Olga Kryliouk - Chemical Engineering at the University of Florida

UF Chemical Engineering > People > Faculty > Olga Kryliouk

	Olga Kryliouk Ph.D., 1986, Moscow State University
	Courtesy Faculty
	GLO-USA, Inc. Olga.Kryliouk@glo.se
	Areas
	1D nanostructured materials
	Chemistry of electronic materials
	Chemical vapor deposition
	Epitaxial film growth
	Materials characterization

Our research interests are primarily in the area of electronic materials and processing. The applications of this research are broad and apply to many different fields of science and industry. The goal of our research is to understand the fundamental chemical and electronic properties of the materials of scientific and technological importance.

Nanomaterials

Nanomaterials are experiencing rapid development in recent years due to their exciting potential applications in different areas. One-dimensional (1D) materials are of both fundamental and technological interest.

Our methods for growing III-nitride materials in the form of quantum dots (QDs), nonorods (NRs), and nanowires (NWs) opens up exciting new potential applications. The advantage of III-nitrides 1D nanostructured materials over thin films is the favorable correlation between their dimension and emission wavelength. We are interested in control synthesis of new classes of nanostructured materials and development of new growth approaches. Major efforts will be placed on studies of self-organization and chemical integration with the focus of assembling individual NRs and NWs into desired configurations. The basic MOVPE and HVPE growth parameters and the growth mechanisms of InxGa1-xN 1D materials are being investigated. Our experimental work is complemented with theoretical studies leading to equilibrium thermodynamic calculations, reaction pathways studies, and qualitative analysis using computational chemistry. We employ a wide range of characterization techniques, such as XRD, AFM, SEM, TEM, AES, XPS, SIMS, PL, and Hall measurements. Our approach is particularly promising for the development nano-size optoelectronic devices of high efficiency based on III-nitride materials.

All figures: Representative images of InGaN NRs and NWs.

Thin / Thick - Films Technology

Our works is focused on the exciting, innovative field of thin / thick films technology and free-standing substrates for the fabrication of microelectronic and optical devices. Among the most important optoelectronic and electronic materials developed in recent years are gallium nitride (GaN) and ternary nitride semiconductor materials containing indium (InxGa1-xN) or aluminum (AlxGa1-xN). In particular, GaN has been perhaps the most widely researched material over the past ten years for its use in production of light emitting diodes operating in blue and ultraviolet wavelengths, and for high temperature, radiation-hardened electronic devices. A distinguishing feature of GaN is that most of its applications require its deposition on foreign substrates. As a consequence of such heteroepitaxy requirements, the quality of the films depends mainly on the properties of the substrate. The modern Metal Organic Vapor Phase Epitaxy (MOVPE) technique is focused on the preparation of high quality materials with specific physical and chemical properties. We are exploring a novel H-MOVPE technique for the deposition of III nitrides that can alternate between MOVPE and Hydride Vapor Phase Epitaxy (HVPE), combining the advantages of both. Fundamental knowledge of the chemistry involved in the growth process (gas phase and surface reactions), nucleation processes, growth rate, morphology, selectivity and impurity levels is the key to realizing a successful MOVPE technique.

Recent Publications

1.	Kryliouk, O., Park, H.J., Won, Y.S., Anderson, T.J., Davydov, A., Levin, I., Kim, J.H. and Freitas, J.A., “Controlled Synthesis of InN Nanorods” Nanotechnology, 18(13) (2007) 135606.
2.	Kang, S.W., Park, H.J., Won, Y.S., Kryliouk, O., Anderson, T., Khokhlov, D. and Burbaev, T., “Prevention of In Droplets Formation by HCl Addition during Metal Organic Vapor phase Epitaxy of InN,” APL, 90 (2007) 161126.
3	Park., H.J., Kryliouk, O., Anderson, T., Khokhlov, D. and Burbaev, T., “Growth of InN Films and Nanorods by H-MOVPE,” Physica E, 37 (2007) 142.
4.	Pearton, S.J., Kang, B.S., Gila, B.P., Norton, D.P., Kryliouk, O., Ren, F., He, Y.W., Chang, C.Y., Wang, G.C., Wang, W.M. and Chen, L.C., “GaN, ZnO, and InN Nanowires and Devices” J. of Nanoscience and Nanotechnology, 8 (2008) 99.
5.	Won., Y.S., Kim, Y.S., Kryliouk, O. and Anderson, T.J., “Growth Mechanism of Catalyst and Template-Free Group III-Nitride Nanorods,” J. Crystal Growth, 310 (2008) 3735.