S.J. Pearton, J.W. Lee, E.S. Lambers, C.R. Abernathy, F. Ren, W.S. Hobson and R.J. Shul, Journal of Electrochemical Society 143, 752-757 (1996).
  646. " Wet Chemical Etch Solutions for AIxGa1-xP" J.W. Lee, C.J. Santana, C.R. Abernathy S.J. Pearton and F. Ren, Soli State Electronics, 39, 547-550(1996).
  647. "Process Development for III-V Nitrides." S.J. Pearton, C.R. Abernathy, F. Ren, R.J. Shul, S.P. Kilcoyne, M. Hagerott-Crawford, J.C. Zolper, R.G. Wilson, R.G. Schwartz, J.M. Zavada, Materials Science & Engineering B36 138-146 (1996).
  648. "Passivation of Carbon Doping InGaAs During ECR-CVD of SiN." F. Ren, R.A. Hamm, and J.R. Lothian, Solid-State Electronics Vol. 39, No. 5., 763-765 (1996).
  649. "Electron Cylotron Resonance Plasma Etching of InP and Related Materials in BCI3." F. Ren, W.S. Hobson, J.M. Kuo, J.R. Lothian, J. Lopata, S.J. Pearton, and J.A. Caballero, Solid-State Electronics Vol 39., No. 5, 696-698 (1996).
  650. "High Microwave Power ECR Etching of III-V Semiconductors in CH4/H2/Ar," S.J. Pearton, J.W. Lee, E.S. Lambers, J.R. Mileham, C.R. Abernathy, F. Ren, W.S. Hobson and R.J. Shul, Journal of Vacuum Science and Technology B 14, 118-124 (1996).
  651. "High Ion Density Plasma Etching of InGaP, AlInP and AlGaP in CH4/H2/Ar," J.W. Lee, S.J. Pearton, C. Santana, J.R. Mileham, E.S. Lambers, C.R. Abernathy, F. Ren and W.S. Hobson, Journal of Electrochemical Society 143, 1093-1099 (1996).
  652. "ECR Etching of InP and Related Materials in BCl3," F. Ren, W.S. Hobson, J.M. Kuo, J.R. Lothian, J. Lopata, S.J. Pearton and J.A.Caballero, Solid State Electronics 39, 695-699 (1996).
  653. "Passivation of C Doping in InGaAs During ECR-CVD of SiN," F. Ren, R. Hamm, J. Lothian, R.G. Wilson and S.J. Pearton, Solid State Electronics 38, 263-265 (1996).
  654. "A Surface Modification Study of InGaP Etched with an ECR Source at Variable Powers," M.W. Cole, W. Han, R. Pfeffer, F. Ren, W. Hobson, J. Lothian, J. Caballero and S.J. Pearton, Journal of Applied Physics 79, 3286-3288 (1996).
  655. "The Incorporation of H into III-V Nitrides During Processing," S.J. Pearton, R.J. Shul, R.G. Wilson, F. Ren, J. Zavada, C.R. Abernathy, C. Vartuli, J.W.Lee, J.R. Mileham and J.D. MacKenzie, Journal of Electronic Materials 25, 845-848 (1996).
  656. "Cl2-based Dry Etching of GaAs, AlGaAs and GaP," J.W. Lee, J. Hong, E.S. Lambers, C.R. Abernathy, S.J. Pearton, W.S. Hobson and F. Ren, Journal of Electrochemical Society 143, 2010-2016 (1996).
  657. "Dry Etching of InGaP and AlInP in CH4/H2/Ar," J.W. Lee, S.J. Pearton, C. Santana, E. Lambers, C.R. Abernathy, W.S. Hobson and F. Ren, Plasma Chemistry and Plasma Processing 16, 365-382 (1996).
  658. "Effect of BCl3 Dry Etching on InAlN Surface Properties," F. Ren, J. Lothian, Y.K. Chen, J.D. MacKenzie, S.M. Donovan, C.B. Vartuli, CR. Abernathy, J.W. Lee and S.J. Pearton, Journal of Electrochemical Society 143, L217-L219 (1996).
  659. "Dry Etching of InGaAlP Alloys in Cl2/Ar High Ion Density Plasmas," J. Hong, J.W. Lee, E.S. Lambers, C.R. Abernathy, C. Santana, S.J. Pearton, W.S. Hobson and R. Ren, Journal of Electronic Materials 25, 1428-1433 (1996).
  660. "Comparison of BCl3/Ar and BCl3/N2 Plasma Chemistries for Dry Etching of InGaAI.." F. Ren, J.R. Lothian, J.M. Kuo, W.S. Hobson, J. Lopata, J.A. Caballero, S.J. Pearton, and M.W. Cole, J. Vac. Sci. Technol. B 14(3) 1758-1763 (1996).
  661. "Comparison of BCl3/Ar and BCl3/N2 plasma chemistries for dry etching of InGaAlP alloys," J. Hong, J.W. Lee, C.J. Santana, C.R. Abernathy, S.J. Pearton, W.S. Hobson and F. Ren, Semiconductor Science and Technology 11, 1218-1223 (1996).
  662. "Cl2/Ar Plasma Etching of Binary, Ternary and Quaternary In-based Compound Semiconductors," J.W. Lee, J. Hong, C.R. Abernathy, E.S. Lambers, S.J. Pearton, W.S. Hobson and F. Ren, Journal of Vacuum Science and Technology B 14, 2567-2574 (1996).
  663. "Microstructural Stability of Ohmic Contacts to InxGa1-xN," A. Durbha, S.J. Pearton, C.R. Abernathy, J.W. Lee, P.H. Holloway and F. Ren, Journal of Vacuum Science and Technology B 14, 2582-2586 (1996).
  664. "Passivation of Dopants in InGaP using ECR Hydrogenation," J.W. Lee, S.J. Pearton, C.R. Abernathy, W.S. Hobson and F. Ren, Materials Science and Engineering B38, 263-267 (1996).
  665. "Reactivation of Acceptors and Trapping of Hydrogen in GaN/InGaN Double Heterostructures," S.J. Pearton, S. Bendi, K.S. Jones, V. Krishnamoorthy, R.G. Wilson, F. Ren, R. Karlicek and R.A. Stall, Applied Physics Letters 69, 1879-1881 (1996).
  666. "Effect of Ar Addition in ECR Ch4/H2/Ar Plasma Etching of GaAs, InP and InGaP," J.W. Lee, S.J. Pearton, C.R. Abernathy, W.S. Hobson and F. Ren, Solid State Electronics 39, 1095-1097 (1996).
  667. "Comparison of Dry Etching Techniques for InGaP, AlInP and AlGaP," J. Hong, J.W. Lee, C. Santana, C.R. Abernathy, E.S. Lambers, S.J. Pearton, W.S. Hobson and F. Ren, Solid State Electronics 39, 1109-1111 (1996).
  668. "Extremely High Etch Rate of In-based III-V Semiconductors in BCl3/N2 Based Plasma," F. Ren, W.S. Hobson, J.R. Lothian, J. Lopata, S.J. Pearton, J.A. Caballero and M.W. Cole, Journal of Electrochemical Society 143, 3394-3397 (1996).
  669. "Wet Chemical Etching of AlN and InAlN in KOH Solutions," C.B. Vartuli, S.J. Pearton, J.W. Lee, C.R. Abernathy, J.D. MacKenzie, J.C. Zolper, R.J. Shul and F. Ren, Journal of Electrochemical Society 143, 3681-3685 (1996).
