Wide energy-bandgap electronic devices, typically based on GaN films, have been extensively investigated in recently years due to their unique optical and electronic properties and exciting potential applications. In particular, visible and ultraviolet lasers and light-emitting diodes for have been demonstrated for display and data-storage applications. This effort is part of a consortium chartered with developing the requisite technologies for high power and high breakdown voltage electronics based on GaN materials. Contact metallization, passivation, device integration, and characterization studies are routinely performed using state-of-the-art equipment. This work has been supported by the Office of Naval Research, the Electric Power Research Institute, and the Defense Advanced Research Projects Agency.

This research program aims to develop the basic science and technology of low-temperature deposition methods that can provide reliable and reproducible passivation for compound semiconductor devices, such as pseudomorphic AlGaAs/InGaAs/GaAs PHEMTs, GaAs MESFETs, GaAs based HBTs and InGaAs/InP based HBTs, and GaN based devices. There are three major topics under investigation:

• Deposition of silicon-nitride based dielectrics using different precursors such as SiH4/NH3, SiH4/N2, SiD4/ N2, SiD4/ND3, and hydrogen-free dielectric, and incorporation of a D, O, or N plasma treatment into to reduce the occurrence of dangling bonds.
• Optimization of the dielectric material quality with different deposition techniques and conditions. The systems considered include conventional plasma enhanced chemical vapor deposition (PECVD), down-stream electron cyclotron resonance chemical vapor deposition (ECRCVD), and inductively coupled plasma chemical vapor deposition (ICPCVD).
• Characterization of device degradation mechanisms related to deposition techniques, dielectric film quality, and the hydrogen passivation effect.

• “GaN-type enhancement MOSFET using heterostructure“, Abernathy, Irokawa, Pearton, Ren, US 6,914,273 (2005).
• “Air Isolated Crossovers”, Kossives, Tai, Ren, US 6,683,384(2004).
• “Method of Making An Article Comprising An Oxide Layer on A GaAs-Based Semiconductor Body”, Chen, Cho, Hong, Hobson, Kuo, Kwo, Murphy, Ren, US 6,271,0698(2001).
• “Method of Forming A T-Shape Gate”, Lothian, Ren, Weiner, US 5,981,319(1999).
• “Article Comprising An Oxide Layer on GaN“, Hong, Hobson, Lothian, Mannaerts, Ren, US 5,912,498(1999).
• “GaAs Based MOSFET, And Method of Making Same”, Cho, Hong, Hobson, Mannaerts, Ren, US 5,903,037(1999).
• “Method of making an article comprising an oxide layer on a GaAs-based semiconductor body”,, Hong, Hobson, Lothian, Mannaerts, Ren, European 993055128(1999).
• “Method of making an article comprising an oxide layer on a GaAs-based semiconductor body”, Hong, Hobson, Lothian, Mannaerts, Ren, European 993055128(1999).
• “Improved Air Isolation Crossovers”, Kossives, Tai, Ren, European 98307916(1998).
• “Article Comprising An Oxide Layer on GaN and Method of Making the Article”, Hobson, Hong, Lothian, Mannaerts, Ren, European, 98307928(1998).