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Olga Kryliouk Research Associate Professor Ph.D., 1986, Moscow State University Chemistry of electronic materials Chemical vapor deposition Epitaxial film growth Materials characterization Email: olgak@grove.ufl.edu

Brief Descriptions of Current Research

Our research interests are primarily in the area of electronic materials and processing.  The applications of this research are broad and apply to many different fields of science and industry.  The goal of our research is to understand the fundamental chemical and electronic properties of the materials of scientific and technological importance. 

Thin-Film Technology Our works is focused on the exciting, innovative field of thin-film technology for the fabrication of microelectronic and optical devices.  Among the most important optoelectronic and electronic materials developed in recent years are Gallium nitride (GaN) and ternary nitride semiconductor materials containing indium (In_xGa_1-xN) or aluminum (Al_xGa_1-xN).  In particular, GaN has been perhaps the most widely researched material over the past ten years for its use in production of light emitting diodes operating in blue and ultraviolet wavelengths, and for high temperature, radiation-hardened electronic devices.  A distinguishing feature of GaN is that most of its applications require its deposition on foreign substrates.  As a consequence of such heteroepitaxy requirements, the quality of the films depends mainly on the properties of the substrate.  The modern Metal Organic Vapor Phase Epitaxy (MOVPE) technique is focused on the preparation of high quality materials with specific physical and chemical properties.  We are exploring a novel H-MOVPE technique for the deposition of III‑nitrides that can alternate between MOVPE and Hydride Vapor Phase Epitaxy (HVPE), combining the advantages of both.  Fundamental knowledge of the chemistry involved in the growth process (gas phase and surface reactions), nucleation processes, growth rate, morphology, selectivity and impurity levels is the key to realizing a successful MOVPE technique.  Our approach is particularly promising for the development nano-size optoelectronic devices of high efficiency based on III-nitride materials.

Nanomaterials are experiencing rapid development in recent years due to their exciting potential applications in different areas. 

Our methods for growing III-nitride materials in the form of quantum dots of nanoscale sizes  opens up exciting new potential applications.  The advantage of III-nitrides quantum dots over thin films is the favorable correlation between their dimension and emission wavelength.  The basic MOVPE growth parameters and the growth mechanisms of InN and GaN nanorods are being investigated.  Our experimental work is complemented with theoretical studies leading to equilibrium thermodynamic calculations, reaction pathways studies, and qualitative analysis using computational chemistry.  We employ a wide range of characterization techniques, such as XRD, AFM, SEM, TEM, AES, XPS, SIMS, PL, and Hall measurements.

Selected Publications

• “Influence of Polarity on GaN Thermal Stability”, M. Mastro, O. Kryliouk, T. Anderson, A. Davydov, A. Shapiro, Journal of Crystal Growth, Vol. 274, pp. 38 - 46 (2005).
   
•  “Growth and Characterization of Freestanding Gallium Nitride Using (100) LiAlO₂ Substrates”, M. D. Reed, O. M. Kryliouk, M. A. Mastro, and T. J. Anderson, Journal of Crystal Growth, Vol. 274, pp. 14 – 20 (2005)
   
• “Method and Apparatus for Producing Large Area GaN Crystals”, O. Kryliouk T. Anderson and Bruce Chai United States Patent 6, 733,591 B2 (2004).
   
•  “The Influence of Substrate Polarity on the Blue Emission from As-doped GaN Layers Grown by Molecular Beam Epitaxy”, S.V. Novikov, L.X. Zhao, C.T. Foxon, I. Harrison, R.P. Campion, C.R. Staddon, S.W. Kang, O. Kryliouk, T. Anderson, MRS Proceeding, Vol. 798, pp. 533-538 (2004).
   
• “High breakdown M-I-M structures on bulk AlN”, B. Luo, J.W. Johnson, F. Ren, S.J. Pearton, S.N.G. Chu, A.E. Nikolaev, Yu.V.Melnik, V.A. Dmitriev, O. Kryliouk, T.J. Anderson, Solid State Electronics, Vol. 46, pp. 573-576 (2002).
   
• “GaN Grown by Hydride-Metal Organic Vapor Phase Epitaxy on Lattice- Matched and Silicon Substrate”, M. Mastro, O. Kryliouk, T. Dann, T. Anderson, A. Nikolaev, Yu. Melnik, V. Dmitriev, Material Science Forum, Vols. 389-393, pp. 1473-1476 (2002).
   
• “GaN Substrate: Growth and Characterization”, O. Kryliouk, M. Reed, M. Mastro, T. Anderson and Bruce Chai, Phys. Stat. Sol. (a), Vol. 176, 407-410 (1999).
   
• Growth GaN Single Crystal Substrate”, O. Kryliouk, M. Reed, T. Dann, T. Anderson and B. Chai, Mat. Sci. Eng. Vol. B59, 6-11 (1999).