  670. "Thermal Stability of Hydrogen in LiAlO2 and LiGaO2," R.G. Wilson, B.L. H. Chai, S.J. Pearton, C.R. Abernathy, F. Ren and J.M. Zavada, Applied Physics Letters 69 3848-3850 (1996).
  671. "Unintentional Hydrogenation of GaN and Related alloys During Processing," S.J. Pearton, C.R. Abernathy, C. Vartuli, J. Lee, J. MacKenzie, R.G. Wilson, R. Shul, F. Ren and J. Zavada, Journal of Vacuum Science and Technology A14, 831-836 (1996).
  672. "Plasma Etching of InGaP, AlInP and AlGaP in BCl3 Environment," J. Hong, J. Lee, C. Santana, C.R. Abernathy, S.J. Pearton, W.S. Hobson and F. Ren, Materials Science and Engineering B41, 247-253 (1996).
  673. "A surface modification study of InGaP etched with an electron cyclotron resonance source at variable microwave powers," Cole MW, Han WY, Pfeffer RL, Eckart DW, Ren F, Hobson WS, Lothian JR, Lopata J, Caballero JA, Pearton SJ., J. Appl. Phys., 79: (6) 3286-3289 ( 1996).
  674. "Unintentional Hydrogenation of GaN and Related Alloys During Processing," S.J. Pearton, C.R. Abernathy, C.B. Vartuli, J.W. Lee, J.D. MacKenzie, R.G. Wilson, R.J. Shul, F. Ren and J.M. Zavada, Journal of Vacuum Science and Technology A 14, 831-835 (1996).
  675. "Effect of Ar Addition in ECR CH4/H2/Ar Plasma Etching of GaAs, InP and InGaP," J.W. Lee, S.J. Pearton, C.R. Abernathy, W.S. Hobson and F. Ren, Solid State Electronics 39, 1095-1097 (1996).
  676. "Photoluminescence and x-ray photoelectron spectroscopy study of S-passivation InGaAs(001)" Geelhaar, L., Bartynski, R. A., Ren, F., Schnoes, M., and Buckley, D., N., J. Appl. Phys., 80, 3076(1996).
  677. "Thermodynamic and photochemical stability of low interface state density Ga2O3-GaAs structure fabricated by in situ molecular beam epitaxy," Passlack, M., Hong, M. W., Mannaerts, J. P., Opila, R. L., and Ren, F., Appl. Phys., Lett., 69, 302(1996).
  678. "Mid-IR interband cascade electroluminescence in type-II quantum wells," Yang RQ, Lin CH, Chang PC, Murry SJ, Zhang D, Pei SS, Kurtz SR, Chu AN, Ren F., Electron. Lett., 32: (17) 1621-1622 (1996).
  679. "Thermal stability of W ohmic contacts to n-type GaN," Cole MW, Eckart DW, Han WY, Pfeffer RL, Monahan T, Ren F, Yuan C, Stall RA, Pearton SJ, Li Y, Lu Y., J. App. Phys. 80: (1) 278-281 (1996).
  680. "A Structural and Chemical Investigation of WSix Ohmic Contacts to n+GaN," M. Cole, D. Eckert, W. Han, F. Ren and S.J. Pearton, Electrochemical Society Proceedings Vol. 96-15, 271-276 (1996).
  681. "Effect of Dry Etching on III-Nitride Surface Properties," F. Ren, S.J. Pearton, C.R. Abernathy, C. Vartuli and R.G. Wilson, Electrochemical Society Proceedings Vol. 96-15, 289-295 (1996).
  682. "BCI3/N2 Dry Etching of InP, InAIP, and InGaP," F. Ren, J.R. Lothian, J.M. Kuo, W.S. Hobson, J. Lopata, J.A. Caballero, S.J. Pearton, M.W. Cole, J. Vac. Sci. Technol. B14, 1758-1763(1996).
  683. "Comparison of Dry Etching Techniques for InGaP, AlInP and AlGaP," J. Hong, J.W. Lee, C. Santana, C.R. Abernathy, E. Lambers, S.J. Pearton, W.S. Hobson and F. Ren, Solid State Electronics 39, 1109-1112 (1996).
  684. "Electron Cyclotron Resonance plasma Etching of InP and related materials in BCI3" F. Ren, W.S. Hobson, J.M. Kuo, J.R. Lothian, J. Lopata, S.J. Pearton. pp.695-698; (1996).
  685. "Thermal Stability of Dry Etch damage in SiC." SJ Pearston, JW Lee, JM Grow, M Bhaskaran, F Ren, Appl. Phys. Lett. 68 (21) 2987-2989 (1996).
  686. "Recessed Gate GaN Field effect Transistor." F. Ren, J.R. Lothian, Y.K. Chen, R.F. Karlicek Jr., L. Tran, M. Schurmann and S.J. Pearton. pp.1819-1820 (1996).
  687. "A Structural and Chemical Investigation of WSix Ohmic Contacts to n+GaN," M. Cole, D. Eckert, W. Han, F. Ren and S.J. Pearton, 191st ECS Meeting, San Antonio, TX, October 1996; ECS Proc. Vol. 96-15, 271 (1996).
  688. "Dopant Passivation Occurring During ECR CH4/H2 Dry Etching of InGaAs/AlInAs HEMTs," F. Ren, A. Cho., J. Kuo, S.J. Pearton, J. Coblian, D. Sivco, R.G. Wilson and Y.K. Chen, Electronics Letters 31, 406-407 (1995).
  689. "High Efficiency Microwave Power AlGaAs/InGaAs of HEMTs Fabricated by Dry Etch Single Gate Recess," C.S. Wu, F. Ren, S.J. Pearton, M. Hu, C.K. Puo and R.F. Wang, IEEE Trans. Electronic Devices 42, 1419-1425 (1995).
  690. "Novel Fabrication of Self-Aligned GaAs/AlGaAs and GaAs/InGaP Microwave Power HBTs," F. Ren, C.R. Abernathy, S.J. Pearton, L.W. Yang and S.T. Tu, Solid State Electronics 38, 1635-1639 (1995).
  691. "Comparison of H+ and He+ Implant Isolation of GaAs Based HBTs," S. J. Pearton, C. R. Abernathy, J. W. Lee, F. Ren and C. S. Wu, Journal of Vacuum Science and Technology B 13, 15-21 (1995).
  692. "Use of InN for Ohmic Contacts on GaAs/AlGaAs HBTs," F. Ren, C. R. Abernathy, S. N. G. Chu, J. R. Coblisan and S. J. Pearton, Applied Physics Letters 66, 1503-1505 (1995).
  693. "Thermal Stability of Deuterium in InAlN and InGaAlN," S. J. Pearton, C. R. Abernathy, J. D. MacKenzie, R. G. Wilson, F. Ren and J. M. Zavada, Electronics Letters 31, 327-329 (1995).
  694. "Effect of Ion Energy on Hydrogen Diffusion in n- and p-type GaAs," S. J. Pearton, C. R. Abernathy, R. G. Wilson, F. Ren, and J. M. Zavada, Electronics Letters 31, 496-497 (1995).
  695. "Use of Ti in Ohmic Metal Contacts to p-GaAs," F. Ren, S. J. Pearton, C. R. Abernathy, and J. R. Lothian, Journal of Vacuum Science and Technology B 13, 863-866 (1995).
  696. "The Role of Hydrogen in Current-Induced Degradation of C-Doped GaAs/AlGaAs HBTs," F. Ren, C.R. Abernathy, S. Chu, J. Coblisan and S.J. Pearton, Solid State Electronics 38, 1137-1140 (1995).
  697. "Wet Chemical Etching in Al0.5In0.5P," J.W. Lee, S.J. Pearton, C.R. Abernathy, E. Hobson, F. Ren and C.S. Wu, Journal of Electrochemical Society 142, 100-103 (1995).
  698. "Nanoscale Structures in III-V Semiconductors Using Sidewall Masking and High Ion Density Dry Etching," F. Ren, S.J. Pearton, C.R. Abernathy and J. Collian, Journal of Vacuum Science and Technology A 13, 753-756 (1995).
  699. "High Density, Low Temperature Dry Etching in GaAs and InP Device Technology," S.J. Pearton, C.R. Abernathy and F. Ren, Journal of Vacuum Science and Technology A 13, 849-853 (1995).
  700. "SiN Encapsulation of Sulfide Passivated GaAs/AlGaAs Microdisk Lasers," W.S. Hobson, F. Ren, R. Slusher and S.J. Pearton, Journal of Vacuum Science and Technology A 13, 642-645 (1995).
  701. "Investigation of Wet Etching Solutions for InGaP," J.W. Lee, S.J. Pearton, C.R. Abernathy, W. Hobson, F. Ren and C.S. Wu, Solid State Electronics 38, 1871-1875 (1995).
  702. "Effect of ECR Plasma in the Luminescence Efficiency of InGaAs and InP," F. Ren, D. Buckley, K. Lee, S.J. Pearton, C. Constantine, W.S. Hobson, R.A. Hamm and P.C. Chao, Solid State Electronics 38, 2011-2014 (1995).
  703. "High Rate Dry Etching of InGaP In BCl3 Plasma Chemistries," F. Ren, W.S. Hobson, J.R. Lothian, J. Lopata, J. Caballero, S.J. Pearton and M. Cole, Applied Physics Letters 67, 2497-2499 (1995).
  704. "Damage Introduction in InGaP by ECR Ar Plasmas," J.W. Lee, S.J. Pearton, C.R. Abernathy, W.S. Hobson and F. Ren, Applied Physics Letters 67, 3289-3291 (1995).
  705. "Silicon nitride encapsulation of sulfide passivated GaAs/AlGaAs microdisk lasers", Hobson, W. S., Ren, F., Mohideen, U., Slusher, R. E., and Schnoes, M. L., J. Vac. Sci. Technol., A 12, 642-646 (1995).
  706. "Low Bias Dry Etching of Tungsten and Dielectric Layers on GaAs," S.J. Pearton, F. Ren and C.R. Abernathy, Semiconductor Science and Technology 8, 1897-1903 (1993).
  707. "Fabrication of Self-aligned GaAs/AlGaAs and GaAs/InGaP Power HBTs," F. Ren, J. Lothian, S.J. Pearton, C.R. Abernathy, D. Wisk, Y. C.Chen, H. Lin and T. Henry, Journal of Vacuum Science and Technology B 12, 2916-2926 (1994).
  708. "Low Temperature Cl2-based Dry Etching of III-V Semiconductors," S.J. Pearton, C.R. Abernathy, R.F. Kopf and F. Ren, Journal of Electrochemical Society 141, 2250-2255 (1994).
  709. "Dry Etching and Implantation Characteristics of Al0.5Ga0.5P," S.J. Pearton, C.R Abernathy and F. Ren, Applied Physics Letters 64, 3015-3017 (1994).
  710. "Diffusion of H2 in n-type Si," S.J. Pearton, Mat. Sci. Eng. B 23, 130-136 (1994).
  711. "Thermal Stability of Ti/Pt/Au Nonalloyed Ohmic Contacts on InN," F. Ren, C.R. Abernathy, S. J. Pearton and P. Wisk, Applied Physics Letters 64 1508-1510 (1994).
  712. "Low Bias Plasma Etching of GaN, AlN and InN," S.J. Pearton, C.R. Abernathy and F. Ren, Applied Physics Letters 64, 2294-2296 (1994).
  713. "Electrical Passivation in Hydrogen Plasma Exposed GaN," S.J. Pearton, C.R. Abernathy and F. Ren, Electronics Letters 30, 527-528 (1994).
  714. "Diffusion of H in Semiconductors and its Association with Defects," S.J. Pearton, C.R. Abernathy and F. Ren, Defect & Diffusion Forum 111/112, 1-36 (1994).
  715. "Science of Dry Etching of III-V Materials," S.J. Pearton and F. Ren, Journal of Materials Science: Materials in Electronics 5, 1-11 (1994).
  716. "Comparison of Surface Recombination Velocities in InGaP and AlGaAs Mesa Diodes," S.J. Pearton, F. Ren, W.S. Hobson, C.R. Abernathy and V.K. Chakrabarti, Journal of Vacuum Science and Technology B 12, 142-145 (1994).
  717. "Fabrication of GaN Nanostructures by a Sidewall-Etchback Process," S.J. Pearton, F. Ren, C.R. Abernathy and J.R. Coblisan, Semiconductor Science and Technology 9, 338-340 (1994).
  718. "Low Temperature ECR Plasma Etching of GaAs, AlGaAs and GaSb in Cl2/Ar," S.J. Pearton, F. Ren and C.R. Abernathy, Applied Physics Letters 64, 1673-1675 (1994).
  719. "Fabrication techniques for self-aligned GaAs-based HBTs and submicron gate length FETs", Ren, F., Int. J. mod. Phys. B8, 2221 (1994).
  720. "GaAs/AlGaAs Microdisk Lasers," U. Mohideen, W.S. Hobson, S.J. Pearton, F. Ren and R.E. Slusher, Applied Physics Letters 64, 1911-1913 (1994).
  721. "Dry Etched Mesas for Buried Heterostructure InGaAsP/InP Lasers Using ECR CL2/CH4/H2/Ar Discharges," S. J. Pearton, W. S. Hobson, F. Ren, C. R. Abernathy and C. Constantine, Journal of Materials Science: Materials in Electronics 5, 185-191 (1994).
  722. "Comparison of Multipolar and Magnetic Mirror ECR Sources for CH4/H2 Dry Etching of III-V Semiconductors," S. J. Pearton, C. R. Abernathy, R. Kopf, F. Ren and W. S. Hobson, Journal of Vacuum Science and Technology B 12, 1333-1340 (1994).
  723. "Use of Sn-doped GaAs for Non-alloyed Ohmic Contacts to HEMTs," F. Ren, A. Y. Cho, D. L. Sivco, S. J. Pearton and C. R. Abernathy, Electronics Letters 30, 912-913 (1994).
  724. "Dry Etch Gate Recess High Breakdown Voltage Power HEMTs," C. S. Wu, F. Ren, S. J. Pearton, M. Hu, C. Rao and R. Wang, Electronics Letters 30, 1803-1805 (1994).
  725. "New Dry Etch Chemistries for III-V Semiconductors," S. J. Pearton, U. K. Chakrabarti, F. Ren, C. R. Abernathy, A. Katz, W. S. Hobson and C. Constantine, Materials Science and Engineering B 25, 179-189 (1994).
  726. "Dry Etched Mesas for Buried Heterostructure InGaAsP/InP Lasers Using ECR Cl2/CH2/H2/Ar Discharges," S.J. Pearton, W.S. Hobson, F. Ren, C.R. Abernathy and C. Constantine, Journal of Materials Science: Materials in Electronics 5, 185-191 (1994).
  727. "Temperature Dependent Dry Etching Characteristics of III-V Semiconductors in HBr- and HI-based Discharges," S.J. Pearton, F. Ren and C.R. Abernathy, Plasma Chemistry and Plasma Processing 14, 131-143 (1994).
  728. "Dry Patterning of InGaN and InAlN," S. J. Pearton, C. R. Abernathy and F. Ren, Applied Physics Letters 64, 3643-3645 (1994).
  729. "Ar+ -Ion Milling Characteristics of III-V Nitrides," S. J. Pearton, C. R. Abernathy and F. Ren and J. Lothian, Journal of Applied Physics 76, 1210-1214 (1994).
  730. "Effect of Substrate Temperature on Dry Etching of InP, GaAs and A1GaAs in I2 and Br2 Plasmas," U. K. Chakrabarti, F. Ren, S. J. Pearton and C. R. Abernathy, Journal of Vacuum Science and Technology A 12, 1129-1134 (1994).
  731. "Low Resistance Ohmic Contacts on N+ Ion Bombarded InP," F. Ren, S. J. Pearton, J. Lothian, W. Chu. R. G. Wilson, C. R. Abernathy and S. S. Pei, Applied Physics Letters 65, 2165-2167 (1994).
  732. "The Impact of Impurity Incorporation on HBTs Grown by MOMBE," C. R. Abernathy, F. Ren, S. J. Pearton, P. Wisk, D. Bohling, G. Muhr, A. C. Jones, M. Stavola and D. Kozuch, Journal of Crystal Growth 136, 11-17 (1994).
  733. "Structural Characterization of GaN and GaAsN Grown by ECR-MOMBE," S. Bharatan, K. S. Jones, C. R. Abernathy, S. J. Pearton, F. Ren, P. Wisk and J. Lothian, Journal of Vacuum Science and Technology A 12, 1094-1098 (1994).
  734. "InP-based Single HBTs with Improved Breakdown Characteristics," F. Ren, C. R. Abernathy, S. J. Pearton and P. Wisk, Electronics Letters 30, 1184-1185 (1994).
  735. "Low Temperature Dry Etching of Tungsten metal, Dielectric and Trilevel Resist Layers on GaAs," S. J. Pearton, C. R. Abernathy, F. Ren, J. Lothian and R. Kopf, Plasma Chemistry and Plasma Processing, 14, 505-514 (1994).
  736. "Comparison of intrinsic and extrinsic carbon doping sources for GaAs and AIGaAs grown by MOMBE." C.R. Abernathy, S.J. Pearton, F. Ren, W.S. Hobson, and P.W. Wisk. Sci. Technol. pp. 1186-1190(1994).
  737. "Selective Regrowth of InP and GaAs by OMVPE and MOMBE Around Dry Etched Features," W.S. Hobson, S.J. Pearton, C.R. Abernathy, F. Ren and J. Lothian, Journal of Vacuum Science and Technology B 11, 536-541 (1993).
  738. "Dry-Processed Through-Wafer Via Holes for GaAs Power Devices," S.J. Pearton, F. Ren, A. Katz, J.R. Lothian, T.R. Fullowan and B. Tseng, Journal of Vacuum Science and Technology B 11, 153-157 (1993).
  739. "Damage Introduction in GaAs/AlGaAs and InGaAs/InP HBT Structures During ECR Plasma Processing," F. Ren, T.R. Fullowan, S.J. Pearton, J.R. Lothian, R. Esqui, C.R. Abernathy and W.S. Hobson, Journal of Vacuum Science and Technology B. 11, 1768-1771 (1993).
  740. "Dry and Wet Etching Characteristics of InN, AlN and GaN Deposited by ECR-MOMBE," S.J. Pearton, C.R. Abernathy, F. Ren, J. Lothian, P. Wisk and A. Katz, Journal of Vacuum Science and Technology B. 11, 1772-1775 (1993).
  741. "Fabrication of Y-gate, Submicron Gte Length GaAs MESFETs," F. Ren, S.J. Pearton, J.R. Lothian and C.R. Abernathy, Journal of Vacuum Science and Technology B 11, 2603-2607 (1993).
  742. "Y-gate Submicron Gate Length GaAs MESFETs," F. Ren, S.J. Pearton, J.R. Lothian and C.R. Abernathy, Journal of Vacuum Science and Technology B 11, 1850-1854 (1993).
  743. "The Effects of Ionizing Radiation on GaAs/AlGaAs and InGaAs/AlInAs HBTs," S. Witmer, S. Mittleman, D. Behy, F. Ren, T. Fullowan, R. Kopf. C.R. Abernathy, S.J. Pearton, D. Humphrey, R. Montgomery, P. Smith, J. Kreskovsky and H. Grubin, Materials Science and Engineering B 20, 280-290 (1993).
  744. "Reversible Changes in Doping of InGaAlN Alloys Induced by Ion Implantation or Hydrogenation," S.J. Pearton, C.R. Abernathy, P. Wisk, W. Hobson and F. Ren, Applied Physics Letters 63, 1143-1145 (1993).
  745. "Ion Implantation and Dry Etching Characteristics of InGaAsP, (wavelength=1.3 micron) " S.J. Pearton, C.R. Abernathy, P. Wisk and F. Ren, Journal of Applied Physics 74, 1610-1614 (1993).
  746. "Growth of InN of Ohmic Contact Formation by ECR-MOMBE," C.R. Abernathy, S.J. Pearton, F. Ren and P. Wisk, Journal of Vacuum Science and Technology B 11, 179-184 (1993).
  747. "Surface Recombination Velocities on Processed InGaP P-N Junctions," S.J. Pearton, F. Ren, W.S. Hobson, C.R. Abernathy, R.L. Masatis and U.K. Chakrabarti, Applied Physics Letters 63, 3610-3612 (1993).
  748. "Formation of Narrow, Dry-Etched Mesas for Long Wavelength InP-InGaAsP Lasers," F. Ren, S.J. Pearton, B. Tseng, J.R. Lothian, B. Segner and C. Constantine, Journal of Electrochemical Society 140, 3284-3289 (1993).
  749. "Enhanced Etch Rates of Tri-Level Resist Stacks in Microwave Discharges," S.J. Pearton, F. Ren and C.R. Abernathy, Semiconductor Science and Technology 8, 1905-1909 (1993).
  750. "SiNx/Sulfide Passivated GaAs/AlGaAs Microdisk Lasers," W.S. Hobson, V. Mohideen, S.J. Pearton, R.E. Sluster and F. Ren, Electronics Letters 29, 2129-2130 (1993).
  751. "Defects and Ion Redistribution in Implant-Isolated GaAs-based Device Structures," S.J. Pearton, F. Ren, S. Chu., C.R. Abernathy, W.S. Hobson and R. Elliman, Journal of Applied Physics 74, 6580-6583 (1993).
  752. "Self-aligned InGaP/GaAs HBTs for Microwave Power Applications," F. Ren, C.R. Abernathy, S.J. Pearton, J. Lothian, P. Wisk, T. Fullowan, Y. Chen, L. Yang, S. Fu and H. Lin, IEEE Electronic Device Letters EDL 14, 332-334 (1993).
  753. "Dry Etching of Via Connections for InP Power Devices," C. Constantine, C. Barraff, S.J. Pearton, F. Ren, J. Lothian, W. Hobson, A. Katz, L. Yang and P.C. Chao, Electronics Letters 29, 984-985 (1993).
  754. "Optical Emission Spectroscopy of ECR Discharges for III-V Semiconductor Processing," S.J. Pearton, T. Keel, A. Katz and F. Ren, Semiconductor Science and Technology 8, 1889-1895 (1993).
  755. "Growth of InGaP by MOMBE Using Novel Ga Sources," C.R. Abernathy, P. Wisk, F. Ren, S.J. Pearton, A. Jones and A. Rushworth, Journal of Applied Physics 73, 2283-2287 (1993).
  756. "Dry Surface Cleaning of Plasma-Etched HEMTs," S.J. Pearton, F. Ren, A. Katz, U. Chakrabarti, E. Lane, W. Hobson, R. Kopf, C.R. Abernathy, C.S. Wu, C. Bohling and J.C. Ivankovits, Journal of Vacuum Science and Technology B 11, 546-550 (1993).
  757. "Dry Etching of Thin Film InN, AlN and GaN," S.J. Pearton, C.R. Abernathy, F. Ren, J. Lothian, P. Wisk, A. Katz and C. Constantine, Semiconductor Science and Technology 8, 310-313 (1993).
  758. "The Role of the As Source in Selective Epitaxial Growth of GaAs and AlGa As by MOMBE," C.R. Abernathy, S.J. Pearton, F. Ren, P. Wisk, J. Lothian, D. Bohling and G. Muhr, Semiconductor Science and Technology 8, 979-984 (1993).
  759. "C-doped GaAs and AlGaAs by OMVPE: Doping Properties, O and H Incorporation and Device Applications," W.S. Hobson, S.J. Pearton, F. Ren, Y. Cheng, D. Kozuch and M. Stavola, Material Science and Engineering B. 20, 266-270 (1993).
  760. "Mg Doping of InP and InGaAs Grown by MOMBE using Dis-cyclopentadiemyl-magnesium," C.R. Abernathy, P. Wisk, S.J. Pearton and F. Ren, Applied Physics Letters 62, 258-260 (1993).
  761. "Dry Etching Characteristics of III-V Semiconductors in Microwave BC13 Discharges," S.J. Pearton, W.S. Hobson, C.R. Abernathy, F. Ren, T.R. Fullowan, A. Katz and A. Perley, Plasma Chemistry and Plasma Processing 11, 311-330 (1993).
  762. "Plasma Etching of ZnS, ZnSe, CdS and CdTe in ECR CH4/H2/Ar and H2/Ar Dis-charges," S.J. Pearton and F. Ren, Journal of Vacuum Science and Technology B 11, 15-19 (1993).
  763. "Long Term Stability at 200°C of Implant-Isolated GaAs," F. Ren, S.J. Pearton, C.R. Abernathy, P. Wisk, T. Fullowan, J. Lothian and R. Esqui, Semiconductor Science and Technology 8, 413-416 (1993).
  764. "Small Area InGaP Emitter, Carbon-Doped Base HBTs Grown by MOMBE," F. Ren, C.R. Abernathy, S.J. Pearton, J. Lothian, S. Chu, P. Wisk, T. Fullowan, B. Tseng and Y.K. Chen, Electronics Letters 28, 2250-2251 (1992).
  765. "Anisotropic Dry Etching of Submicron W. Features Using a Ti Mask," T. Fullowan, S.J. Pearton, F. Ren, G. Mahoney and R. Kostelak, Semiconductor Science and Technology 7, 1489-1493 (1992).
  766. "Alternative Group V Sources for Growth of GaAs and AlGaAs by MOMBE," C.R. Abernathy, P. Wisk, S.J. Pearton, F. Ren, D.A. Bohling and G. Muhr, Journal of Crystal Growth 124, 664-669 (1992).
  767. "Hydrogen Incorporation into GaAs, InP and Related Compounds During Epitaxial Growth and Device Processing," S.J. Pearton, C.R. Abernathy, W.S. Hobson, F. Ren, T. Fullowan, U. Chakrabarti, M. Stavola and D. Kozuch, Materials Science and Engineering B 13, 171-176 (1992).
  768. "InGaP/GaAs Single-and Double-Heterojunction Bipolar Transistors Grown by Organometallic Vapor Phase Epitaxy", Hobson, W. S., Ren, F., Lothian, J. R., and Pearton, S. J., Semi. Sci. and Tech., 7, 598-603 (1992).
  769. "InGaP/GaAs Based Single and Double Heterojunction Bipolar Transistors Grown by MOMBE", Ren, F., Abernathy, C. R., Pearton, S. J., Wisk, P. W., and Esagui, R., Electronics Letters, 28, 1150-1152 (1992).
  770. "Mg Doping of InP and InGaAs grown by Metal Organic Molecular Beam Epitaxy Using Bis-cyclopentadienylmagnesium", Abernathy, C. R., Wisk, P. W., Pearton, S. J., and Ren, F., Appl. Phys. Lett., 62, 258 (1992).
  771. "Reduction of Sidewall Roughness During Dry Etching of SiO2", Ren, F., Pearton, S. J., Lothian, J. R., Abernathy, C. R., and Hobson, W. S.,J. of Vac. Sci. & Tech. B 10, 2407-2411 (1992).
  772. "Hydrogen iodide-based dry etching of GaAs, InP and related compounds, Pearton, S. J., Chakrabarti, D. K., Hobson, W. S., Abernathy, C. R., Katz, A., Ren, F., Fullowan T. R., and Perley, A/ P., J. Electrochem. Soc. 139, 1763-1768 (1992).
  773. "Use of MeV O+ Ion Implantation for Isolation of GaAs/Al GaAs HBTs," S.J. Pearton, F. Ren, J. Lothian, T. Fullowan, A. Katz, P. Wisk, C. Abernathy, R. Kopf, R. Elliman, M. Ridgway, C. Jagadish and J. Williams, Journal of Applied Physics 71, 4949-4953 (1992).
  774. "New, High-Rate Dry Etch Mixture for InP-Based Heterostructures", Pearton, S. J., Chakrabarti, U. K., Coblentz, C., Ren, F., Fullowan, T. R., and Katz, A., Electronics Lett., 28, 448-449 (1992).
  775. "ECR Plasma Etching of CVD Diamond Thin Films", Pearton, S. J., Katz, A., Ren F., and Lothian, J. R., Electronics Lett. 28, 822-823 (1992).
  776. "Dry Etching of Submicron Gratings for InP Laser Structures - Comparison of HI/H2, CH4/H2 and C2H6/ H2 PlasmaChemistries", Pearton, S. J., Ren, F., Hobson, S. W., Green, C., and Chakrabarti, U. K., Semicond. Sci. Technol., 7, 1217-1222 (1992).
  777. "Operation of a Fully Integrated GaAs/AlxGa1-xAs FET-SEED: A Basic Optically Addressed Integrated Circuit", Woodward, T. K., Chirovsky, L. M. F., Lentine, A. L., D'Asaro, L. A., Laskowski, E.J., Pei, S. S., Ren, F., Przybylek, G. J., Smith, L. E., Focht, M. W., Guth, G. D., Asom, M. T., Kopf, R. F., Kuo, J. M., and Feuer, M. D., IEEE Photonics Technology Letters, 4, 614-616 (1992).
  778. "Batch Fabrication and Structure of Integrated GaAs-AlxGa1-xAs Field Effect Transistor-Self Electro-optic Effect Devices (FET-SEEDs)", D'Asaro, L. A., Chirovsky, L. M. F., Laskowski, E. J., Pei, S. S., Leibenguth, R. E., Woodard, T. K., Focht, M., Lentine, A. L., Asom, M. T., Guth, G., Kopf, R. F., Kuo, J. M., Pearton, S. J., Przybylek, G. J., Ren F., and Smith, L. E., IEEE Electron Device Letters, 13, 528-530 (1992).
  779. "Dopant Incorporation in GaAs and AlGaAs Grown by MOMBE for High Speed Devices," C.R. Abernathy, F. Ren, S.J. Pearton and J. Song, Journal of Electronic Materials 21, 323-327(1992).
  780. "The Effect of ECR Generated H2 Plasma on Growth of GaAs and AlGaAs by MOMBE," C.R. Abernathy, P. Wisk, S.J. Pearton and F. Ren, Journal of Vacuum Science and Technology B 10, 2153-2158(1992).
  781. "Mask Erosion During Dry Etching of Deep Features in III-V Semiconductor Structures," J. Lothian, F. Ren and S.J. Pearton, Semiconductor Science and Technology 7, 1199-1205 (1992).
  782. "Tri-Layer Lift-Off Metallization Process Using Low-Temperature Deposited SiNx," J. Lothian, F. Ren, S.J. Pearton, U.K. Chakrabarti, C.R. Abernathy and A. Katz, Journal of Vacuum Science and Technology B 10, 2361-2365 (1992).
  783. "Dry Etching Bilayer and Trilevel Resist Systems for Submicron Gate Length GaAs-Based HEMTs for Power and Digital Applications," F. Ren, S.J. Pearton, D. Tennant, D. Resnik, C.R. Abernathy, R. Kopf, C. Wu, M. Hu, C. Pai, B. Paine, D.C. Wan, and C.P. Wen, Journal of Vacuum Science and Technology B. 10, 2949-2955 (1992).
  784. "New High Rate Dry Etch Mixture for InP-Based Heterostructure," S.J. Pearton, U. Chakrabarti, D. Coblentz, F. Ren, T.R. Fullowan and A. Katz, Electronic Letters 28, 448-449 (1992).
  785. "Microwave Cl2/H2 Discharges for High Rate Etching of InP," C. Constantine, C. Barratt, S.J. Pearton, F. Ren and J. Lothian, Electronics Letters 28, 1749-1750 (1992).
  786. "Dry Etching of Submicron Gratings for InP Laser Structures - Comparison of HI/H2, CH2/H2 and C2H6/H2 Plasma Chemistries," S.J. Pearton, F. Ren, W.S. Hobson, C. Green and U.K. Chakrabarti, Semiconductor Science and Technology 7, 1217-1219 (1992).
  787. "Pseudomorphic HEMTs Processed with Damage-Free Dry Etch Gate Recess Technology," F. Ren, S.J. Pearton, C.R. Abernathy, C.S. Wu, M. Hu, C.K. Pao, D.C. Wang and C.P. Wen, IEEE Electronic Devices 39, 2701-2707 (1992).
  788. "Smooth Low-Bias Plasma Etching of InP in Microwave Cl2/CH4/H2 Mixtures," C. Constantine, C. Barratt, S.J. Pearton, F. Ren and J. Lothian, Applied Physics Letters 61, 2899-2901 (1992).
  789. "Self-Aligned Metal-Masked Dry Etch Processing of III-V Electronic and Photonic Devices," S.J. Pearton, A. Katz, A. Feingold, F. Ren, T.R. Fullowan, J. Lothian and C.R. Abernathy, Materials Science and Engineering B. 15, 82-89 (1992).
  790. "Damage Introduction in InP and InGaAs During Ar and H2 Plasma Exposure," S.J. Pearton, F. Ren, C.R. Abernathy, W.S. Hobson, R. Rullowan, R. Esaqui and J. Lothian, Applied Physics Letters 61, 586-588 (1992).
  791. "III-V Semiconductor Device Dry Etching Using ECR Discharges," S.J. Pearton, F. Ren, T. Fullowan, T. Lothian, A. Katz, R. Kopf and C.R. Abernathy, Plasma Sources: Science and Technology 1, 18-29 (1992).
  792. "Single Energy MeV Implant Isolation of Multilayer III-V Device Structures," R. Elliman, M. Ridgway, C. Jagadish, S.J. Pearton, F. Ren, J. Lothian, T. Fullowan, A. Katz, C.R. Abernathy and R. Kopf, Journal of Applied Physics 71, 1010-1015 (1992).
  793. "Growth of pnp HBT Structures by MOMBE," C.R. Abernathy, F. Ren, S.J. Pearton, T.R. Fullowan, P. Wisk and J. Lothian, Journal of Applied Physics 71, 1219-1225 (1992).
  794. "Ohmic Contacts to n-type InGaP," F. Ren, J. Kuo, S.J. Pearton and T.R. Fullowan, Journal of Electronic Materials 21, 243-247 (1992).
  795. "Growth of GaAs/AlGaAs HBTs by MOMBE," C.R. Abernathy, F. Ren, S.J. Pearton, T. Fullowan, R. Montgomery and P. Wisk, Journal of Crystal Growth 120, 234-241 (1992).
  796. "Rapid Isothermal Processing for Fabrication of GaAs Based Electronic Devices," S.J. Pearton, F. Ren, A. Katz, T.R. Fullowan, C.R. Abernathy, W.S. Hobson and R.F. Kopf, IEEE Electronic Devices 39, 154-160 (1992).
  797. "Carbon-doped MESFET Grown by MOMBE," F. Ren, C.R. Abernathy and S.J. Pearton, Materials Science and Engineering B. 13, 305-307 (1992).
  798. "Improved Performance of C-doped GaAs Based HBTs Through Use of InGaP," C.R. Abernathy, F. Ren, P. Wisk, S.J. Pearton and R. Esqui, Applied Physics Letters 61, 1092-1094 (1992).
  799. "Thermal Stability of GaAs(C)/InAs Superlattices Grown by MOMBE," C.R. Abernathy, P. Wisk, S.J. Pearton, W. Hobson, P. Fuoss, F. Lamelas, S.N.G. Chu and F. Ren, Applied Physics Letters 60, 1339-1341 (1992).
  800. "Activation and Diffusion Characteristics of Implanted Si and Be in AlInP," S.J. Pearton, W.S. Hobson, J.M. Kuo, H. Luftman, A. Katz and F. Ren, Applied Physics Letters 60, 1117-1119 (1992).
  801. "High-rate Anisotropic Dry Etching of InP in HI-based Discharges," S.J. Pearton, U.K. Chakrabarti, A. Katz, F. Ren and T. Fullowan, Applied Physics Letters 60, 838-840 (1992).
  802. "InGaP/GaAs Single and Double HBTs Grown by OMVPE," W.S. Hobson, F. Ren, J. Lothian and S.J. Pearton, Semiconductor Science and Technology 7, 590-594 (1992).
  803. "AlGaAs/GaAs HBTs Grown on InP by OMVPE," W.S. Hobson, F. Ren, S.J. Pearton, T. Fullowan, E. Laskowski and Y.K. Chen, Semiconductor Science and Technology 7, 595-637 (1992).
  804. "Wet and Dry Etching Characteristics of AlInP," J. Lothian, J. Kuo, W.S. Hobson, E. Lane, F. Ren and S.J. Pearton, Journal of Vacuum Science and Technology B. 10, 1061-1065 (1992).
  805. "InGaP/GaAs Based HBTs Grown by MOMBE," F. Ren, C.R. Abernathy, S.J. Pearton, P. Wisk and R. Esqui, Electronics Letters 28, 1550-1551 (1992).
  806. "GaAs Via Hole Etching and MOMBE Regrowth, " F. Ren, S.J. Pearton, C.R. Abernathy, R. Esqui, T.R. Fullowan, P. Wisk and J. Lothian, Semiconductor Science and Technology 7 850-853 (1992).
  807. "Stability of InAs Contact Layers on GaAs/AlGaAs HBTs During Implant Isolation Annealing," F. Ren, S.N.G. Chu, C.R. Abernathy, T.R. Fullowan, J. Lothian and S.J. Pearton, Semiconductor Science and Technology 7, 793-797 (1992).
  808. "Plasma and Wet Chemical Etching of In0.5Ga0.5P," J.R. Lothian, J.M. Kuo, F. Ren and S.J. Pearton, Journal of Electronic Materials 21, 441-445 (1992).
  809. "Reduction of Sidewall Roughness During Dry Etching of SiO2," F. Ren, S.J. Pearton, J. Lothian, C.R. Abernathy and W. Hobson, Journal of Vacuum Science and Technology B 10, 2407-2411 (1992).
  810. "Plasma Etching of III-V Semiconductor Thin Films," S.J. Pearton, F. Ren, T. Fullowan, A. Katz, W.S. Hobson, U.K. Chakrabarti and C.R. Abernathy, Materials Chemistry Physics 32, 215-229 (1992).
  811. "Growth and properties of Semi-Insulating InP using Multi-Frit Trichloride Vapor Phase Epitaxy (MTVPE)", K.W. Wang, V.D. Mattera, F. Ren, D. Zolnowski, J.N. Hollenhorst, and D.N. Buckley. Journal of The Electrochemical Society; Vol 138 No.9 (1991)
  812. "GaAs/AlGaAs QW and Modulation-doped Heterostructures Grown by OMVPE using TMAA1," W.S. Hobson, F. Ren, S. Sputz, T. Harris, C.R. Abernathy, S.J. Pearton and K.S. Jones, Applied Physics Letters 59, 1975-1977 (1991).
  813. "Carbon and Tin Doped npn and pnp AlGaAs/GaAs HBTs Grown by MOMBE," F. Ren, C.R. Abernathy, S.J. Pearton, T. Fullowan, J. Lothian, P. Wisk, Y.K. Chen, W.S. Hobson and P. Smith, Electronics Letters 27, 2391-2393 (1991).
  814. "Stability of C and Be-doped Base GaAs/AlGaAs HBTs," F. Ren, T. Fullowan, J. Lothian, P. Wisk, C.R. Abernathy, R. Kopf, S. Downey and S.J. Pearton, Applied Physics Letters 59, 3613-3615 (1991).
  815. "Dopant Passivation in AlInAs and InGaP by Atomic Deuterium," S.J. Pearton, J. Kuo, W.S. Hobson, F. Ren, M. Geva and A. Katz, Applied Physics Letters 59, 2703-2705 (1991).
  816. "Characteristics of Be+ and O+ co-implantation in GaAs/AlGaAs HBTs," S.J. Pearton, F. Ren, P. Wisk, T. Fullowan, R. Kopf, J. Kuo, W.S. Hobson and C.R. Abernathy, Journal of Applied Physics 69, 698-703 (1991).
  817. "The Feasibility of Using TMAA1 as an Al Precursor for MOMBE," C.R. Abernathy, A. Jordan, S.J. Pearton, F. Ren, F. Baiocchi, D. Bohling and G. Muhr, Journal of Crystal Growth 109, 31-36 (1991).
  818. "Use of UV/Ozone Cleaning to Remove C and O from GaAs Prior to MOMBE and MOCVD," S.J. Pearton, F. Ren, C.R. Abernathy, W.S. Hobson and H.S. Luftman, Applied Physics Letters 58, 416-418 (1991).
  819. "Improved n-type GaAs Ohmic Contacts Compatible with a Cl-based Dry-etch Process," F. Ren, T.R. Fullowan, S.J. Pearton, W.S. Hobson and H.B. Emerson, Journal of Electronic Materials 20, 305-308 (1991).
  820. "Novel C-doped p-channel MESFET Grown by MOMBE," F. Ren, C.R. Abernathy and S.J. Pearton, Journal of Applied Physics 70, 2885-2889 (1991).
  821. "Improvement of Ohmic Contacts on GaAs with in-situ Cleaning," F. Ren, A.B. Emerson, S.J. Pearton, R.T. Fullowan and J.M. Brown, Applied Physics Letters 58, 1030-1032 (1991).
  822. "Improved Breakdown of AlInAs/InGaAs HBTs," T.R. Fullowan, S.J. Pearton, R.F. Kopf, Y. Chen, M. Chin and F. Ren, Electronics Letters 27, 2340-2341 (1991).
  823. "In-based p-ohmic Contacts to the Base Layer of AlGaAs/GaAs HBT," F. Ren, S.J. Pearton, W.S. Hobson, T.R. Fullowan and A.B. Emerson, Applied Physics Letters 58, 1158-1160 (1991).
  824. "Sn Doping of GaAs and AlGaAs by MOMBE Using Tetraethyltin," C.R. Abernathy, S.J. Pearton, F. Ren and J. Song, Journal of Crystal Growth 113, 412-415 (1991).
  825. "Sidewall Roughness During Dry Etching of InP," U.K. Chakrabarti, S.J. Pearton and F. Ren, Semiconductor Science and Technology 6, 308-310 (1991).
  826. "10Gbit High Sensitivity, Low Error Rate Decision Circuit Implemented with C-doped AlGaAs/GaAs HBTs," R.K. Montgomery, P. Smith, F. Ren, T.R. Fullowan, C.R. Abernathy, P. Kopf, S.J. Pearton, J. Lothian, P. Wisk and R.N. Nottenburg, Electron Letters 29, 976-977 (1991).
  827. "Ion Implantation Doping and Isolation of InGaP," S.J. Pearton, J. Kuo, F. Ren, A. Katz and A. Perley, Applied Physics Letters 59, 1467-1469 (1991).
  828. "Dry Etch Processing of GaAs/AlGaAs HEMT Structures," S.J. Pearton, F. Ren, J. Lothian, T. Fullowan and U. Chakrabarti, Journal of Vacuum Science and Technology 9, 2487-2492 (1991).
  829. "AlGaAs/GaAs HEMTs, Inverters and Ring Oscillators with InGaAs and AlGaAs Etch Stop Layers," F. Ren, S.J. Pearton, R. Kopf, S. Chu and S. Pei, Electronics Letters 27, 1175-1176 (1991).
  830. "10 Gbit/s AlGaAs/GaAs HBT Driver IC For Lasers or Lightwave Modulators," R. Montgomery, F. Ren, C.R. Abernathy, T. Fullowan, R. Kopf, P. Smith, S.J. Pearton, P. Wisk, J. Lothian and R. Nottenburg, Electronics Letters 27, 1827-1828 (1991).
  831. "Self-Aligned AlGaAs/GaAs HBT Grown by MOMBE," F. Ren, T. Fullowan, C.R. Abernathy, S.J. Pearton, P. Smith, R. Kopf and E.J. Laskowski, Electronic Letters 27, 1054-1055 (1991).
  832. "Growth and Dry Etch Processing of MOMBE GaAs p-n Junctions," S.J. Pearton, F. Ren, C.R. Abernathy, T.R. Fullowan and J. Lothian, Semiconductor Science and Technology 6, 1049-1052 (1991).
  833. "Dry Etching and Implant Isolation Characteristics of AlGaAs Grown by MOMBE," S.J. Pearton, C.R. Abernathy, F. Ren and T.R. Fullowan, Semiconductor Science and Technology 1042-1047 (1991).
  834. "Use of Pt Metallization of Reduce Leakage Currents in GaAs MESFETs," F. Ren, T.R. Fullowan, A.B. Emerson, W.S. Hobson and S.J. Pearton, Journal of Electronic Materials 20, 595-599 (1991).
  835. "Temperature Dependence of Current Conduction in Barrier-Enhanced, Carbon Delta-Doped GaAs Diodes." A. Katz, S.J. Pearton, F. Ren and C.R. Abernathy, Journal of Vacuum Science & Technology B Vol. 8, No. 6, 1270-1273 (1990).
  836. "Schottky Barrier Enhancement on n-Type GaAs by As Implantation" C.S. Wu, C.S. Pai, S.J. Pearton, F. Ren, E.Lane and D.M. Schleich. Sub. Class: 73.30; S7.12 (1990).
  837. "Carbon-doped Base GaAs-AlGaAs HBTs Grown by MO-MBE and MO-CVD Regrowth," W.S. Hobson, F. Ren, C.R. Abernathy, S.J. Pearton, T.R. Fullowan and J. Lothian, IEEE Electronic Device Letters 11, 241-243 (1990).
  838. "Implant Isolation of GaAs-AlGaAs HBT Structures," F. Ren, S.J. Pearton, W.S. Hobson, T.R. Fullowan, J. Lothian and A.W. Yanof, Applied Physics Letters 56, 860-862 (1990).
  839. "Carbon Doping of III-V Compounds Grown by MOMBE," C.R. Abernathy, S.J. Pearton, F. Ren and W.S. Hobson, Houston, Dec. 1989: Journal of Crystal Growth, 105, 375-381 (1990).
  840. "GaAs on Si: Improved MBE Growth Conditions, Properties of Undoped GaAs, High 2DEG mobility, and Fabrication of High Performance AlGaAs/GaAs SDHT's and Ring Oscillators," Chand, N., Ren, F., and Macrander, A. T., J. Appl. Phys. 67, 2343 (1990).
  841. "GaAs-AlGaAs HBT with Carbon-Doped Base Grown by MOMBE," F. Ren, C.R. Abernathy, S.J. Pearton, T.R. Fullowan, J. Lothian and A.S. Jordan, Electron Letters 26, 724-725 (1990).
  842. "Epitaxial growth of n+, p+-n GaAs metal-semiconductor field-effect transistor structures using tertrabutylarsine,"Lum, R. M., Klingert, J. K., Ren, F., and Shah, N. J., Appl. Phys. Lett., 56, 379 (1990).
  843. "Carbon and Zinc Delta-Doping for Schottky Barrier Enhancement on a-type GaAs," S.J. Pearton, F. Ren, C.R. Abernathy, W.S. Hobson, S.N.G. Chu and J. Kovalchick, Applied Physics Letters 55, 1342-1344 (1989).
  844. "Effects of Atomic Hydrogen Incorporation in GaAs-on-Si," J.M. Zavada, S.J. Pearton, R.G. Wilson, C.S. Wu, M. Stavola, F. Ren, J. Lopata and W.C. Dautremont-Smith, Journal of Applied Physics 65, 347-349 (1989).
  845. "Thermal Stability of Tungsten Ohmic Contacts to the Graded-Gap InGaAs/GaAs/AlGaAs Heterostructure," Lahav, A., Ren, F., and Kopf, R. F., Appl. Phys. Lett., 54, 1693 (1989).
  846. "Processing Method for the Fabrication of sub-0.25 µm GaAs Heterostructure Devices and Circuits", Resnick, D. J., Ren, F., Tennant, D. M., and Kopf, R. F., SPIE Prec., 1089, 103 (1989).
  847. "Material and Device Properties of 3" Diameter GaAs-on-Si with Buried p-type Layers," S.J. Pearton, K.M. Lee, N.M. Haegel, C.J. Huang, S. Nakahara, F. Ren, V.J. Scarpelli and K.T. Short, Material Science and Engineering B. 3, 293-296 (1989).
  848. "High Performance AlGaAs/GaAs SDHTs and Ring Oscillators Grown by MBE on Si," F. Ren, N. Chang, Y.K. Chen, S.J. Pearton, D.M. Tennant and D.J. Resnik, IEEEE Electronic Device Letters 10, 559-561 (1989).
  849. "Ultra-High Doping of GaAs by Carbon During MOMBE," C.R. Abernathy, S.J. Pearton, R. Caruso, F. Ren and J. Kovalchick, Applied Physics Letters 55, 1750-1752 (1989).
  850. "GaAs heterostructure FET frequency dividers fabricated with high-yield 0.5 µm direct-write trilevel-gate-resist," F. Ren, Resnick, D. J., Atwood, D. K., Tu, C. W., Kopf, R. F., and Shah, N.J., Electron. Lett., 25, 1631 (1989).
  851. "High Performance AlGaAs/GaAs SDHT's and Ring Oscillators Grown by MBE on Si Substrates," Ren, F., Chand, N., Chen, Pearton, S. J., Tennant, D. M., and Resnick, D., IEEE Elec. Dev. Lett., EDL 10, 559 (1989).
  852. "Partially-doped GaAs SQW FET," F. Ren, C.W. Tu, R.F. Kopf, C.S. Wu, A. Chandia and S.J. Pearton, Electronic Letters 25, 1675-1676 (1989).
  853. "Performance of GaAs MESFETS on InP Substrates," F. Ren, W.S. Hobson, S.J. Pearton, L.J. Oster and P.R. Smith, IEEE Electronic Device Letters 10, 389-391 (1989).
  854. "Electrical and Structural Characterization of Highly Perfect Semi-insulating InGaAs Grown by Molecular Beam Epitaxy," Macrander, S. J. Hsieh, F. Ren and J. S. Patel, Crys. Growth, 23, 227-235(1988).
  855. "GaAs MESFET's, Ring Oscillators and Divide-by-2 Integrated Circuits Fabricated on MBE Grown GaAs on Si Substrates," F. Ren, N. Chand, P. Garbinski, S. J. Pearton, C. S. Wu, L. D. Urbanek, T. Fullowan and N. Shah, Electron. Lett., vol. 24, 1037, (1988).
  856. "Growth of Device Quality GaAs by Chemical Beam Epitaxy," H. Chiu, W. T. Tsang, J. A. Ditzenberger, C. W. Tu, F. Ren and C. S. Wu, J. Electron. Mat., 17, 217 (1988).
  857. "Material Properties of GaAs-on-Si and Fabrication of Digital Integrated Circuits", Chand, N., Ren, F., Chu, S. N. G., Sergent, A. M., Boone, T., and Lang, D. V, Mat. Res. Soc. Symp. Proc., 116, 205 (1988).
  858. "Selectively delta-doped quantum well transistor grown by gas source molecular beam epitaxy," T. Y. Kuo, T. Y., Cunningham, J. E., Schubert, E. F., Tsang, W. T., Chiu, T. H., Ren, F., and Fonstad, C. G., J. Appl. Phys., 64, 3324 (1988).
  859. "Hydrogenation of GaAs on Si: Effect on Diode Reverse Leakage Current," Pearton, S. J., Wu, C. S., Stavola, D., Ren, F., Lopata, J., Dautremont-Smith, W. S., Vernon, S. M., and Haven, V. E., Appl. Phys. Lett., 51, 469 (1987).
  860. "Ion Implantation and Activation Behavior of Si in MBE-Grown GaAs on Si Substrates for GaAs MESFET's" Chand,N., Ren, F., Pearton, S. J., Shah, N. J., and. Cho, A. Y., , IEEE Elec. Dev. Lett.,EDL 8, 185 (1987).
  861. "Hydrogen Bonding in Polymer Mixtures", Kwei, T. K., Pearce, E. M., Ren, F., and Chen, J. P., J. Polymer. Sci., 24, 1597 (1986).
  862. "Parameter Identification of Bilinear Systems by Block Pulse Functions", Ren, F., Shih, Y. P., Pei, S. C., and Guo, T., J. Chinese Inst. of Eng., 6, 39 (1983).
  863. "Model Reduction and Control System Design via Block Pulse Functions," Shih, Y. P., Hwang, C., and Ren, F., J. Chinese Inst. of Chem. Eng., 11, 153 (1980).